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    RQA0004PXTL-E

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E

    RQA0004PXTL-E

    Abstract: RQA0004PXDQS
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E RQA0004PXDQS