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    RQA0004PX Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RQA0004PXDQS#H1 Renesas Electronics Corporation N-Channel MOSFET Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RQA0004PXDQS-H1

    MOSFET N-CH 16V 300MA UPAK
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    Renesas Electronics Corporation RQA0004PXTL-E

    (Alt: RQA0004PXTL-E)
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    Avnet Silica RQA0004PXTL-E 28 Weeks 1
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    RQA0004PX Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RQA0004PXDQS Renesas Technology Silicon N-Channel MOS FET Original PDF
    RQA0004PXDQS#H1 Renesas Electronics MOSFET N-CH 16V 300MA UPAK Original PDF
    RQA0004PXTL-E Renesas Technology Silicon N-Channel MOS FET Original PDF

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    RQA0004PXTL-E

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E

    RQA0004PXTL-E

    Abstract: 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012
    Text: RQA0004PXDQS Silicon N-Channel MOS FET REJ03G1489-0100 Rev.1.00 Dec 12, 2006 Features • High Output Power, High Efficiency Pout = +29 dBm, PAE = 68% f = 520 MHz • Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS REJ03G1489-0100 PLZZ0004CA-A RQA0004PXTL-E 155-8-1 905-170 diode MARKING CODE 917 RQA0004PXDQS ZO 103 MA 75 623 zo 107 SC-62 1012

    RQA0004PXTL-E

    Abstract: RQA0004PXDQS
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0500 Rev.5.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0500 PLZZ0004CA-A RQA0004PXTL-E RQA0004PXDQS

    RQA0004PXDQS

    Abstract: RQA0004PXTL-E RQA0004 k 1487 db30a
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0300 Rev.3.00 Sep 09, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0300 PLZZ0004CA-A RQA0004PXDQS RQA0004PXTL-E RQA0004 k 1487 db30a

    k 1487

    Abstract: RQA0004 RQA0004PXTL-E RQA0004PX R07DS0418EJ0201
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0201 Rev.2.01 Jun 27, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


    Original     		PDF RQA0004PXDQS R07DS0418EJ0201 PLZZ0004CA-A k 1487 RQA0004 RQA0004PXTL-E RQA0004PX

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    RQA0004PXDQS

    Abstract: RQA0004PXTL-E
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF