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    Abstract: RQA0004 RQA0004PXTL-E RQA0004PX R07DS0418EJ0201
    Text: Preliminary Datasheet RQA0004PXDQS R07DS0418EJ0201 Rev.2.01 Jun 27, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Efficiency Pout = +29.7 dBm, PAE = 68% f = 520 MHz  Compact package capable of surface mounting Outline RENESAS Package code: PLZZ0004CA-A


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    PDF RQA0004PXDQS R07DS0418EJ0201 PLZZ0004CA-A k 1487 RQA0004 RQA0004PXTL-E RQA0004PX