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Catalog Datasheet	MFG & Type	PDF	Document Tags
RQA0004LXAQS Abstract: No abstract text available Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting	Original	PDF	RQA0004LXAQS R07DS0496EJ0400 PLZZ0004CA-A RQA0004LXAQS

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RQA0004LXAQS

Abstract: No abstract text available
Text: Preliminary Datasheet RQA0004LXAQS R07DS0496EJ0400 Rev.4.00 May 09, 2012 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +29.7 dBm, Linear Gain = 21 dB, PAE = 68% f = 520 MHz  Compact package capable of surface mounting

Original

PDF

RQA0004LXAQS R07DS0496EJ0400 PLZZ0004CA-A RQA0004LXAQS