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    RQA0011

    Abstract: RQA0011DNS Ga FET marking k
    Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0600 Rev.6.00 Mar 19, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)


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    PDF RQA0011DNS WSON0504-2: R07DS0095EJ0600 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011 RQA0011DNS Ga FET marking k