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    NE5550 Price and Stock

    Rochester Electronics LLC NE5550279A-T1A-A

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey NE5550279A-T1A-A Bulk 40,000 77
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    California Eastern Laboratories (CEL) NE5550979A-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550279A-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550234-AZ

    RF MOSFET 7.5V 3MINIMOLD
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    California Eastern Laboratories (CEL) NE5550779A-A

    RF MOSFET LDMOS 7.5V 79A
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    NE5550 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE5550234-AZ Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 3MINIMOLD Original PDF
    NE5550234-EV04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550234-EV09-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550234-T1-AZ Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 3MINIMOLD Original PDF
    NE5550279A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF
    NE5550279A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF
    NE5550779A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF
    NE5550779A-EV04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550779A-EV09-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVAL NPN MED PWR TRANS Original PDF
    NE5550779A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 2.1A 79A-PKG Original PDF
    NE5550979A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG Original PDF
    NE5550979A-EV04-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A Original PDF
    NE5550979A-EV09-A California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD NE5550979A Original PDF
    NE5550979A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 3.0A 79A-PKG Original PDF

    NE5550 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550979A optimized for the performance at 460MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550979A NE5550979A-EV04-A NE5550979A 460MHz. 200mA 28mil 460MHz 200mA

    atc100a2r4b

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550979A o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550979A-EV09-A is an evaluation circuit board for Renesas’ power LDMOS FET, NE5550979A optimized for the performance at 915MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550979A NE5550979A-EV09-A NE5550979A 915MHz. 200mA 28mil 915MHz 200mA

    GRM21BB31

    Abstract: 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 NE5550234 4.7n2
    Text: A Business Partner of Renesas Electronics Corporation. NE5550234 Data Sheet R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-T1 NE5550234-AZ NE5550234-T1-AZ WS260 HS350 GRM21BB31 01K0790-20 GRM1882C1H270JA01 Waka 01K0790-20 MCR03J472 D20-74N7 4.7n2

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    LQW18AN4R7NG00

    Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
    Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0


    Original     		PDF NE5550779A LQW18AN4R7NG00 ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550234-EV04-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550234A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550234 optimized for the performance at 460MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550234-EV04-A NE5550234A-EV04-A NE5550234 460MHz. 28mil 460MHz

    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A

    74n7

    Abstract: R1766T
    Text: Data Sheet NE5550234 R09DS0039EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550234 R09DS0039EJ0300 NE5550234 NE5550234-AZ 74n7 R1766T

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0300 NE5550779A NE5550779A-A R1766

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550779A-EV04-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV04-A is an evaluation circuit board for Renesas’ LDMOS power FET,


    Original     		PDF NE5550779A-EV04-A NE5550779A-EV04-A NE5550779A 460MHz. 140mA 28mil 460MHz 140mA

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550779A-EV09-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550779A-EV09-A is an evaluation circuit board for Renesas’ LDMOS power FET,


    Original     		PDF NE5550779A-EV09-A NE5550779A-EV09-A NE5550779A 915MHz. 100mA 28mil 915MHz 100mA

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A

    74n7

    Abstract: L1-L10 D2074 ne5550
    Text: Data Sheet NE5550234 R09DS0039EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power MOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550234 R09DS0039EJ0200 NE5550234 NE5550234-AZ 74n7 L1-L10 D2074 ne5550

    ATC100A100JW

    Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150

    ne5550

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550779A R09DS0040EJ0300 NE555077 NE5550779A ne5550

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766

    Untitled

    Abstract: No abstract text available
    Text: Evaluation Board Document NE5550234-EV09-A Evaluation Board o Circuit Description o Typical Performance Data o Circuit Schematic and Assembly Drawing Circuit Description The NE5550234-EV09-A is an evaluation circuit board for Renesas’ LDMOS power FET, NE5550234 optimized for the performance at 915MHz. The circuit board is RoHS compliant.


    Original     		PDF NE5550234-EV09-A NE5550234-EV09-A NE5550234 915MHz. 28mil 915MHz

    NE5550779A-T1

    Abstract: sma 906
    Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550779A R09DS0040EJ0200 NE5550779A NE5550779A-A NE5550779A-T1 sma 906

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404