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    ATC100A100JW

    Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150