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ATC100A3R9BW Price and Stock

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American Technical Ceramics Corp ATC100A3R9BW150XT CAP,CERAMIC,3.9PF,150VDC,.1-PF TOL,.1+PF TOL,90PPM-TC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A3R9BW150XT		121			1 $3.15 10 $3.15 100 $2.1 1000 $1.9425 10000 $1.9425	Buy Now
	ATC100A3R9BW150XT		121			1 $3.15 10 $3.15 100 $2.1 1000 $1.9425 10000 $1.9425	Buy Now
American Technical Ceramics Corp ATC100A3R9BW150X CAPACITOR, CERAMIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	ATC100A3R9BW150X		40			1 $2.744 10 $2.058 100 $1.715 1000 $1.715 10000 $1.715	Buy Now
	ATC100A3R9BW150X		40			1 $2.744 10 $2.058 100 $1.715 1000 $1.715 10000 $1.715	Buy Now
Kyocera AVX Components 100A3R9BW150XT Silicon RF Capacitors / Thin Film 150volts 3.9pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A3R9BW150XT	Reel			500	1 - 10 - 100 - 1000 $3.56 10000 $3.56	Buy Now
Kyocera AVX Components 100A3R9BW150XTV Silicon RF Capacitors / Thin Film 150V 3.9pF Tol 0.1pF Las Mkg Vertical
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	100A3R9BW150XTV	Reel			500	1 - 10 - 100 - 1000 $2.43 10000 $2.43	Buy Now

ATC100A3R9BW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A	PDF
Untitled Abstract: No abstract text available Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)	Original	NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A	PDF
ATC100A100JW Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150 Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm	Original	NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150	PDF
diode R17 SMA Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs	Original	MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB	PDF