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    ATC100A3R3BW Search Results

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    ATC100A3R3BW Price and Stock

    American Technical Ceramics Corp ATC100A3R3BW150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.0000033 UF, SURFACE MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A3R3BW150XT 1,138
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.8625
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    American Technical Ceramics Corp ATC100A3R3BW150XB

    Capacitor, Ceramic, 3.3pf, 150V, .1+pf
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A3R3BW150XB 28
    • 1 $2.125
    • 10 $1.955
    • 100 $1.7
    • 1000 $1.7
    • 10000 $1.7
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    American Technical Ceramics Corp ATC100A3R3BW150X

    CAPACITOR, CERAMIC, 150V, 90PPM/CEL TC, 3.3PF, 0606
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A3R3BW150X 3
    • 1 $6.9663
    • 10 $5.8053
    • 100 $5.8053
    • 1000 $5.8053
    • 10000 $5.8053
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    Kyocera AVX Components 100A3R3BW150XT

    Silicon RF Capacitors / Thin Film 150volts 3.3pF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100A3R3BW150XT Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.22
    • 10000 $1.91
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    ATC100A3R3BW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766

    diode R17 SMA

    Abstract: C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB
    Text: 19-2027; Rev 1; 3/04 MAX2291 Evaluation Kit The MAX2291 evaluation kit EV kit simplifies evaluation of the MAX2291 power amplifier (PA). It enables testing of the device’s RF performance and requires no additional support circuitry. The EV kit’s signal inputs


    Original     		PDF MAX2291 MAX2291 diode R17 SMA C91 diode GRM36X7R471K50 HP 437B a5 gnd 22pf capacitor Maxim MAX2291 GRM36X7R103K16 C92 diode ATC100A1R8BW150XB