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    Kyocera AVX Components 100A101JT150XTV

    Silicon RF Capacitors / Thin Film 150V 100pF Tol 5% Las Mkg Vertical
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    TTI 100A101JT150XTV Reel 1,000 500
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    Kyocera AVX Components 100A101JT150XT

    Silicon RF Capacitors / Thin Film 150volts 100pF 5%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 100A101JT150XT Reel 500
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    ATC100A101JT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35020A Rev. 1, 12/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1

    MRFG35003N6AT1

    Abstract: IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 IrL 1540 N FET 4900 A113 A114 A115 AN1955 C101 JESD22 n channel fet k 1118

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 LIFETIME BUY Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300-3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020AR1 MRFG35020A

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1

    GRM55DR61H106KA88B

    Abstract: AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1 GRM55DR61H106KA88B AN1955 P channel irl MRFG35020A A114 A115 C101 JESD22 MRFG35020AR1 ATC100A101JT150XT

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466

    A1156 TRANSISTOR

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005AN MRFG35005ANT1 A1156 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766

    FET 4900

    Abstract: MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005AN MRFG35005ANT1 FET 4900 MRFG35005ANT1 application note A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1

    ATC100A101JT150XT

    Abstract: atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35020A Rev. 0, 1/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35020AR1 Designed for WiMAX and WLL base station applications that have a 200 MHz BW requirement in the 2300- 3800 MHz frequency range. Suitable for TDMA and


    Original     		PDF MRFG35020A MRFG35020AR1 ATC100A101JT150XT atc100a100jt150xt ATC100A101 A114 A115 AN1955 C101 JESD22 MRFG35020A MRFG35020AR1

    IrL 1540 N

    Abstract: atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005AN MRFG35005ANT1 IrL 1540 N atc 17-33 A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1 ATC100a101

    MRFG35003N6AT1

    Abstract: ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 1, 11/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35003N6A MRFG35003N6AT1 MRFG35003N6AT1 ATC100A101 A113 A114 A115 AN1955 C101 JESD22 0841 K 1358 fet transistor

    atc 17-33

    Abstract: FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005AN Rev. 0, 7/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005AN MRFG35005ANT1 atc 17-33 FET 4900 CRCW12061000FKTA A113 A114 A115 AN1955 C101 JESD22 MRFG35005ANT1

    ATC100A101

    Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 ATC100A101 murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		PDF NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766