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    NE5550279A Search Results

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    NE5550279A Price and Stock

    Rochester Electronics LLC NE5550279A-T1A-A

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey NE5550279A-T1A-A Bulk 40,000 77
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    California Eastern Laboratories (CEL) NE5550279A-A

    RF MOSFET LDMOS 7.5V 79A
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    California Eastern Laboratories (CEL) NE5550279A-T1-A

    RF MOSFET LDMOS 7.5V 79A
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    Renesas Electronics Corporation NE5550279A-T1A-A

    - Tape and Reel (Alt: NE5550279A-T1A-A)
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    Avnet Americas NE5550279A-T1A-A Reel 4 Weeks 93
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    Rochester Electronics NE5550279A-T1A-A 40,000 1
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    NE5550279A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE5550279A-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF
    NE5550279A-T1-A Renesas Technology RF FETs, Discrete Semiconductor Products, IC FET LDMOS 30V 0.6A 79A-PKG Original PDF

    NE5550279A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0200 NE55502ine WS260 HS350 R09DS0033EJ0200 NE5550279A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)


    Original     		PDF NE5550279A R09DS0033EJ0200 NE5550279A NE5550279A-A

    ATC100A100JW

    Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm


    Original     		PDF NE5550279A R09DS0033EJ0100 NE5550279A NE5550279A-A WS260 HS350 ATC100A100JW GRM188B31C105KA92 ATC100A3R9BW atc100a150

    SMD M05 sot23

    Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404
    Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly


    Original     		PDF 2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404