LQW18AN4R7NG00
Abstract: ATC100A6R8BW ATC100A2R7JW GRM188B31C105KA92 ATC100A120BW MCR03J103 GQM1882C1H150JB01
Text: A NE5550779A RECOMMENDED OPERATING RANGE TA = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Input Power Symbol VDS VGS IDS Pin Test Conditions f = 460 MHz, VDS = 7.5 V MIN. – 1.65 – – TYP. 7.5 2.20 1.4 25 MAX. 9.0
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NE5550779A
LQW18AN4R7NG00
ATC100A6R8BW
ATC100A2R7JW
GRM188B31C105KA92
ATC100A120BW
MCR03J103
GQM1882C1H150JB01
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Untitled
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. NE5550279A Data Sheet R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0200
NE55502ine
WS260
HS350
R09DS0033EJ0200
NE5550279A
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R1766
Abstract: No abstract text available
Text: Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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NE5550779A
R09DS0040EJ0300
NE5550779A
NE5550779A-A
R1766
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Untitled
Abstract: No abstract text available
Text: Data Sheet NE5550279A R09DS0033EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm)
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NE5550279A
R09DS0033EJ0200
NE5550279A
NE5550279A-A
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ATC100A100JW
Abstract: GRM188B31C105KA92 ATC100A3R9BW atc100a150
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550279A R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 33.0 dBm TYP. VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm
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NE5550279A
R09DS0033EJ0100
NE5550279A
NE5550279A-A
WS260
HS350
ATC100A100JW
GRM188B31C105KA92
ATC100A3R9BW
atc100a150
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ne5550
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550779A R09DS0040EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm
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NE5550779A
R09DS0040EJ0300
NE555077
NE5550779A
ne5550
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NE5550779A-T1
Abstract: sma 906
Text: Data Sheet NE5550779A R09DS0040EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 38.5 dBm TYP. VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm)
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Original
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NE5550779A
R09DS0040EJ0200
NE5550779A
NE5550779A-A
NE5550779A-T1
sma 906
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PDF
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