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    ATC100A2R4B Price and Stock

    American Technical Ceramics Corp ATC100A2R4BP150X

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ATC100A2R4BP150X 1,574
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    Quest Components ATC100A2R4BP150X 1,259
    • 1 $3.108
    • 10 $3.108
    • 100 $3.108
    • 1000 $1.1655
    • 10000 $1.1655
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    ATC100A2R4BP150X 6
    • 1 $5.9487
    • 10 $4.3624
    • 100 $4.3624
    • 1000 $4.3624
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    American Technical Ceramics Corp ATC100A2R4BW150XT

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    Bristol Electronics ATC100A2R4BW150XT 1,025
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    Quest Components ATC100A2R4BW150XT 8,490
    • 1 $2.632
    • 10 $2.632
    • 100 $2.632
    • 1000 $0.987
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    ATC100A2R4BW150XT 820
    • 1 $2.632
    • 10 $2.632
    • 100 $2.632
    • 1000 $1.0857
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    ATC100A2R4BW150XT 48
    • 1 $2.25
    • 10 $2.25
    • 100 $1.35
    • 1000 $1.35
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    American Technical Ceramics Corp ATC100A2R4BW150X

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ATC100A2R4BW150X 234
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    Quest Components ATC100A2R4BW150X 3,200
    • 1 $2.632
    • 10 $2.632
    • 100 $2.632
    • 1000 $0.987
    • 10000 $0.987
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    ATC100A2R4BW150X 33
    • 1 $3.06
    • 10 $2.04
    • 100 $1.53
    • 1000 $1.53
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    American Technical Ceramics Corp AOL12BG2R4ABUS

    CERAMIC CAPACITOR, CERAMIC, 50V, 20%+-TOL, BG, -20/+90PPM/CEL TC, 0.0000024UF, 0606 (Also Known As: ATC100A2R4BP50X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components AOL12BG2R4ABUS 198
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    American Technical Ceramics Corp ATC100A2R4BCA150X

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A2R4BCA150X 24
    • 1 $1.875
    • 10 $1.725
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
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    Find more ATC100A2R4B price and stock on Findchips.com

    ATC100A2R4B Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    atc100a2r4b

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0100 Rev.1.00 Nov 25, 2011 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0100 IEC61000-4-2, NE5550979A NE5550979A-AZ atc100a2r4b PDF

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0200 IEC61000-4-2, NE5550979A NE5550979A-A PDF

    TL817

    Abstract: TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL934 TL804 TL802 TL902 TL941 TL928 tl945 TL84 TL805 PDF

    ATC100A101JT

    Abstract: Waka 01K0790-20 NE5550979A ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775
    Text: A Business Partner of Renesas Electronics Corporation. NE5550979A Data Sheet R09DS0031EJ0200 Rev.2.00 Jul 04, 2012 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		NE5550979A R09DS0031EJ0200 IEC61000-4-2, HS350 NE5550979A ATC100A101JT Waka 01K0790-20 ATC100A3R3BW GRM1882C1H101JA01 GRM31CR72A105KA01B R-4775 PDF

    R1766

    Abstract: No abstract text available
    Text: Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm High power added efficiency : ηadd = 66% TYP. (VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm)


    Original     		NE5550979A R09DS0031EJ0300 IEC61000-4-2, NE5550979A NE5550979A-A R1766 PDF

    C909

    Abstract: tL920 TL823 TL817 PTFB241402F
    Text: PTFB241402F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular ampliier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 C909 tL920 TL823 TL817 PDF

    Panasonic R1766

    Abstract: No abstract text available
    Text: A Business Partner of Renesas Electronics Corporation. Data Sheet NE5550979A R09DS0031EJ0300 Rev.3.00 Mar 12, 2013 Silicon Power LDMOS FET FEATURES • • • • • High Output Power : Pout = 39.5 dBm TYP. VDS = 7.5 V, IDset = 200 mA, f = 460 MHz, Pin = 25 dBm


    Original     		NE5550979A R09DS0031EJ0300 IEC61000-4-2, Panasonic R1766 PDF

    TL817

    Abstract: TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945
    Text: PTFB241402F Customer-Specific Spec — Not for General Release High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz Description The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package. It is designed for cellular amplifier applications in


    Original     		PTFB241402F PTFB241402F H-37248-4 TL817 TL801 TL804 TL802 c901 transistor transistor c904 TL944 TL902 transistor c905 tl945 PDF