IXAN0063
Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS
Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.
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IXAN0063
2001Indonesia
IXAN0063
IGBT THEORY AND APPLICATIONS
MOSFET IGBT THEORY AND APPLICATIONS
schematic diagram UPS IGBT
Mohan power electronics converters applications a
transistor igbt
BJT safe operating area
IGBT PNP
input output bjt npn transistor
SCHEMATIC servo dc IGBTS
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2n60p
Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond
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IXFR48N60P
18N60P
30N60P
22N60P
36N60P
26N60P
48N60P
PLUS220
IXTV22N50PS.
2n60p
gsm based speed control of single phase induction motor
thyristor family
48N60
600v 20 amp mosfet
14n60
300V HiPerFET power MOSFET single die MOSFET
Wireless A.C motor speed controlling system
IXYS SCR MODULE Gate Drive
15N60P
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D fl D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20090209d
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DSA003710
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS
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30N60C5
O-247
20070625a
DSA003710
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20080310b
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20080523c
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Untitled
Abstract: No abstract text available
Text: IXKP 30N60C5M ID25 = 10 A VDSS = 600 V RDS on max = 0.125 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
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30N60C5M
O-220
20080310a
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30N60C2
Abstract: 728B1 123B1
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20
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30N60C2
30N60C2
IC110
O-268
O-247
065B1
728B1
123B1
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IGBT GS
Abstract: No abstract text available
Text: IXKH 30N60C5 CoolMOS 1 Power MOSFET ID25 = 30 A VDSS = 600 V RDS on) max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings
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30N60C5
O-247
20090209d
IGBT GS
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD D G G D S S D(TAB) Features MOSFET Conditions VDSS
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30N60C5
O-247
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Untitled
Abstract: No abstract text available
Text: IXKH 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-247 AD G G D q D(TAB) S S Features MOSFET Conditions VDSS
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30N60C5
O-247
20070625a
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MOSFET IXYS TO-220
Abstract: No abstract text available
Text: IXKH 30N60C5 IXKP 30N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 30 A VDSS = 600 V RDS on max = 0.125 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP)
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30N60C5
O-247
O-220
MOSFET IXYS TO-220
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BU1 VCES IXGT 30N60BU1 IC25 VCE sat tfi = 600 V = 60 A = 1.8 V = 100 ns TO-268 (IXGT) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous
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30N60BU1
O-268
IC110
30N60BU1
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30N60BD1
Abstract: ICP-F50
Text: HiPerFASTTM IGBT with Diode IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C
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30N60BD1
O-268
O-247
ICP-F50
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30N60P
Abstract: 30N60 IXTQ30N60P PLUS220SMD equivalent for 30n60p
Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 30 A RDS on ≤ 240 m Ω IXTH 30N60P IXTQ 30N60P IXTT 30N60P IXTV 30N60P IXTV 30N60PS N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ
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30N60P
30N60PS
O-268
PLUS220
30N60P
30N60
IXTQ30N60P
PLUS220SMD
equivalent for 30n60p
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30n60
Abstract: 30N60B2
Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2
IC110
O-220
30n60
30N60B2
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Untitled
Abstract: No abstract text available
Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
IC110
O-247
728B1
123B1
728B1
065B1
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30N60B2D1
Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A
Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ
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30N60B2D1
IC110
O-247
728B1
123B1
728B1
065B1
IXGH30N60B2D1
30N60B2D
30n60b
30N60B2
DSEP 12A
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TO-247 Package y
Abstract: No abstract text available
Text: □ IXYS Preliminary Data Sheet HiPerFAST IGBT with Diode IXGH30N60BU1 IXGH30N60BU1S V CES 600 V 60 A 1.8 V 130 ns ^C25 V CE sat Combi Pack TO-247 SMD (30N60BU1S) m Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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IXGH30N60BU1
IXGH30N60BU1S
O-247
TO-247 Package y
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30n60b
Abstract: B2045
Text: □ IXYS v CES High Speed IGBT t, 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns IXSH/IXST 30N60B IXSH/IXST 30N60C ^CES Short Circuit SOA Capability Preliminary Data Sheet Maximum Ratings Symbol Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60B
30N60C
30n60b
B2045
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Untitled
Abstract: No abstract text available
Text: □ IXYS Low V CE sat „ , „ IGBT High Speed IGBT IXSH/IXSM IXSH/IXSM 30N60 30N60A v CES ^C25 V C E (sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i
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30N60
30N60A
O-247
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Untitled
Abstract: No abstract text available
Text: DIXYS Hi PerFAST IGBT with Diode VCES IXGH 30N60BU1 ^C25 vCE sat tfi = 600 V = 60 A = 1.8 V = 130 ns 9C Preliminary data g nr i j Symbol Test Conditions V CES V * CGR T j = 25° C to 150° C 600 V T,J = 25° C to 150°C; Rrc lit = 1 MSÎ 600 V V * GES
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30N60BU1
O-247
O-247
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Untitled
Abstract: No abstract text available
Text: I Z II X Y S HiPerFAST IGBT with Diode V.CES IXGH 30N60BD1 IXGT 30N60BD1 600 60 1.8 C25 CE sat V A V 100 ns tfi(typ) Preliminary data sheet Maximum Ratings Symbol TestC onditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i
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30N60BD1
O-268
O-247
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Untitled
Abstract: No abstract text available
Text: DIXYS IGBT with Diode L0W IXSH 30N60AU1 VCES I V c E s„. C25 v CE(sat) High Speed Combi Packs 600 V 50 A 3.0 V ?c S h o r t C ir c u it S O A C a p a b ilit y G OE Symbol Test Conditions VCES Tj =25°C to150°C 600 V VcOR Tj = 25° C to 150° C; RGE= 1 Mi2
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30N60AU1
to150
O-247AD
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