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    IC110 Search Results

    IC110 Result Highlights (5)

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    TLV320AIC1106PW Texas Instruments PCM Codec With Microphone Amps & Speaker Driver 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC1106PWG4 Texas Instruments PCM Codec With Microphone Amps & Speaker Driver 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC1103PBS Texas Instruments Programmable PCM Codec With Microphone Amps & Speaker Driver 32-TQFP -40 to 85 Visit Texas Instruments Buy
    TLV320AIC1107PWR Texas Instruments PCM CODEC (A-Law) with Microphone & 8-ohm Speaker Amplifiers 20-TSSOP -40 to 85 Visit Texas Instruments Buy
    AMIC110BZCZA Texas Instruments Sitara Processor: Arm Cortex-A8, 10+ Ethernet protocols 324-NFBGA -40 to 105 Visit Texas Instruments Buy
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    Texas Instruments TLV320AIC1106PWR

    IC CODEC PCM 13 BIT 20TSSOP
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    DigiKey TLV320AIC1106PWR Digi-Reel 2,005 1
    • 1 $5.56
    • 10 $4.249
    • 100 $3.5626
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    TLV320AIC1106PWR Cut Tape 2,005 1
    • 1 $5.56
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    TLV320AIC1106PWR Reel 2,000 2,000
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    Mouser Electronics TLV320AIC1106PWR 2,025
    • 1 $5.56
    • 10 $4.25
    • 100 $3.57
    • 1000 $3.21
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    Rochester Electronics TLV320AIC1106PWR 35 1
    • 1 $3.19
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    Ameya Holding Limited TLV320AIC1106PWR 148,005
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    ComSIT USA TLV320AIC1106PWR 245
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    Raltron Electronics Corporation RMIC-110-10-6022-NS1

    SMD Microphone
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    DigiKey RMIC-110-10-6022-NS1 Tray 1,195 1
    • 1 $0.94
    • 10 $0.768
    • 100 $0.638
    • 1000 $0.51012
    • 10000 $0.4625
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    Raltron Electronics Corporation RMIC-110-5-3015-NS1

    Omnidirectional Microphone
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    DigiKey RMIC-110-5-3015-NS1 Tray 971 1
    • 1 $1.33
    • 10 $1.083
    • 100 $0.89975
    • 1000 $0.71976
    • 10000 $0.675
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    Raltron Electronics Corporation RMIC-110-5-6027-NS1

    Unidirectional Microphone
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    DigiKey RMIC-110-5-6027-NS1 Tray 966 1
    • 1 $1.15
    • 10 $0.936
    • 100 $0.77763
    • 1000 $0.62197
    • 10000 $0.575
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    Raltron Electronics Corporation RMIC-110-5-4015-NS2

    Noise Cancelling Microphone
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    DigiKey RMIC-110-5-4015-NS2 Tray 960 1
    • 1 $1.22
    • 10 $0.991
    • 100 $0.82363
    • 1000 $0.6588
    • 10000 $0.6125
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    IC110 Datasheets Context Search

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    IXGH32N60C

    Abstract: 32N60C IXGH32N60
    Text: HiPerFASTTM IGBT LightspeedTM Series IXGH 32N60C IXGT 32N60C Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C


    Original     		32N60C IC110 O-268 O-247 IXGH32N60C 32N60C IXGH32N60 PDF

    IXGH30N60B

    Abstract: IXGT30N60B
    Text: HiPerFASTTM IGBT IXGH30N60B IXGT30N60B Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 60 A IC110 TC = 110°C 30 A ICM TC = 25°C, 1 ms


    Original     		IXGH30N60B IXGT30N60B IC110 O-247 O-268 IXGH30N60B IXGT30N60B PDF

    IXXH100N60B3

    Abstract: 100n60
    Text: Advance Technical Information XPTTM 600V GenX3TM IXXH100N60B3 VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXH100N60B3 IC110 150ns O-247 100N60B3 0-10-A IXXH100N60B3 100n60 PDF

    IXGH72N60C3

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBT IXGH72N60C3 VCES IC110 VCE sat tfi (typ) High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES Continuous ±20 V VGEM Transient


    Original     		IXGH72N60C3 IC110 40-100kHz 72N60C3 11-25-09-C IXGH72N60C3 PDF

    IXBL64N250

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBL64N250 IC110 64N250 5-10-A IXBL64N250 PDF

    IXGK55N120A3H1

    Abstract: IXGX55N120A3H1 IXGX55N120 PLUS247 IC110
    Text: Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 GenX3TM 1200V IGBTs w/ Diode VCES = 1200V IC110 = 55A VCE sat ≤ 2.3V Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXGK55N120A3H1 IXGX55N120A3H1 IC110 O-264 338B2 IXGK55N120A3H1 IXGX55N120A3H1 IXGX55N120 PLUS247 IC110 PDF

    8-8NS

    Abstract: No abstract text available
    Text: Advance Technical Information IXGH30N60B4 High-Gain IGBT VCES IC110 VCE sat tfi(typ) Medium-Speed PT Trench IGBT = = ≤ = 600V 30A 1.7V 88ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Maximum Ratings


    Original     		IXGH30N60B4 IC110 O-247 338B2 8-8NS PDF

    IXGR50N160H1

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage IGBT with Diode IXGR50N160H1 VCES = 1600V IC110 = 36A VCE sat ≤ 2.30V ( Electrically Isolated Tab) ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGR50N160H1 IC110 ISOPLUS247TM 338B2 IXGR50N160H1 PDF

    IXGN200N60B3

    Abstract: 9V DC INPUT and gate ic 200N60B3 IGBT 100V 100A igbt 100a 150v SOT227B 123B16
    Text: IXGN200N60B3 GenX3TM 600V IGBT VCES = 600V IC110 = 200A VCE sat ≤ 1.50V Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 Ec Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXGN200N60B3 IC110 5-40kHz OT-227B, E153432 200N60B3 8-08-A IXGN200N60B3 9V DC INPUT and gate ic IGBT 100V 100A igbt 100a 150v SOT227B 123B16 PDF

    IXBX64N250

    Abstract: IC100 IXBK64N250 PLUS247
    Text: High Voltage, High Gain BiMOSFETTM IXBK64N250 IXBX64N250 VCES IC110 = 2500V = 64A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor TO-264 (IXBK) G Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247 PDF

    IXYH82N120C3

    Abstract: DS100335
    Text: Advance Technical Information IXYH82N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 82A 3.2V 93ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH82N120C3 IC110 O-247 062in. 82N120C3 IXYH82N120C3 DS100335 PDF

    8n90c

    Abstract: 8n90 IXYP8N90C3 IGBTS
    Text: Advance Technical Information IXYY8N90C3 IXYP8N90C3 900V XPTTM IGBTs GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 8A 2.5V 130ns TO-252 (IXYY) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYY8N90C3 IXYP8N90C3 IC110 130ns O-252 062in. O-220) O-252 O-220 8n90c 8n90 IXYP8N90C3 IGBTS PDF

    IXYH50N120C3

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH50N120C3 1200V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 50A 3.0V 57ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXYH50N120C3 IC110 O-247 062in. 50N120C3 IXYH50N120C3 PDF

    IXGJ50N60C4D1

    Abstract: G50N60
    Text: Preliminary Technical Information High-Gain IGBT w/ Diode IXGJ50N60C4D1 VCES = 600V IC110 = 21A VCE sat ≤ 2.50V (Electrically Isolated Tab) High-Speed PT Trench IGBT ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C


    Original     		IXGJ50N60C4D1 IC110 O-247TM E153432 IC110 IF110 50N60C4 0-06-11-A IXGJ50N60C4D1 G50N60 PDF

    40N90C3D1

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH40N90C3 900V XPTTM IGBT GenX3TM VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 900V 40A 2.5V 110ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXYH40N90C3 IC110 110ns O-247 062in. 40N90C3D1 PDF

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D PDF

    Untitled

    Abstract: No abstract text available
    Text: IXXK110N65B4H1 IXXX110N65B4H1 XPTTM 650V GenX4TM w/ Sonic Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 650V 110A 2.1V 85ns TO-264 (IXXK) Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		IXXK110N65B4H1 IXXX110N65B4H1 IC110 10-30kHz O-264 IF110 110N65B4H1 02-04-13-B PDF

    IXXH50N60B3D1

    Abstract: No abstract text available
    Text: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXXH50N60B3D1 IC110 5-30kHz 135ns O-247 IF110 IXXH50N60B3D1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V IGBT GenX3TM IXYH100N65C3 VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 100A 2.30V 50ns TO-247 Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		IXYH100N65C3 IC110 20-60kHz O-247 100N65C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGN120N60A3 IXGN120N60A3D1 VCES = 600V IC110 = 120A VCE sat ≤ 1.35V Ultra-low Vsat PT IGBTs for up to 5kHz switching D1 E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXGN120N60A3 IXGN120N60A3D1 IC110 OT-227B, E153432 IF110 2x61-06A PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 30A 2.7V 37ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYH30N65C3 IC110 20-60kHz O-247 30N65C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 650V 20A 2.5V 28ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYH20N65C3 IC110 O-247 20N65C3 PDF

    Untitled

    Abstract: No abstract text available
    Text: XPTTM 650V GenX4TM w/ Sonic Diode IXXN110N65B4H1 Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 650V 110A 2.1V 85ns E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXN110N65B4H1 10-30kHz IC110 OT-227B, E153432 IF110 110N65B4H1 02-04-13-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXYH30N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 30A 2.7V 24ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXYH30N65C3 IC110 20-60kHz O-247 30N65C3 4D-R47) PDF