30N60B2 Search Results

30N60B2 Price and Stock

Filter by Manufacturer


IXYS Corporation IXGP30N60B2 IGBT 600V 70A 190W TO220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGP30N60B2	Tube			50	1 - 10 - 100 $1.9768 1000 $1.9768 10000 $1.9768	Buy Now
IXYS Corporation IXGH30N60B2 IGBT 600V 70A 190W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	IXGH30N60B2		30			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGT30N60B2 IGBT PT 600V 70A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGT30N60B2	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXST30N60B2D1 IGBT PT 600V 48A TO268AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXST30N60B2D1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSH30N60B2D1 IGBT 600V 48A 250W TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXSH30N60B2D1	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more 30N60B2 price and stock on Findchips.com

30N60B2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
30n60 Abstract: 30N60B2 Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2 IC110 O-220 30n60 30N60B2
30N60B2 Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2 IC110 O-268 30N60B2
Untitled Abstract: No abstract text available Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110
30N60B2D1 Abstract: ixgh30n60b2d1 Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110 O-247 O-268 728B1 123B1 065B1 ixgh30n60b2d1
4013V Abstract: Siemens DIODE E 1220 30N60B2D1 Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 30N60B2D1 IC110 O-247 O-268 4013V Siemens DIODE E 1220
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT IXGP 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous	Original	PDF	30N60B2 IC110 O-220
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT IXGH 30N60B2 IXGT 30N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	PDF	30N60B2 IC110 O-268 O-247
Untitled Abstract: No abstract text available Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1
30N60B2D1 Abstract: IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A Text: Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions IXGH 30N60B2D1 VCES IXGT 30N60B2D1 IC25 VCE sat tfi typ Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110 O-247 728B1 123B1 728B1 065B1 IXGH30N60B2D1 30N60B2D 30n60b 30N60B2 DSEP 12A
Siemens DIODE E 1220 Abstract: 30N60B2D1 30N60B ixst30n60b2d1 Text: High Speed IGBT with Diode IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE sat = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	PDF	30N60B2D1 IC110 Siemens DIODE E 1220 30N60B2D1 30N60B ixst30n60b2d1
7N60B equivalent Abstract: 60N60B2-7Y 7N60C-2X 7N60B-2X 10n60b ixgd 28N12 60N60C2-7Y 20N120 16N60C2 Text: Chip-Shortform2004.pmd Insulated Gate Bipolar Transistors G-Series Type VCES VCE sat @ IC Chip type Chip size dimensions 6 TJM = 150°C V V A mm mils Source bond wire Equivalent device recommended data sheet 26.10.2004, 12:44 High Gain High Gain High Gain	Original	PDF	7N60B-2X 7N60C-2X 16N60B2-3X 16N60C2-3X 30N60B2-4X 30N60C2-4X 40N60B2-5Y 40N60C2-5Y 60N60B2-7Y 60N60C2-7Y 7N60B equivalent 10n60b ixgd 28N12 20N120 16N60C2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
IXAN0063 Abstract: IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS Text: Insulated Gate Bipolar Transistor IGBT Basics Abdus Sattar, IXYS Corporation IXAN0063 1 This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs.	Original	PDF	IXAN0063 2001Indonesia IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT Mohan power electronics converters applications a transistor igbt BJT safe operating area IGBT PNP input output bjt npn transistor SCHEMATIC servo dc IGBTS