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    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


    OCR Scan     		PDF NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889

    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


    OCR Scan     		PDF NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800

    2SC2338

    Abstract: NE567 NE56787 NE56708 NE56700 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567
    Text: NEC/ CALIFORNIA 15E D bM27M14 0 0 0 14 05 b NE56700 NE56708 NE56787 NPN SILICON HIGH FREQUENCY TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES • HIGH GAIN BANDWIDTH PRODUCT PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 25 VCEO Collector to Emitter Voltage


    OCR Scan     		PDF b427414 T-31-21 NE56700 NE56708 NE56787 NE567 2SC2338 NE56787 S21E T-31-21 transistor 7350 IC CHIP 5270 IC NE567

    Untitled

    Abstract: No abstract text available
    Text: NEC SUPER LOW NOISE HJ FET FEATURES NE329S01 & a s s o c ia t e d GAIN vs. FREQUENCY n o is e f ig u r e -• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz • HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF NE329S01 NE329S01 Rn/50 NE329S01-T1 NE329S01-T1B

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES NE32984D NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I ds = 10 mA • VERY LOW NOISE FIGURE: 0.40 dB Typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 21 12.5 dB Typical at 12 GHz 00 •a • Lg < 0.20 urn, W g = 200 im


    OCR Scan     		PDF NE32984D NE32984D figu167 IS12I IS11I2 NE32984D-S NE32984D-T1

    Untitled

    Abstract: No abstract text available
    Text: C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY V « . INPUT POWER FEATURES HIGH NEZ7177-8D NEZ7177-8DD NEZ7177-4D NEZ7177-4DD P out 9W 39.5 dBm Typ PidB for NEZ7177-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ7177-4D/4DD HIGH EFFICIENCY 2 er E m 33% TJADD for 4.5W Device


    OCR Scan     		PDF NEZ7177-8D NEZ7177-8DD NEZ7177-4D NEZ7177-4DD NEZ7177-8D/8DD NEZ7177-4D/4DD

    transistor NEC D 586

    Abstract: NEC D 586
    Text: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000, NE29200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 and NE29200 are Hetero Junction FET that utilizes the hetero junction to create high mobility


    OCR Scan     		PDF NE321000, NE29200 NE321000 NE29200 NE321000 P14270E transistor NEC D 586 NEC D 586

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm


    OCR Scan     		PDF NE25118 NE25118 OT-343 IS11I2 IS12I 1S12S21I OT-343) NE25118-T1

    OCI 531

    Abstract: No abstract text available
    Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


    OCR Scan     		PDF NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <


    OCR Scan     		PDF NE76084 E76084 IS12S21I NE76084S NE76084-T1

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10m A FEATURES • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: Ga = 11.0 dB typical a tf = 12 GHz


    OCR Scan     		PDF NE24200 NE24200 24-Hour

    k 1117 3k

    Abstract: 317MAG
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: PACKAGE OUTLINE 18 Gs = 5.5 dB T Y P a t f = 12 GHz LOW PHASE NOISE: 2.1 ± 0.2 -110 dBc/Hz TYP at 100 KHz off set at f = 11 GHz


    OCR Scan     		PDF NE72118 OT-343) E72118 1e-14 4e-12 1e-10 65e-12 046e-12 36e-10 k 1117 3k 317MAG

    str 0765

    Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
    Text: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING


    OCR Scan     		PDF NEZ1414 NEZ1414-4E redu50 str 0765 gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750

    ne46134

    Abstract: NE46134 equivalent ne461
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz


    OCR Scan     		PDF NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent

    m28 transistor

    Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
    Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z


    OCR Scan     		PDF b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E

    TA4001F

    Abstract: No abstract text available
    Text: TO SHIBA TA4001F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4001F VHF UHF WIDE BAND AMPLIFIER FEATURES • Band Width 2.4GHz Typ. (3dB down) • High Gain : |S2 1 |2= 12.5dB (Typ.) (f = 500MHz) • 500 Input and Output Impedance • Small Package


    OCR Scan     		PDF TA4001F 500MHz) TA4001F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C BAND SUPER LOW NOISE HJ FET NE434S01 FEATURES_ MAXIMUM AV A ILA B LE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.35 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 15.5 dB TYP at 4 GHz m td


    OCR Scan     		PDF NE434S01 NE434S01 NE434S01-T1 NE434S01-T1B

    BA 5982

    Abstract: 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE856 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: fT = 7 GHz • LOW NOISE FIGURE: 1.1 dB at 1 GHz • HIGH COLLECTOR CURRENT: 100 mA • HIGH RELIABILITY METALLIZATION • LOW COST 35 MICRO-X


    OCR Scan     		PDF NE856 av3000 NE85639R-T1 BA 5982 143r 0709s nec d 882 p transistor transistor NEC D 882 p 7m 0880 IC NEC NE85635 ceramic micro-X package 015e1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES_ ABSOLUTE MAXIMUM RATINGS1 Tc = 25 °C unless otherwise noted • HIGH OUTPUT POWER: 1 W SYMBOLS • HIGH LINEAR GAIN: 9.0 dB PARAMETERS UNITS RATINGS


    OCR Scan     		PDF NE8500100 NE8500199 NE8500100 NE8500199 IS12I JIS12I IS2212 IS12S21I

    opto 22 cjc

    Abstract: E6881 L 26400 IC
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE


    OCR Scan     		PDF NE688 uE68839-T1 NE68839R-T1 24-Hour opto 22 cjc E6881 L 26400 IC

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO K-BAND GaAs MESFET NE71300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN Ga = 9.5 dB TYP at f = 12 GHz ffl 2. L g = 0.3 urn, W g = 280 nm <


    OCR Scan     		PDF NE71300 TheNE71300 NE71300 3e-12 6e-12 15e-12 5e-12 04e-12