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    NE800 Search Results

    NE800 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SiT3907AI-23-33NE-8.000000 SiTime 1 to 220 MHz, ±10 to ±50 ppm Digitally-controlled XO Datasheet
    SiT3372AC-1B9-28NE80.000000 SiTime 1 to 220 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3372AC-1B9-33NE80.000000 SiTime 1 to 220 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3372AC-2B2-25NE80.000000 SiTime 1 to 220 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3372AC-2B2-30NE80.000000 SiTime 1 to 220 MHz Ultra-low Jitter Differential VCXO Datasheet
    SiT3372AC-4E2-25NE80.000000 SiTime 1 to 220 MHz Ultra-low Jitter Differential VCXO Datasheet
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    NE800 Price and Stock

    Skyworks Solutions Inc 550NE800M000DGR

    XTAL OSC VCXO 800.0000MHZ LVDS
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    DigiKey 550NE800M000DGR Reel 250
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    • 1000 $41.68776
    • 10000 $41.68776
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    Mouser Electronics 550NE800M000DGR
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    Richardson RFPD 550NE800M000DGR 1
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    SICK AG FUM-H025F1NE80000

    FLOW ULTRASONIC METER
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    DigiKey FUM-H025F1NE80000 Bulk 1
    • 1 $4805.86
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    • 100 $4805.86
    • 1000 $4805.86
    • 10000 $4805.86
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    SiTime Corporation SIT3372AC-1E9-30NE80.000000

    MEMS OSC VCXO 80.0000MHZ LVPECL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AC-1E9-30NE80.000000 1
    • 1 $10.92
    • 10 $10.241
    • 100 $9.5583
    • 1000 $8.53417
    • 10000 $8.53417
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    SiTime Corporation SIT3372AI-1B3-28NE80.000000

    MEMS OSC VCXO 80.0000MHZ LVPECL
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    DigiKey SIT3372AI-1B3-28NE80.000000 1
    • 1 $10.19
    • 10 $9.557
    • 100 $8.9202
    • 1000 $7.96443
    • 10000 $7.96443
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    SiTime Corporation SIT3372AI-2B9-30NE80.000000

    MEMS OSC VCXO 80.0000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIT3372AI-2B9-30NE80.000000 1
    • 1 $11.21
    • 10 $10.514
    • 100 $9.8128
    • 1000 $8.76142
    • 10000 $8.76142
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    Find more NE800 price and stock on Findchips.com

    NE800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NE800898-7H Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-14 I(D) Max. (A)3.2 P(D) Max. (W)20 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.8 I(DSS) Max. (A)3.2 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.480mÂ


    Original     		PDF NE800898-7H

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    sc5 s dc 6v relay

    Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997


    Original     		PDF Corpora1-504-2860 X10679EJEV0SG00 sc5 s dc 6v relay P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


    OCR Scan     		PDF NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800

    ne8004 FET

    Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY


    OCR Scan     		PDF NE8004 NE800495-X NE800495 E800400 gm037 ne8004 FET ne800495-6 ne0800 NE8004956

    ne8002

    Abstract: NE800296 NE800199 NE800196 NE800299
    Text: C-BAND MEDIUM POWER GaAs MESFET nesooi series NE8002series FEATURES • NE800196 PidB = 26 dBm, GidB = 8.5 dB, V d s = 9 V , f = 7.2 GHz • NE800296 PidB = 29 dBm, GidB = 8 dB, Vos = 9 V, f = 7.2 GHz • BROADBAND CAPABILITY • AVAILABILITY: Hermetic Packages


    OCR Scan     		PDF NE800196 NE800296 NE8002series PARTN06 IS12I IS12S21I ne8002 NE800199 NE800299

    NE800495-4

    Abstract: NE8004 NE800495-5 NE800495-7
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES


    OCR Scan     		PDF NE8004 800495-X vol56 S12S21| NE800495-4 NE800495-5 NE800495-7

    NE8004

    Abstract: NE800495-4
    Text: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •


    OCR Scan     		PDF NE8004 NE800495-X 212vs L42752S 0DLSS40 NE800495-4

    NE8004

    Abstract: NE800 DIODE 3d ND4131-3A ND4131-3D GaAs MESFET NEC 45L package diode
    Text: N E C/ 1SE D CALIFORNIA □427414 0001=141 fi T~01'07 NEC C-BAND POWER GaAs MESFET (2 WATTS NE8004 SERIES PHYSICAL DIMENSIONS FEATURES • HIGH SENSITIVITY (Units In mm) 3A PACKAGE* • LOW DRIVE L EV E L 4.0 MIN. - • S M A L L SIZE •— 4 4.0 MIN.


    OCR Scan     		PDF b4e7414 00d1141 NE8004 b4S7414 0GDn42 NE800 DIODE 3d ND4131-3A ND4131-3D GaAs MESFET NEC 45L package diode

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    NE8002

    Abstract: NE800196 NE800 E8500 NE9001
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D


    OCR Scan     		PDF 542-15D NEZS964-1SDD NEZ7785-15D/DD NEZ4450-15D/DD NEZ3642-8D NEZ6472-1S NEZ7177-8D/DD NEZ5984-8D/DD NEZ4450-8D/DD NEZ8472-8P/DD NE8002 NE800196 NE800 E8500 NE9001

    NE800495-4

    Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D


    OCR Scan     		PDF NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196