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    BTS 132 SMD

    Abstract: No abstract text available
    Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package


    Original     		PDF PD57002-E PowerSO-10 BTS 132 SMD

    PD57045S

    Abstract: 700B AN1294 PD57045
    Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,


    Original     		PDF PD57045 PD57045S PD57045 PowerSO-10RF. PD57045S 700B AN1294

    AN1294

    Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
    Text: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF


    Original     		PDF PD57002 PD57002S PowerSO-10RF PD57002 PowerSO-10 AN1294 PD57002S BTS 472 E 0927 TRANSISTOR

    AN1294

    Abstract: PD55008 PD55008S 11 0741
    Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD55008 PD55008S PD55008 PowerSO-10RF. AN1294 PD55008S 11 0741

    2.4GHz Cordless Phone circuit diagram

    Abstract: 42 dbm 2.4GHz amplifier schematic PA2423 PA2423MB PA2423MB-EV PA2423MB-R 2.4GHz antenna schematic
    Text: PA2423MB 2.4GHz Power Amplifier IC Production Information Product Description Features A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for 2.4GHz wireless applications including tm Class 1 wireless technology and


    Original     		PDF PA2423MB PA2423MB 10-DST-01 2.4GHz Cordless Phone circuit diagram 42 dbm 2.4GHz amplifier schematic PA2423 PA2423MB-EV PA2423MB-R 2.4GHz antenna schematic

    transistor C640

    Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
    Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that


    Original     		PDF START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor bf 179 transistor c640 npn START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368

    J-STD-020B

    Abstract: PD55003L
    Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION


    Original     		PDF PD55003L PD55003L J-STD-020B

    945 TRANSISTOR

    Abstract: 700B AN1294 PD57018 PD57018S
    Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD57018 PD57018S PowerSO-10RF PD57018 945 TRANSISTOR 700B AN1294 PD57018S

    PD57002-E

    Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
    Text: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package


    Original     		PDF PD57002-E PD57002S-E 960MHz PowerSO-10RF PD57002 PowerSO-10 PD57002-E BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97

    SOT343 C5

    Abstract: SPICE 2G6 START405 START405TR
    Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR


    Original     		PDF START405 42GHz OT343 OT343 START405TR START405 500MHz-5GHz SOT343 C5 SPICE 2G6 START405TR

    BF295

    Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
    Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that


    Original     		PDF START450 19dBm 42GHz OT343 OT343 START450TR START450 500MHz-5GHz BF295 c785 C785 transistor BF 295 transistor BF 451 START450TR transistor C740

    AN1294

    Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
    Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package


    Original     		PDF PD57006-E PD57006S-E 945MHz PowerSO-10RF PD57006 PowerSO-10RF. PD570and AN1294 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E

    transistor smd po3

    Abstract: PD55003 AN1294 PD55003S
    Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE


    Original     		PDF PD55003 PD55003S PD55003 PowerSO-10RF. transistor smd po3 AN1294 PD55003S

    nec 151

    Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
    Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.


    OCR Scan     		PDF NE32900 NE32900 nec 151 transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor

    CQ 817

    Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
    Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.


    OCR Scan     		PDF EN4580 2SC4860 CQ 817 cq 0765 TRANSISTOR cq 817 ic 4580

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage


    OCR Scan     		PDF TA4003F IS12P

    Untitled

    Abstract: No abstract text available
    Text: IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip April, 1991 O ava ntek IVA-05200 Chip Outline Features • • • • • • • Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates High Gain: 30 dB typical


    OCR Scan     		PDF IVA-05200 IVA-05200

    plate capacitor

    Abstract: 8038 block diagram
    Text: 4 I9 Ö S E M I C O N D U C T O R I N C TOSÌÌ I R E L E S S C O M M U N I C A T I O N S TQ9111 Block Diagram 0.3 0.1 V D D V D D ID S S ID S S 1 2 1 -8 GHz Amplifier RF GND1 RF RF RF GND2 GND3 GND4 Product Description Features The TQ9111 is a general-purpose cascadable


    OCR Scan     		PDF TQ9111 TQ9111 3625ASW plate capacitor 8038 block diagram

    Untitled

    Abstract: No abstract text available
    Text: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz


    OCR Scan     		PDF INA-02184 INA-02186 INA-02184 INA-02186 5965-9675E 4447SA4 01fl35c

    sk 0632

    Abstract: No abstract text available
    Text: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L


    OCR Scan     		PDF NEZ5964-15D/15DL NEZ5964-8D/8DL NEZ5964-4D/40L NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL -15DL sk 0632

    jis z 0237

    Abstract: l 0734 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz


    OCR Scan     		PDF MRF5811LT1/D MRF5811LT1, 2PHX34607Q jis z 0237 l 0734 HP11590B

    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


    OCR Scan     		PDF NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889

    shock vk200

    Abstract: marking c7 sot-23 MMBFU310LT1
    Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc


    OCR Scan     		PDF MMBFU310LT1/D MBFU310LT1 OT-23 236AB) MMBFU310LT1 shock vk200 marking c7 sot-23 MMBFU310LT1

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


    OCR Scan     		PDF NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132