NE41634
Abstract: NE46134 2SC4536 AN-1001 NE46100 S21E 7100D
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST
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NE46100
NE46134
NE461
24-Hour
NE41634
NE46134
2SC4536
AN-1001
NE46100
S21E
7100D
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NE46134
Abstract: NE46134-T1 NE46100 nec k 813 2SC4536 AN-1001 S21E transistor nec cel
Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST
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NE46100
NE46134
NE461
NE46134-T1
NE46134
NE46134-T1
NE46100
nec k 813
2SC4536
AN-1001
S21E
transistor nec cel
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NE46134-T1
Abstract: No abstract text available
Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high
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NE46100
NE46134
NE46134
NE461
NE46100,
OT-89)
NE46134-T1
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NE46100
Abstract: NE46134-T1-AZ NE46134 2SC4536 AN-1001 S21E transistor at 1438 6206 SOT-89 0821 p4tl3-010
Text: NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST
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NE46100
NE46134
NE461
NE46100
NE46134-T1-AZ
NE46134
2SC4536
AN-1001
S21E
transistor at 1438
6206 SOT-89
0821 p4tl3-010
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NE46134
Abstract: FRO 021 0027 2SC4536 AN-1001 NE46100 S21E
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST
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NE46100
NE46134
NE461
NE46134
FRO 021 0027
2SC4536
AN-1001
NE46100
S21E
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ne3511s02 s2p
Abstract: ne3512s02 s2p SMD M05 sot SMD transistor M05 S06 SMD UPG2162T5N ne3210s01 NE321000 QFN2020 UPG2250T5N
Text: 2007 California Eastern Laboratories HEADQUARTERS U.S. REPS INTERNATIONAL REPS CEL 4590 Patrick Henry Drive Santa Clara CA 95054 Tel: 408 919-2500 Fax: (408) 988-0279 www.cel.com Northwest Disman Bakner (800) 347-3010 Canada BC, Alberta, Saskatchewan
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07/2M
847Indiana/Kentucky
ne3511s02 s2p
ne3512s02 s2p
SMD M05 sot
SMD transistor M05
S06 SMD
UPG2162T5N
ne3210s01
NE321000
QFN2020
UPG2250T5N
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m33 tf 130
Abstract: NESG204619 NESG2046 NESG2030M042 NESG2101M05 NE68030 NE68033 NE68039 NE68133 NE68539
Text: www.cel.com NEC Small Signal Silicon Bipolar Transistors For Low Current, Low Voltage Applications Part Number TEST f GHz NF/GA VCE ICQ (V) (mA) MAG / MSG NF GA TYP TYP VCE IC TYP (dB) (dB) (V) (mA) (dB) fT TYP hFE (GHz) TYP
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NE68039
NE68139
NE68539
NE85639
OT-143
ne68000
ne68100
ne85600
UPA862TD
NE894
m33 tf 130
NESG204619
NESG2046
NESG2030M042
NESG2101M05
NE68030
NE68033
NE68039
NE68133
NE68539
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SMD transistor M05
Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR
Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE
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10/2M
SMD transistor M05
smd TRANSISTOR code m05
wy smd transistor
UPD5740
NE66200
TRANSISTOR m05 smd
UPD5740T6N
UPG2159T6R
SMD transistor M05 driver
50 VOLTS 5 amp smd sot-89 TRANSISTOR
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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08/2M
SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST ID O
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NE46100
NE46134
NE46134
NE461
OT-89)
160jj
NE46134-T1
24-Hour
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MJ 15007 transistor
Abstract: MJ 15007 NE41634 transistor XM SOT-89 Transistor 33735 low noise transistor bc 179 NE46134 equivalent
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz
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NE46100
NE46134
NE46134
NE461
b427525
b5L37
OT-89)
MJ 15007 transistor
MJ 15007
NE41634
transistor XM SOT-89
Transistor 33735
low noise transistor bc 179
NE46134 equivalent
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ne46134
Abstract: NE46134 equivalent ne461
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz
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NE46100
NE46134
NE46134
NE461
7100D
-12S2L
OT-89)
NE46134 equivalent
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz
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NE46100
NE46134
NE46134
NE461
7100D
IS12I
J52lL
IS12S21I
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Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -4 0 dBc • HIGH OUTPUT POWER : 2 7 .5 dBm at T Y P • LOW NOISE: 1.5 dB T Y P at 5 0 0 M H z
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NE46100
NE46134
NE46134
sur208
NE46100,
OT-89)
NE46134-T1
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73412
Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7
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NE46134
NE85634
NE46734
NE85634
NE46134
NE85619
NE68119
73412
NE64535
CHIP transistor 348
fvh 38
p08c
NE68039
NE889
NE02135
NE64500
NE24318
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Untitled
Abstract: No abstract text available
Text: Medium Power Bipolar Transistors -i : . ,*&• M l VCE Pm dBM TYP (dBM) VCE (V) fc <mA> (V) (mA) Mm m. / -fr:.; λ TYP 'rrtifria' (dB) r. JH H S L 2.0 12.5 100 19 27 10 100 9.8 5.5 100 NE46134 1.0 . 12.5 100 20.5 27.5 10 50 9 5.5 100 ] 250 NE461M02 1.0
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NE46100
NE46134
NE461M02
NE85634
NE856M02
OT-89
NE94430
NE94433
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uPA63
Abstract: UPA827TF UPA831TF NE685
Text: Small Signal Bipolar Selection Guide LOW NOISE BIPOLAR TRANSISTORS Part Number TEST NF/Ga NF/Ga NF Ga MAG ISîIEl* ft 1 Vce tc TYP TYP V ce le TYP TYP GHz (mA) (dB) (dB) (dB) (V) (mA) (dB) (GHz) (V) hrt TYP le MAX (mA) Package Description Pkg, Code Screening
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UPA800T
UPA801T
UPA802T
UPA806T
UPA807T
UPA808T
UPA809T
URA810T
UPA811T
UPA812T
uPA63
UPA827TF
UPA831TF
NE685
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