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    2SC2340 Search Results

    2SC2340 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2340 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC2340 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2340 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2340 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2340 NEC Medium Power Microwave Transistors Scan PDF

    2SC2340 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2291

    Abstract: 2SC2320 2SC2338 2SC2285A-MA 2SA1010 2SC2289 2SC2318 2SC2329 2SC2286-KA 2SC2287-KA
    Text: - 120 - m % Ta=25'C, *EP(iTc=25<C m % f t & m & VcBO Vc e o (V) (V) 1c ( d c ) (A) Pc Pc* (W) m i CBC\ vm 3x j? VcB (V) (Uk) , hF E (min) ft fê (max) tt (Ta=25‘ 1C) Ic / I e (A) Vc e (V) 2SC2287-KA Bn an Bn Bn 2SC2287-MA bm VHF PA 38 18 1.5 17 500 30


    OCR Scan
    2SC2285A-MA 2SC2286-KA 2SC2286-MA 2SC2287-KA 2SC2287-MA 2SC2288-KÃ 2SC2288-MA 2SC2289-KA 33dBm 175MHz 2SC2291 2SC2320 2SC2338 2SA1010 2SC2289 2SC2318 2SC2329 PDF

    2SC2340

    Abstract: NE568 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857
    Text: NEC/ □427414 0001323 4 1SE D CALIFORNIA r-3 3 -c s NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 SER IES FEATURES DESCRIPTION AND APPLICATIONS • H IG H fs : 4.2 GHz The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan
    L427414 r-33-0S NE568 NE56800 operate-69 2SC2340 MR 6500 BM74 2SC2339 NE56800 NE56803 NE56853 NE56854 NE56857 PDF

    2SC2340

    Abstract: transistor BJ 102 131 NE56800 2SC2339 NE568 NE56803 NE56853 NE56857 NE56887 ne56853e
    Text: NEC/ 1SE D CALIFORNIA □42 741 4 0001323 4 r-3 3 -c S NPN MEDIUM POWER MICROWAVE TRANSISTOR NE568 S E R IE S FEATURES DESCRIPTION AND APPLICATIONS • H IG H f s : 4.2 G H z The NE568 series of NPN silicon medium power transistors is designed for medium power S and C band linear amplifiers


    OCR Scan
    L427414 r-33-0S NE568 NE56800 2SC2340 transistor BJ 102 131 NE56800 2SC2339 NE56803 NE56853 NE56857 NE56887 ne56853e PDF

    m28 transistor

    Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
    Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z


    OCR Scan
    b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E PDF