NE76084
Abstract: marking code t1a NE76084-T1 C10535E NE76084-SL NE76084-T1A
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NE76084-T1
Abstract: NE76083A NE76084S 4439 gm
Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL
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NE76084S
NE76084S
NE76084-T1
24-Hour
NE76084-T1
NE76083A
4439 gm
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gs 069 0605
Abstract: NE76084 marking code t1a nec 2571 NE76084-T1 C10535E NE76084-SL NE76084-T1A 6-18GHz NEC Ga FET marking V
Text: DATA SHEET GaAs MES FET NE76084 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES PACKAGE DIMENSIONS Unit: mm • Low noise figure & High associated gain NF = 1.6 dB TYP., Ga = 9.0 dB TYP. at f = 12 GHz 1.78 ± 0.2 • Gate length: L g = 0.3 µ m
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NE76084
NE76084-T1
NE76084-T1A
gs 069 0605
NE76084
marking code t1a
nec 2571
NE76084-T1
C10535E
NE76084-SL
NE76084-T1A
6-18GHz
NEC Ga FET marking V
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4439 gm
Abstract: NE76083A NE76084S NE76084-T1
Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5
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NE76084S
NE76084S
NE76084-T1
24-Hour
4439 gm
NE76083A
NE76084-T1
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0544S
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V d s = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 24 HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz 21 CO L g = 0.3 ^m , W g = 280 jam
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OCR Scan
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NE76084S
NE76084S
IS12I
IS12I
IS22I
NE76084-T1
0544S
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yx 861
Abstract: yx 801 BUH 508 VAUC GT 1083 NE76084-T1 NE76083A NE76084S L to Ku Band Low Noise GaAs MESFET x band GaAs MESFET 261
Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084S NOISE FIGURE ANO ASSOCIATED GAIN vs FREQUENCY Vos = 3 V, Id s • 10 mA FEATURES LOW NOISE FIGURE NF * 1,6 d8 TYP a! f = 12 GHz HIGH ASSOCIATED GAIN G a = 9 0 0 TYP at f • 12 GHz LG • 0.3 ¿im. W g = 280 S LOW COST METAL/CERAMIC PACKAGE
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NE76084S
NE76064S
NE76084S
test1342
NE76084-T1
yx 861
yx 801
BUH 508
VAUC
GT 1083
NE76083A
L to Ku Band Low Noise GaAs MESFET
x band GaAs MESFET 261
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IC DS 1242
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • NE76084S LOW NOISE FIGURE NF = 1.6 dB TYP at f= 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • Lg = 0.3 [im, Wg = 280 \im
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NE76084S
NE76084S
S12S21|
NE76084-T1
24-Hour
IC DS 1242
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LORB
Abstract: NE2720 NE334S01
Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18
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NE23300
NE24200
NE27200
NE67400
NE32400
NE32500
NE32900
NE33200
NE325S01
NE329S01
LORB
NE2720
NE334S01
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Untitled
Abstract: No abstract text available
Text: LOW NOISE LTO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE NF - 1.6 dB TYP at f - 12 GHz HIGH ASSOCIATED GAIN G a = 9 dB TYP at f = 12 GHz m 33 , L g = 0.3 jim, Wg = 280 jim <
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OCR Scan
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NE76084
E76084
IS12S21I
NE76084S
NE76084-T1
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NE76084
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE
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OCR Scan
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NE76084
NE76084
GHz21
lS211
NE76084S
NE76084-T1
00b5511
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Untitled
Abstract: No abstract text available
Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at 1 = 12 GHz • La s 0.3 iim, Wa = 280 |xm
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NE76084
NE76084
NE76084S
NE76084-T1
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