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    ne800299

    Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY


    OCR Scan     		PDF NE800196 NE800296 NE8001 NE8002 lS21l lS22l IS12I L42752S ne800299 NE800199 NE800200 40MAG NE800

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    NE8002

    Abstract: NE800196 NE800 E8500 NE9001
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D


    OCR Scan     		PDF 542-15D NEZS964-1SDD NEZ7785-15D/DD NEZ4450-15D/DD NEZ3642-8D NEZ6472-1S NEZ7177-8D/DD NEZ5984-8D/DD NEZ4450-8D/DD NEZ8472-8P/DD NE8002 NE800196 NE800 E8500 NE9001

    ne8002

    Abstract: NE800296 NE800199 NE800196 NE800299
    Text: C-BAND MEDIUM POWER GaAs MESFET nesooi series NE8002series FEATURES • NE800196 PidB = 26 dBm, GidB = 8.5 dB, V d s = 9 V , f = 7.2 GHz • NE800296 PidB = 29 dBm, GidB = 8 dB, Vos = 9 V, f = 7.2 GHz • BROADBAND CAPABILITY • AVAILABILITY: Hermetic Packages


    OCR Scan     		PDF NE800196 NE800296 NE8002series PARTN06 IS12I IS12S21I ne8002 NE800199 NE800299

    NE800296

    Abstract: ne800299 NE8002 NE8001 NE800199 NE800196 NE800
    Text: C-BAND MEDIUM POWER GaAs MESFET n es o o i s e r ie s NE8002SER,ES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, V ds = 9 V, f = 7.2 GHz BROADBAND C APABILITY AVAILABILITY: CO Hermetic Packages


    OCR Scan     		PDF NE800196 NE800296 8002S NE8001 NE8002 ne800299 NE800199 NE800

    NE800495-4

    Abstract: GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196
    Text: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 2 5 °C Mr 1 v . j Limar PomrMdad Giln <« Effldtncy %) vn (6Hi) (dBm) NEZ4450-15D 4.4 to 5.1 42.5 10.0 35 10.0 NEZ4450-15DD 4.410 5.1 42.5 10.0 35 NEZ4450-8D


    OCR Scan     		PDF NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD MEZ4450-4D NEZ4450-4DD MEZ5964-15D NEZ5964-15DD NEZ5964-8D KEZ5964-8DD NE800495-4 GaAs MESFET NE900474-15 NE800400 NE8004 NE800296 NES2527-20B NE900400 NES1417-20B NE800196