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    UPB585B

    Abstract: UPB585G BF08 UPB585 UPB585P VLN 2003 pm 532 "power supply"
    Text: NEC/ 5bE T> CALIFORNIA NEC b427414 QGGEbOG ÔCH H N E C C ' UPB585B UPB585G UPB585P 2.5 GHz DIVIDE-BY-4 PRESCALER OUTLINE DIMENSIONS FEATURES 'T * 4 S - \0 i- i3 Units in mm OUTLINE BF08 • H IG H FREQ UENC Y OPERATION: 2.5 GHz • W ID E BAND APPLICATION: 0.5 to 2.5 GHz


    OCR Scan     		PDF b427414 UPB585B UPB585G UPB585P UPB585 UPB585B) UPB585G) UPB585P) 4274m UPB585B, BF08 UPB585P VLN 2003 pm 532 "power supply"

    ND587T-3B

    Abstract: diode RU 3B n058 MONOLITHIC DIODE ARRAYS ND587R-3C ND587R-3P ND587R-3R ND587T-3P ND587T-3R 3p-01
    Text: t 1SE NEC N E C / CALIFORNIA D • b427414 DDOnHS T - o i- m T G aA s S C H O T T K Y B A R R IE R D IO D E A R R A Y ND587 S E R IE S FEATURES ABSO Ll TE MAXIMUM RATINGS Ta = 25°C • MONOLITHIC ARRAYS SYMBOLS RATINGS Vr • WIDEBAND OPERATION « SMALL SIZE


    OCR Scan     		PDF ND587 ND587T ND587R forND587T-3B ND587R-3C, ND587R-3P. ND587R-3R ND587T-3P, ND587T-3R ND587T-3B diode RU 3B n058 MONOLITHIC DIODE ARRAYS ND587R-3C ND587R-3P ND587R-3R ND587T-3P ND587T-3R 3p-01

    ND4151-3A

    Abstract: ND4151-3D
    Text: N E C / CALIFORNIA 1SE D • b427414 0001=145 S SEC K-BAND SILICON MIXER-DETECTOR SCHOTTKY DIODE ND4151-3A ND4151-3D OUTLINE DIMENSIONS FEATURES Units in mm • HIGH SENSITIVITY OUTLINE 3A • LOW DRIVE LEVEL • SMALL SIZE ' 4.0 MIN. - — • LOW COST


    OCR Scan     		PDF b427414 ND4151-3A ND4151-3D ND4151-3A ND4151-3D

    nec d 588

    Abstract: UPC1677C UPC1677 UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586
    Text: E C/ CALIFORNIA SbE D b427414 DDDSbSM TÒT * N E C C NEC UPC1677B UPC1677C UPC1677P 1.7 GHz MEDIUM POWER BROADBAND SILICON MMIC AMPLIFIER =T-1H-6-Ol OUTUNE DIMENSIONS FEATURES • HIGH POWER OUTPUT + 1 9 .5 d B m Units in mm O U T U N E B08 • EXCELLENT FREQUENCY RESPONSE:


    OCR Scan     		PDF b427414 0002b54 UPC1677 UPC1677B) UPC1677C) UPC1677P) PARA5-89 b4E7414 D002bS6 nec d 588 UPC1677C UPC1677B UPC1677P 8-lead 3.gnd dip 7.vcc NEC D 586

    NE98203

    Abstract: 2SC1662 NE98200 NE98208 2SC1660 NE98241 S21E
    Text: NEC/ CALIFORNIA 5bE D b427414 GODESSE =Î43 « N E C C - T -3 1 -Z NEC NE98200 NE98203 NE98208 NE98241 NPN SILICON HIGH SPEED SWITCHING TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • W ID E D Y N A M IC R A N G E The N E982 series of N PN silicon transistors features a high


    OCR Scan     		PDF NE98200 NE98203 NE98208 NE98241 NE982 transis24 2SC1662 2SC1660 NE98241 S21E

    ND3000

    Abstract: ND3138 3A ND3048 ND3049 ND3050 3A diode green T 3D 24 DIODE varactor diode high frequency GHz
    Text: NEC/ CALIFORNIA 1SE D NEC b427414 Q00n02 T ND3000 SERIES S TO K-BAND G aAs VARACTOR DIODE OUTLINE DIMENSIONS FEATURES • H IG H C U T O F F F R E Q U E N C Y ; fc -6 = 250 G H z ND3048 fc -6 = 270 G H z ND3138 1 (Units In mm) OUTLINE 3A «- 4.0 MIN.


    OCR Scan     		PDF b427414 Q001102 ND3000 ND3048 ND3138 CJO/GJ-25 ND3050 ND3049 ND3050 ND3138 3A 3A diode green T 3D 24 DIODE varactor diode high frequency GHz

    2SC2037

    Abstract: 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432 NE734
    Text: N E C / CALIFORNIA b427414 OGOlHb? 1SE D N EC b -T -ll-tf NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW N O ISE FIG U R E: < 3 dB at 500 MHz The NE734 series of NPN silicon general purpose UHF transis­ tors provide the designer with a wide selection of reliable


    OCR Scan     		PDF b427414 NE734 r-31-27 NE73435) 2SC2037 2SC1733 2SC1424 2SC2759 ne73436 JE73 2sc2026 2SC2148 NE73432

    20PM4

    Abstract: NE985100 NE985200 NE985400
    Text: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)


    OCR Scan     		PDF h427414 00015b? NE985 NE985100 NE985100 NE985200 NE985400 NE985200 NE985400 20PM4

    NE202 circuit

    Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
    Text: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)


    OCR Scan     		PDF b427414 NE202 NE202XX) NE202XX-1 NE20248) NE20283A) NE202 circuit NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574

    impatt diode

    Abstract: DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22
    Text: NEC/ CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE T - o 7 i ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND8N40W ND8L60W-1T ND8J80W ND8G96W-1T impatt diode DIODE 5H impatt 1ST11 d8030 ND8M30-1N BV-1 1ST22

    NE02136

    Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
    Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


    OCR Scan     		PDF b427414 000137S NE021 3l-17 NE02136 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package

    2SC2150

    Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
    Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use


    OCR Scan     		PDF bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42

    2SC4087

    Abstract: 2SC4090 NE73439 NE73439B
    Text: NEC/ 5bE D CALIFORNIA NEC b427414 00024btì b4T • N E C C T - 'S l- is NPN SILICO N GENERAL PU RPO SE TRANSISTO R NE73439 NE73439B OUTLINE DIMENSIONS FEATURES • H IG H G A IN BA N D W ID T H P R O D U C T : Units in mm OUTLINE 39 (SOT-143) 2.0 GHz (TYP)


    OCR Scan     		PDF b457414 NE73439 NE73439B NE73439B 2SC4087 2SC4090

    2SK281

    Abstract: sl2109
    Text: N E C / 15E D CALIFORNIA SEC • b427414 QOOlblS 0 T - 3 t- 2 C LOW NOISE X-BAND GaAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V ER Y H IG H fmax: 60 GHz The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure


    OCR Scan     		PDF b427414 NE21800 NE21889 NE218 NE21800) NE21889) 2SK281 sl2109

    varactor ghz

    Abstract: gaas varactor diodes ND3139-5M ND3139-5N ND3139-5S GaAs varactor diode power varactor
    Text: i N E C / CALIFORNIA 1SE D NEC T-oi~n b427414 O O O n Q b b MM WAVE GaAs VARACTO R D IO DE OUTLINE D IM EN SIO N S FEATURES ND3139-5S ND3139-5M ND3139-5N Units In mm O UTLINE S S • LOW C O N V ER SIO N LO SS: Lo = 7.5 dB TYP at f = 20 GHz to 40 GHz, P in = +16 dBm


    OCR Scan     		PDF L427414 ND3139-5S ND3139-5M ND3139-5N b427414 ND3139-5S, ND3139-5M, LTPD10% varactor ghz gaas varactor diodes ND3139-5N GaAs varactor diode power varactor

    impatt diode

    Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
    Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz


    OCR Scan     		PDF b427414 ND487C1-3R ND487C2-00 ND487C2-3P ND487C2-3R ND487R1-00 ND487R1-3P ND487R1-3R ND487R2-00 ND487R2-3P impatt diode 1ST23 ND487 ND8L60W1T impatt 1ST11 ND8M30-1N

    2SC3660A

    Abstract: nec 2sc3660A diode gp 426 2SC3660 NEM060C69-28 NEM080C69-28 NEM080CC9-28 NEM080CM-28 4a7m1 J11J
    Text: NEC/ CALIFORNIA SbE D b427414 0002550 NEC CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR 7 44 « N E C C NEM060C69-28 NEM080C69-28 OUTLINE DIMENSIONS FEATURES Units in mm O U TLIN E 69 • HIGH P O W E R A N D H IGH GAIN: Vcc = 28 V, C lass A B N EM 080C69-28: Po = 49.6 dBm, G p = 5.6 dB (TYP)


    OCR Scan     		PDF b427414 NEM060C69-28 NEM080C69-28 NEM080C69-28: NEM060C69-28: NEM080CM-28 4a7M14 NEM060C69-28, 2SC3660A nec 2sc3660A diode gp 426 2SC3660 NEM080CC9-28 4a7m1 J11J

    PJ 3139

    Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
    Text: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “


    OCR Scan     		PDF b427414 Q001bS3 NE25137 NE25139 NE251 NE76084 Rn/50 PJ 3139 NEC Ga FET marking L NE25139 DUAL FET marking JE FET fet dual gate sot143

    2SC1593

    Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
    Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is


    OCR Scan     		PDF b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189

    m28 transistor

    Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
    Text: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z


    OCR Scan     		PDF b427414 NE56900 NE56953E NE56954 NE56987 NE569 NE56987 m28 transistor 2SC2340 S21E

    Untitled

    Abstract: No abstract text available
    Text: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S


    OCR Scan     		PDF b427414 ND5051-3A ND5051-3G ND5051-5E ND5051 D5051-3A 5051-3G D5051-5E ND5051-3A, ND5051-3G,

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


    OCR Scan     		PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223

    UPB584B

    Abstract: No abstract text available
    Text: NEC/ CALIFORNIA 5bE D NEC b427414 GQGEST? 4*14 M N E C C UPB584B UPB584G UPB584P 2.5 GHz DIVIDE-BY-2 PRESCALER ! "T-MS-l0! -\3 OUTLINE DIMENSIONS FEATURES • HIGH FREQUENCY OPERATION: 2.5 GHz Units in mm OUTLINE BF08 • WIDE BAND APPLICATION: 0.5 to 2.5 GHz


    OCR Scan     		PDF b427414 UPB584B UPB584G UPB584P UPB584 UPB584B, UPB584G,

    1S1855

    Abstract: diode 5f NEC 1s1855 1S1857 1S1856 snap-off diode ND1551-7F ND1561-5F ND1571-5F
    Text: NEC / 1SE D CALIFORNIA NEC b427414 0001*134 V - 0 7 't f ND1 5 5 1 -7 F ND1 5 6 1 -5 F ND1 5 7 1 -5 F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES • U L T R A S H O R T R E V E R S E TU R N O N TIME Units in mm OUTLINE 5F • H IG H RELIABILITY • LO W C O S T


    OCR Scan     		PDF b427414 ND1551-7F ND1561-5F ND1571-5F ND1551 ND1571-5F ND1551-7F, ND1561-5F, 1S1855 diode 5f NEC 1s1855 1S1857 1S1856 snap-off diode