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    International Rectifier IRFY044C

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    Bristol Electronics IRFY044C 16
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    Quest Components IRFY044C 9
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    International Rectifier IRFY044CMSCV

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    International Rectifier IRFY044CM

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    International Rectifier IRFY044CMSCX

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    IRFY044C Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY044C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044C Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY044C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY044C-D Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CJTX Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CJXV Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044CM International Rectifier Power MOSFET Original PDF
    IRFY044CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRFY044C Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFY044C

    Abstract: IRFY044CM 91285D
    Text: PD - 91285D POWER MOSFET THRU-HOLE TO-257AA IRFY044C,IRFY044CM 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91285D O-257AA) IRFY044C IRFY044CM IRFY044C IRFY044C, O-257AA IRFY044CM 91285D PDF

    IRFY044C

    Abstract: IRFY044CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		1285C IRFY044CM IRFY044C IRFY044CM PDF

    IRF044C-C

    Abstract: IRFY004C-A IRFY004C-B IRFY044C IRFY044C-D IRFY044CJTX IRFY044CJXV
    Text: IRFY044C MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 FEATURES 0.89 1.14 2.65 2.75 2.54


    Original     		IRFY044C IRFY044C IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV IRFY044CJT IRF044C-C IRFY004C-A IRFY004C-B IRFY044C-D IRFY044CJTX IRFY044CJXV PDF

    IRFY044C

    Abstract: IRFY044CM
    Text: Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		1285C IRFY044CM IRFY044C IRFY044CM PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 91285D POWER MOSFET THRU-HOLE TO-257AA IRFY044C,IRFY044CM 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		91285D O-257AA) IRFY044C IRFY044CM IRFY044C IRFY044C, O-257AA PDF

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 PDF

    IRFY044

    Abstract: IRFY044C IRFY044CM IRFY044M
    Text: PD - 94181 POWER MOSFET THRU-HOLE TO-257AA IRFY044,IRFY044M 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044 0.040 Ω 16*A Glass IRFY044M 0.040 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		O-257AA) IRFY044 IRFY044M IRFY044 IRFY044, O-257AA IRFY044C IRFY044CM IRFY044M PDF

    IRFM9034

    Abstract: irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261
    Text: International Rectifier Government and Space Products BVDSS Part Number Channel V RDS(on) (Ω) PD @ TC = 25°C ID @ T =100°C C (A) ID @ T =25 C (A) Total Dose Rating Rads (Si) (W) Fax-on-Demand HEXFET Power MOSFETs to view a data sheet, click on the part number


    Original     		IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230 IRHE9130 IRHE9230 IRHG7110 IRHG6110 IRFM9034 irh7c50se IRFM460 irhy IRFE310 international rectifier p JANSR2N7261 PDF

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS PDF

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF PDF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94181 POWER MOSFET THRU-HOLE TO-257AA IRFY044,IRFY044M 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044 0.040 Ω 16*A Glass IRFY044M 0.040 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		O-257AA) IRFY044 IRFY044M IRFY044 IRFY044, O-257AA PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    2N7550

    Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
    Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED  Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators


    Original     		PDF

    fet 500v 10A

    Abstract: 130NC IRFM044
    Text: Search Results Part number search for devices beginning "IRFM360" Datasheets are downloaded as Acrobat PDF files. Semelab Home Fet Products ID cont (A) PD (W) RDSS (Ω) CISS (pF) QG (nC) PRODUCT Polarity Package VDSS (V) IRFM360 N-Channel TO254 400V 23A


    Original     		IRFM360" IRFM360 IRFM360-JQR-B 4200pF 140nC 140nC IRFM044" IRFM044 IRFM044-JQR-B fet 500v 10A 130NC PDF

    2N6782 JANTX

    Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
    Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE


    Original     		IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX PDF

    2n4441 transistor

    Abstract: SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS M E TA L PA C K A G E S F O R N E W D E S I G N S TO257 TO254 TO258 TO267 Tabless Z-Tab Flexy-Lead P O W E R M O S F E T S , T R A N S I S T O R S , D I O D E S , V O L TA G E R E G U L AT O R S


    Original     		O257AA O257AB* IP117AG IP117AHVG IP117G IP117HVG IP120AG-05-12-15 IP120G-05-12-15 IP123AG-05-12-15 2n4441 transistor SML1004RGN IRFV360 semelaB irfy430 BUZ10 BUZ50 2N6661 BYV34 Series 2N4441 BYV29 Series PDF

    IRHNJ597230SCS

    Abstract: international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS
    Text: PD - 94047A RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597130 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597130 100K Rads (Si) IRHNJ593130 300K Rads (Si) RDS(on) ID 0.205Ω -12.5A 0.205Ω -12.5A SMD-0.5


    Original     		4047A IRHNJ597130 IRHNJ593130 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNJ597230SCS international rectifier SMD 30CLJQ100SCS IRHNJ597034SCS IRHG6110SCS IRHNJ57234SESCS IRFE130SCX 35CLQ045SCS IRHNJ597130SCS IRHNJ7430SESCS PDF

    IRF044C-C

    Abstract: No abstract text available
    Text: nil =Vr= INI SEM E IRFY044C LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dim ensions in mm inches 4.70 5.00 10.41 V DSS ID(cont) ^DS(on) 60V 20A 0.035ft FEATURES HERMETICALLY SEALED T 0-220 METAL PACKAGE 2.75 BSC LIGHTWEIGHT T0-220M - Metal Package


    OCR Scan     		IRFY044C 035ft T0-220M IRFY044C IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­


    OCR Scan     		1285C IRFY044CM 4A55452 PDF

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034 PDF

    Untitled

    Abstract: No abstract text available
    Text: International HHRectifier Provisional Data Sheet No. PD 9.1285 I R HEXFET POWER MOSFET F Y 0 4 4 C M OD N-CHANNEL ôs Description Product Summary Characteristic HEXFET® technology is the key to Inte rn a tio n a l Rectifier’s advanced line of power MOSFET transistors.


    OCR Scan     		switchi57AA QQ22ficJ5 PDF

    MNT-LB32N16-C4

    Abstract: T0254 sml1001r1avr SM5104
    Text: SEMELABpIc SELECTOR GUIDE MOS PRODUCTS VDSS Type_No Technology Polarity Package IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250


    OCR Scan     		ei998 IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 MNT-LB32N16-C4 T0254 sml1001r1avr SM5104 PDF