HFA08PB120
Abstract: IRFP250
Text: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08PB120
140nC
O-247AC
HFA08PB120
IRFP250
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AAAA series SMD transistor
Abstract: No abstract text available
Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2
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PD-20603
HFA08TB120S
140nC
HFA08TB120S
08-Mar-07
AAAA series SMD transistor
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Untitled
Abstract: No abstract text available
Text: PD - 95680A HFA08PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V BASE CATHODE Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VF typ. * = 2.4V 4 IF (AV) = 8.0A
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5680A
HFA08PB120PbF
140nC
O-247AC
HFA08PB120
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UFP254 Preliminary Power MOSFET 23A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFP254 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can
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UFP254
UFP254
140nC)
UFP254L-TF2-T
UFP254G-TF2-T
O-220F2
QW-R502-822
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HFA08TB120
Abstract: IRFP250
Text: Bulletin PD -2.383 rev. C 11/00 HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM VR = 1200V VF typ. * = 2.4V BASE CATHODE Features • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08TB120
140nC
O-220AC
HFA08TB120
constr33
IRFP250
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MAX15500
Abstract: No abstract text available
Text: 19-4602; Rev 0; 6/09 Industrial Analog Current/ Voltage-Output Conditioners The MAX15500/MAX15501 analog output conditioners provide a programmable current up to Q24mA, or a voltage up to Q12V proportional to a control voltage signal. The control voltage is typically supplied by an external
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MAX15500/MAX15501
Q24mA,
MAX15500
MAX15501.
T3255
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MAX5972
Abstract: MAX5972B MAX15000 JESD51-5
Text: 19-4924; Rev 1; 2/10 TION KIT EVALUA BLE A IL A V A IEEE 802.3af/at-Compliant, Powered Device Interface Controller with Integrated Power MOSFET Features The MAX5972A provides a complete interface for a powered device PD to comply with the IEEE 802.3af/
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MAX5972A
180mA
720mA
880mA)
MAX5972B
MAX5972A
MAX5972
MAX15000
JESD51-5
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Untitled
Abstract: No abstract text available
Text: 19-5955; Rev 0; 6/11 TION KIT EVALUA BLE IL AVA A 4-Channel, Automotive Class D Audio Amplifier The MAX13301 combines four high-efficiency Class D amplifiers with integrated diagnostic hardware for reliable automotive audio systems, and delivers up to 80W
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MAX13301
U48ER
MAX13301
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60N6S2D
Abstract: FGK60N6S2D LD26 TA49346
Text: FGK60N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description Features The FGK60N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau
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FGK60N6S2D
FGK60N6S2D
100kHz
200kHZ
60N6S2D
LD26
TA49346
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Untitled
Abstract: No abstract text available
Text: IRF9130SMD05N IRFN9130SMD05 MECHANICAL DATA Dimensions in mm inches 3 .6 0 (0 .1 4 2 ) M a x . 3 VDSS ID(cont) RDS(on) 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 )
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IRF9130SMD05N
IRFN9130SMD05
-100V
IRF9130SMD05
IRFN913"
IRFN9130SMD05
IRFN9130SMD05-JQR-B
O276AA)
860pF
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SKB04N60
Abstract: SKP04N60
Text: SKP04N60 Preliminary SKB04N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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SKP04N60
SKB04N60
O-220AB
Q67040-S4216
O-263AB
Q67040-S4229
Aug-99
SKB04N60
SKP04N60
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SKB06N60
Abstract: 25E-4 Q67040-S4230 Q67040-S4231 SKP06N60
Text: SKP06N60 Preliminary SKB06N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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SKP06N60
SKB06N60
O-220AB
Q67040-S4230
O-263AB
Q67040-S4231
Aug-99
SKB06N60
25E-4
Q67040-S4230
Q67040-S4231
SKP06N60
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SKB02N60
Abstract: SKP02N60
Text: SKP02N60 Preliminary SKB02N60 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for:
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SKP02N60
SKB02N60
O-220AB
Q67040-S4214
O-263AB
Q67040-S4215
Aug-99
SKB02N60
SKP02N60
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smps inverter
Abstract: No abstract text available
Text: SKP02N120 Preliminary SKB02N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 50% lower Eoff compared to previous generation • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution
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SKP02N120
SKB02N120
O-220AB
Q67040-S4278
O-263AB
Q67040-S4279
Sep-99
smps inverter
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DI 380 Transistor
Abstract: HFA08TB120S IRFP250 140N
Text: PD - HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA08TB120S
140nC
HFA08TB120S
DI 380 Transistor
IRFP250
140N
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2383A
Abstract: HFA08TB120 IRFP250
Text: PD -2.383A HFA08TB120 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA08TB120
140nC
HFA08TB120
2383A
IRFP250
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MAX5969BETB
Abstract: MAX5969 "powered device"
Text: 19-5008; Rev 0; 12/09 TION KIT EVALUA BLE AVAILA IEEE 802.3af/at-Compliant, Powered Device Interface Controllers with Integrated Power MOSFET Features The MAX5969A/MAX5969B provide a complete interface for a powered device PD to comply with the IEEE 802.3af/at standard in a power-over-Ethernet (PoE) system. The MAX5969A/MAX5969B provide the PD with a
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MAX5969A/MAX5969B
180mA
720mA
880mA)
T1033
MAX5969BETB
MAX5969
"powered device"
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HFA08TB120
Abstract: No abstract text available
Text: Bulletin PD -2.383 rev. B 04/00 HFA08TB120 TM HEXFRED Ultrafast, Soft Recovery Diode VR = 1200V VF typ. * = 2.4V Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions
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HFA08TB120
140nC
O-220AC
HFA08TB120
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MAX5980
Abstract: MAX5980GTJ
Text: 19-5568; Rev 1; 09/11 Quad, IEEE 802.3at/af PSE Controller for Power-over-Ethernet Features The MAX5980 is a quad, power-sourcing equipment PSE power controller designed for use in IEEE 802.3at/af-compliant PSE. This device provides powered device (PD) discovery, classification, current limit, and
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MAX5980
MAX5980
MAX5980GTJ
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD BSS127 Power MOSFET 0.021A, 600V SMALL-SIGNAL-TRANSISTOR DESCRIPTION The UTC BSS127 is an enhancement N-channel mode Power FET, it uses UTC’s advanced technology to provide customers ultra high switching speed and ultra low gate charge.
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BSS127
BSS127
140nC)
BSS127L-AE2-R
BSS127G-AE2-R
BSS127L-AE3-R
BSS127G-AE3-R
OT-23-3
OT-23
QW-R502-824
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Untitled
Abstract: No abstract text available
Text: Bulletin PD -2.365 rev. B 11/00 HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • VR = 1200V BASE CATHODE Features VF typ. * = 2.4V Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 4
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HFA08PB120
140nC
O-247AC
HFA08PB120
08-Mar-07
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FGH60N6S2D
Abstract: 60N6S2 FGH40N6S2 FGH60N6S2 LD26
Text: FGH60N6S2 600V, SMPS II Series N-Channel IGBT General Description Features The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and avalanche capability UIS . These LGC devices
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FGH60N6S2
FGH60N6S2
100kHz
200kHZ
FGH60N6S2D
60N6S2
FGH40N6S2
LD26
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Untitled
Abstract: No abstract text available
Text: International lOR Rectifier PD-2.365A HFA08PB120 Ultrafast, Soft Recovery Diode HEXFRED Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche Specified at Operating Conditions V F typ. * = 2.4V
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HFA08PB120
140nC
HFA08PB120
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Untitled
Abstract: No abstract text available
Text: PD -2.365A International IQR Rectifier HFA08PB120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • V R = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very L ow Q rr Guaranteed Avalanche Specified at Operating Conditions
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HFA08PB120
140nC
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