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    Infineon Technologies AG IRFY044

    Transistor MOSFET N-Channel 60V 16A 3-Pin TO-257AA - Bulk (Alt: IRFY044)
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    International Rectifier IRFY044C

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    Bristol Electronics IRFY044C 16
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    Quest Components IRFY044C 9
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    IRFY044 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFY044 International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044 Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY044 International Rectifier HEXFET Transistors Scan PDF
    IRFY044C International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044C Semelab N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Original PDF
    IRFY044C Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY044C-D Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CJTX Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CJXV Semelab FET, 2 VThreshold, ID 20 A Original PDF
    IRFY044CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044CM International Rectifier HEXFET Power Mosfet Original PDF
    IRFY044CM International Rectifier Power MOSFET Original PDF
    IRFY044CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFY044M International Rectifier 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Original PDF
    IRFY044M Semelab N-Channel MOSFET in a Hermetically Sealed TO257AB Metal Package Original PDF
    IRFY044M International Rectifier HEXFET Transistors Scan PDF

    IRFY044 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFY044

    Abstract: IRFY044C IRFY044CM IRFY044M
    Text: PD - 94181 POWER MOSFET THRU-HOLE TO-257AA IRFY044,IRFY044M 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044 0.040 Ω 16*A Glass IRFY044M 0.040 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY044 IRFY044M IRFY044 IRFY044, O-257AA IRFY044C IRFY044CM IRFY044M

    IRFY044M

    Abstract: No abstract text available
    Text: IRFY044M Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO257AB Metal Package. 10.6 (0.42) 4.6 (0.18) 10.6 (0.42) 3.70 Dia. Nom 1.5(0.53) 16.5 (0.65) 0.8 (0.03) 1 2 3 12.70 (0.50 min) VDSS = 60V ID = 16A RDS(ON) = 0.04Ω Ω 1.0 (0.039)


    Original     		PDF IRFY044M O257AB O257AB O220M) 13-Sep-02 IRFY044M

    IRFY044

    Abstract: SHD226401
    Text: SENSITRON SEMICONDUCTOR SHD226401 TECHNICAL DATA DATA SHEET 581, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ œ œ œ Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY044 Series MAXIMUM RATINGS


    Original     		PDF SHD226401 IRFY044 SHD226401

    IRFY044C

    Abstract: IRFY044CM 91285D
    Text: PD - 91285D POWER MOSFET THRU-HOLE TO-257AA IRFY044C,IRFY044CM 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91285D O-257AA) IRFY044C IRFY044CM IRFY044C IRFY044C, O-257AA IRFY044CM 91285D

    Power MOSFET 50V 20A

    Abstract: IRFY044
    Text: IRFY044 MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 60V 20A Ω 0.035Ω FEATURES 0.89


    Original     		PDF IRFY044 Power MOSFET 50V 20A IRFY044

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD219401 TECHNICAL DATA DATA SHEET 850, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ Hermetic Surface Mount Package œ Fast Switching œ Low RDS on œ Electricly Equivalent to IRFY044 Series


    Original     		PDF SHD219401 IRFY044 SHD219401

    Untitled

    Abstract: No abstract text available
    Text: PD - 94181 POWER MOSFET THRU-HOLE TO-257AA IRFY044,IRFY044M 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044 0.040 Ω 16*A Glass IRFY044M 0.040 Ω 16*A Glass HEXFET® MOSFET technology is the key to International


    Original     		PDF O-257AA) IRFY044 IRFY044M IRFY044 IRFY044, O-257AA

    IRFY044C

    Abstract: IRFY044CM
    Text: Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1285C IRFY044CM IRFY044C IRFY044CM

    IRF044C-C

    Abstract: IRFY004C-A IRFY004C-B IRFY044C IRFY044C-D IRFY044CJTX IRFY044CJXV
    Text: IRFY044C MECHANICAL DATA Dimensions in mm inches 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 FEATURES 0.89 1.14 2.65 2.75 2.54


    Original     		PDF IRFY044C IRFY044C IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV IRFY044CJT IRF044C-C IRFY004C-A IRFY004C-B IRFY044C-D IRFY044CJTX IRFY044CJXV

    IRFY044C

    Abstract: IRFY044CM
    Text: Provisional Data Sheet No. PD 9.1285C IRFY044CM HEXFET POWER MOSFET N-CHANNEL Product Summary 60 Volt, 0.040Ω HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.


    Original     		PDF 1285C IRFY044CM IRFY044C IRFY044CM

    IRFY044

    Abstract: SHD219401
    Text: SENSITRON SEMICONDUCTOR SHD219401 TECHNICAL DATA DATA SHEET 850, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ Hermetic Surface Mount Package œ Fast Switching œ Low RDS on œ Electricly Equivalent to IRFY044 Series


    Original     		PDF SHD219401 IRFY044 SHD219401

    shd226401

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD226401 TECHNICAL DATA DATA SHEET 581, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 60 Volt, 0.035 Ohm, 20A MOSFET œ œ œ œ Isolated Hermetic Metal Package Fast Switching Low RDS on Equivalent to IRFY044 Series MAXIMUM RATINGS


    Original     		PDF SHD226401 IRFY044 150sitron SHD226401 O-257

    Untitled

    Abstract: No abstract text available
    Text: PD - 91285D POWER MOSFET THRU-HOLE TO-257AA IRFY044C,IRFY044CM 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number R DS(on) ID Eyelets IRFY044C 0.040 Ω 16*A Ceramic IRFY044CM 0.040 Ω 16*A Ceramic HEXFET® MOSFET technology is the key to International


    Original     		PDF 91285D O-257AA) IRFY044C IRFY044CM IRFY044C IRFY044C, O-257AA

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    irf5n5210sc

    Abstract: IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS
    Text: PD - 94246A IRHG567110 RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET POWER MOSFET 4# TECHNOLOGY THRU-HOLE MO-036AB Product Summary Part Number IRHG567110 IRHG563110 IRHG567110 IRHG563110 Radiation Level RDS(on) 100K Rads (Si)


    Original     		PDF 4246A IRHG567110 MO-036AB) IRHG563110 MO-036AB O-254AA 22JGQ045SCV irf5n5210sc IRHNA57064SCS IRHM597260 irf5n5210 irhna597160scs irhf7110scs IRHG57110 IRHNA57264SESCS 35CLQ045SCS 12CLQ150SCS

    SHD239608

    Abstract: shd239606
    Text: SENSITRON SEMICONDUCTOR 2000 CATALOG HERMETIC POWER MOSFETs N-CHANNEL, TO-254, TO-257 TYPE NUMBER DRAIN TO SOURCE BREAKDOWN VOLTAGE V (BR)DSS Volts CONTINUOUS DRAIN CURRENT ID MAXIMUM POWER DISSIPATION PD STATIC DRAIN TO SOURCE ON RESISTANCE RDS(on) MAXIMUM


    Original     		PDF O-254, O-257) SHD226413 SHD226401 SHD226402 SHD226403 SHD226404 SHD226405 SHD226406 SHD226407 SHD239608 shd239606

    10RIA10

    Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF
    Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy


    Original     		PDF DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF

    IRHNA57064SCS

    Abstract: IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS
    Text: PD - 94046B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-0.5 IRHNJ597230 200V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHNJ597230 100K Rads (Si) IRHNJ593230 300K Rads (Si) RDS(on) 0.505Ω 0.505Ω ID -8.0A -8.0A SMD-0.5


    Original     		PDF 94046B IRHNJ597230 IRHNJ593230 O-254AA 22JGQ045SCV 22GQ100SCV 25GQ045SCS IRHNA57064SCS IRHNJ597230SCS IRHNJ9130SCS IRHG6110SCS IRHY7434 IRHE57130SCS 8CLJQ045SCV IRHNJ57034SCS irfy9230 35CLQ045SCS

    IRF044C-C

    Abstract: No abstract text available
    Text: nil =Vr= INI SEM E IRFY044C LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS Dim ensions in mm inches 4.70 5.00 10.41 V DSS ID(cont) ^DS(on) 60V 20A 0.035ft FEATURES HERMETICALLY SEALED T 0-220 METAL PACKAGE 2.75 BSC LIGHTWEIGHT T0-220M - Metal Package


    OCR Scan     		PDF IRFY044C 035ft T0-220M IRFY044C IRFY004C-A IRFY004C-B IRF044C-C IRFY044C-D IRFY044CJ IRFY044CJXV

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD 9.1285C International IOR Rectifier HEXFET PO W ER M O S FE T IRFY044CM N-CHANNEL Product Summary 60 Volt, 0.040Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power M O SFET transistors. The effi­


    OCR Scan     		PDF 1285C IRFY044CM 4A55452

    Untitled

    Abstract: No abstract text available
    Text: mi Étti INI SEM E IRFY044 LAB MECHANICAL DATA N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS D im e nsio ns in mm inches 4 .70 5 .00 10.41 1 0.67 0.70 0.90 3.56 Dia. 3.81 V DSS 1 2 ^D(cont) ^DS(on) 60V 20A 0.035ft FEATURES u 2 .54 BSC | 0.89 1.14 2 .65


    OCR Scan     		PDF IRFY044 035ft O-220M

    Untitled

    Abstract: No abstract text available
    Text: International Government and Space HEXFET Power MOSFETs IlC T R e c H ffe r Hermetic Package N & P Channel Part Number b v DSS V RDS(on) (Ohms) lp @ Tr = 25°C <D@ TC = 100°C R thJC Max. Pd @ Case Tc = 25°C Outline (»> (A) (K/W) (W) Number (1) 0.6 17


    OCR Scan     		PDF IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110* N7335 JANTXV2N7335 IRFV064 IRFV360 IRFV460

    irfm9034

    Abstract: No abstract text available
    Text: 1 I n t e r n a t io n a l R e c t if ie r Government and Space Products Pvt Numb« 2 (3) bvdss (Vote) RDS(on) (Ohms) ID« Tc*2T (Amps) 10« TC=100“ (Amps) Pd O Tc«25° (Watts) Fax-onOamand Number Case Styl«, (Cas* (Min») (1) HEXFET Power MOSFETs Hermetic Package, N- and P-Channel


    OCR Scan     		PDF IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50 IRF9130 JANTX2N6804 JANTXV2N6804 IRF9140 irfm9034

    2N7334

    Abstract: irfg9110 H24 SMD
    Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130


    OCR Scan     		PDF IRHE7110 IRHE8110 IRHE7130 IRHE8130 IRHE7230 IRHE8230 IRHE9130 IRHN7054 IRHN8054 IRHN7130 2N7334 irfg9110 H24 SMD