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    Infineon Technologies AG

    Infineon Technologies AG IRHYS6S7234CMSCS

    Transistor MOSFET N-Channel 250V 12A 3-Pin TO-257AA - Bulk (Alt: IRHYS6S7234CMSCS)
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    Infineon Technologies AG IRHY9130CM

    Transistor MOSFET P-Channel 100V 11A 3-Pin TO-257AA - Bulk (Alt: IRHY9130CM)
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    Infineon Technologies AG IRHYS9A3034CM

    Transistor MOSFET N-Channel 60V 30A 3-Pin TO-257AA - Bulk (Alt: IRHYS9A3034CM)
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    Infineon Technologies AG IRHYS67130CSCSA

    Power MOSFET, N Channel, 100 V, 20 A, 42 Milliohms, TO-257AA, 3 Pins, Through Hole - Bulk (Alt: IRHYS67130CSCSA)
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    Infineon Technologies AG IRHY67C30CSCS

    Transistor MOSFET N-Channel 600V 3.4A 3-Pin TO-257AA - Bulk (Alt: IRHY67C30CSCS)
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    IRHY Datasheets (98)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    IRHY3130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY3130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY3230CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY3230CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY4130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY4130CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY4230CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY4230CM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRHY53034CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY53130CM International Rectifier 100V 100kRad JANS Certified Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package. Also available in Radiation Levels up to 1000KRad. Original PDF
    IRHY53130CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY53230CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY53Z30CM International Rectifier 30V, N-CHANNEL R5 TECHNOLOGY Original PDF
    IRHY53Z30CM International Rectifier Original PDF
    IRHY54034CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY54034CM International Rectifier Radiation Hardened Power MOSFET Original PDF
    IRHY54130CM International Rectifier 100V 100kRad JANS Certified Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-257AA package. Also available in Radiation Levels up to 1000KRad. Original PDF
    IRHY54230CM International Rectifier RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Original PDF
    IRHY54Z30CM International Rectifier 30V, N-CHANNEL R5 TECHNOLOGY Original PDF
    IRHY54Z30CM International Rectifier Original PDF

    IRHY Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    IRHY597130CM

    Abstract: IRHY593130CM T0-257AA
    Text: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides


    Original     		O-257AA) IRHY597130CM IRHY597130CM IRHY593130CM 5M-1994. O-257AA. T0-257AA PDF

    IRHY53230CM

    Abstract: IRHY54230CM IRHY57230CM IRHY58230CM
    Text: PD - 93827A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57230CM 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHY57230CM 100K Rads (Si) IRHY53230CM 300K Rads (Si) RDS(on) 0.21Ω 0.21Ω ID 12.5A 12.5A IRHY54230CM 600K Rads (Si)


    Original     		3827A O-257AA) IRHY57230CM IRHY57230CM IRHY53230CM IRHY54230CM IRHY58230CM 1000K MIL-STD-750, MlL-STD-750, PDF

    IRHY53Z30CM

    Abstract: IRHY54Z30CM IRHY57Z30CM IRHY58Z30CM
    Text: PD - 93824A RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57Z30CM 30V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHY57Z30CM 100K Rads (Si) IRHY53Z30CM 300K Rads (Si) RDS(on) 0.03Ω 0.03Ω ID 18A* 18A* IRHY54Z30CM 600K Rads (Si)


    Original     		3824A O-257AA) IRHY57Z30CM IRHY57Z30CM IRHY53Z30CM IRHY54Z30CM IRHY58Z30CM 1000K MIL-STD-750, MlL-STD-750, PDF

    JANSR2N7380

    Abstract: Accelerometers datasheet 8303a IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM
    Text: PD - 91274E IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)


    Original     		91274E IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380 Accelerometers datasheet 8303a PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD-9.1400A International I R Rectifier R EPETITIVE AVALANCHE AND IRHY9130CM IRHY93130CM JANSR2N7382 JANSF2N7382 [REF: MIL'^ channel dv/dt RATED HEXFET TRANSISTOR RAD HARD -100Volt, 0.30Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technol­


    OCR Scan     		-100Volt, PDF

    Untitled

    Abstract: No abstract text available
    Text: International SIRectifier Provisional Data Sheet No. PD-9.1400 IRHY9130CM JANSR2N7382 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR [REF: MIL-PRF-19500/615] P-CHANNEL RAD HARD •100 Volt, 0.30Q, RAO HARD HEXFET International Rectifier’s P-Channel RAD HARD technology


    OCR Scan     		IRHY9130CM JANSR2N7382 MIL-PRF-19500/615] Liguria49 PDF

    2N7594

    Abstract: PD-97193A
    Text: PD-97193A 2N7594T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67234CM Radiation Level 100K Rads (Si) IRHYS63234CM 300K Rads (Si) RDS(on) I D 0.22Ω 12A 0.22Ω 12A


    Original     		PD-97193A 2N7594T3 O-257AA) IRHYS67234CM IRHYS63234CM 90MeV/ 5M-1994. O-257AA. 2N7594 PD-97193A PDF

    95818

    Abstract: No abstract text available
    Text: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)


    Original     		O-257AA) IRHYB67230CM IRHYB63230CM IRHYB64230CM IRHYB68230CM 1000K 90MeV/ 5M-1994. O-257AA. 95818 PDF

    2N7588T3

    Abstract: 2N7588 isd 1710
    Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω


    Original     		PD-96986A 2N7588T3 O-257AA) IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA. 2N7588 isd 1710 PDF

    JANSR2N7380

    Abstract: IRHY3130CM IRHY4130CM IRHY7130CM IRHY8130CM
    Text: PD - 91274D IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)


    Original     		91274D IRHY7130CM JANSR2N7380 MIL-PRF-19500/614 O-257AA) IRHY7130CM IRHY3130CM IRHY4130CM IRHY8130CM 1000K JANSR2N7380 PDF

    IRHY57230CMSE

    Abstract: No abstract text available
    Text: PD - 93822 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57230CMSE 200V, N-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A TO-257AA International Rectifier’s R5TM technology provides


    Original     		O-257AA) IRHY57230CMSE IRHY57230CMSE O-257AA MIL-STD-750, MlL-STD-750, PDF

    irf 343

    Abstract: IRHYB63130CM IRHYB67130CM isd 1710
    Text: PD-95841A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 20A* 0.042Ω Low-Ohmic


    Original     		PD-95841A O-257AA) IRHYB67130CM IRHYB67130CM IRHYB63130CM O-257AA 90MeV/ 5M-1994. O-257AA. irf 343 isd 1710 PDF

    T0257AA

    Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
    Text: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number


    Original     		94318C IRHY57133CMSE JANSR2N7488T3 O-257AA) MIL-PRF-19500/705 5M-1994. O-257AA. T0257AA IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω


    Original     		PD-96986A 2N7588T3 O-257AA) IRHYS67130CM IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96899 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597Z30CM 30V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597Z30CM 100K Rads (Si) 0.072Ω IRHYS593Z30CM 300K Rads (Si) 0.072Ω ID -20A* -20A*


    Original     		PD-96899 O-257AA) IRHYS597Z30CM IRHYS597Z30CM IRHYS593Z30CM O-257AA 5M-1994. O-257AA O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96911 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087Ω IRHYS593034CM 300K Rads (Si) 0.087Ω ID -20A -20A


    Original     		PD-96911 O-257AA) IRHYS597034CM IRHYS597034CM IRHYS593034CM O-257AA 5M-1994. O-257AA O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides


    Original     		PD-95841B O-257AA) IRHYB67130CM IRHYB63130CM 90MeV/ 5M-1994. O-257AA. PDF

    MOSFET 800V 10A

    Abstract: IRHY7G30CMSE
    Text: PD - 93973C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		93973C O-257AA) IRHY7G30CMSE IRHY7G30CMSE MIL-STD-750, MlL-STD-750, O-257AA MOSFET 800V 10A PDF

    IRHYB63134CM

    Abstract: IRHYB67134CM
    Text: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides


    Original     		PD-96997 O-257AA) IRHYB67134CM IRHYB67134CM IRHYB63134CM 90MeV/ 5M-1994. O-257AA. PDF

    95837

    Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
    Text: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides


    Original     		PD-95837 O-257AA) IRHY67C30CM IRHY67C30CM IRHY63C30CM 90MeV/ 5M-1994. O-257AA. 95837 PD-95837 RG 2006 10A 600V PDF

    IRHYS63130CM

    Abstract: IRHYS67130CM
    Text: PD-96986 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYS63130CM 300K Rads (Si) 20A* 0.042Ω International Rectifier’s R6 TM technology provides


    Original     		PD-96986 O-257AA) IRHYS67130CM IRHYS67130CM IRHYS63130CM 90MeV/ 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95818B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PD-95818B O-257AA) IRHYB67230CM IRHYB63230CM 90MeV/ 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96925 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYS63230CM 300K Rads (Si) 16A 0.13Ω International Rectifier’s R6 TM technology provides


    Original     		PD-96925 O-257AA) IRHYS67230CM IRHYS63230CM 90MeV/ 5M-1994. O-257AA. PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 93973 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY7G30CMSE 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY7G30CMSE 100K Rads (Si) 15Ω ID 1.2A International Rectifier’s RADHardTM HEXFET® MOSFET


    Original     		O-257AA) IRHY7G30CMSE PDF