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    FDPF Price and Stock

    Rochester Electronics LLC FDPF13N50FT

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey FDPF13N50FT Bulk 26,548 293
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    • 1000 $1.02
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    Rochester Electronics LLC FDPF5N50UT

    POWER FIELD-EFFECT TRANSISTOR, 4
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    DigiKey FDPF5N50UT Bulk 17,120 470
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    • 1000 $0.64
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    Flip Electronics FDPF5N50UT

    N-CHANNEL UNIFETTM ULTRA FRFETTM
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    DigiKey FDPF5N50UT Tube 7,077 1,000
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    FDPF5N50UT Tube 7,077 1,000
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    Flip Electronics FDPF51N25YDTU

    N-CHANNEL UNIFETTM MOSFET 250V,
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    DigiKey FDPF51N25YDTU Tube 3,200 500
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    onsemi FDPF12N50NZ

    MOSFET N-CH 500V 11.5A TO220F
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    DigiKey FDPF12N50NZ Tube 1,081 1
    • 1 $2.76
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    Arrow Electronics FDPF12N50NZ 350 1
    • 1 $1.1538
    • 10 $1.067
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    • 1000 $0.7601
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    Rochester Electronics FDPF12N50NZ 1,980 1
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    • 100 $0.9325
    • 1000 $0.8432
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    Find more FDPF price and stock on Findchips.com

    FDPF Datasheets (105)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDPF035N06B_F152 Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 88A TO-220F Original PDF
    FDPF041N06BL1 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 77A TO-220F Original PDF
    FDPF045N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 67A TO-220-3 Original PDF
    FDPF085N10A Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A TO-220F Original PDF
    FDPF10N50FT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 9A TO-220F Original PDF
    FDPF10N50UT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO-220F-3 Original PDF
    FDPF10N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO-220F Original PDF
    FDPF10N60ZUT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220F-3 Original PDF
    FDPF12N35 Fairchild Semiconductor 350V N-Channel MOSFET Original PDF
    FDPF12N35 Fairchild Semiconductor 350V N-Channel MOSFET Original PDF
    FDPF12N50 Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.65 Ohm Original PDF
    FDPF12N50FT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF
    FDPF12N50FT Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.7 Ohm Original PDF
    FDPF12N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220FP Original PDF
    FDPF12N50NZT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 11.5A TO-220F Original PDF
    FDPF12N50T Fairchild Semiconductor 500V N-Channel MOSFET; Package: TO-220F; No of Pins: 3; Container: Rail Original PDF
    FDPF12N50UT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220F-3 Original PDF
    FDPF12N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO-220F-3 Original PDF
    FDPF13N50FT Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO-220F Original PDF
    FDPF13N50FT Fairchild Semiconductor N-Channel MOSFET 500V, 12A, 0.54 Ohm Original PDF

    FDPF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDPF4N60NZ

    Abstract: No abstract text available
    Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP4N60NZ FDPF4N60NZ FDPF4N60NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF035N06B N-Channel PowerTrench MOSFET 60 V, 88 A, 3.5 mΩ Features Description • RDS on = 2.91 mΩ ( Typ.) @ VGS = 10 V, ID = 88 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDPF035N06B

    FDPF12N50T

    Abstract: FDP12N50
    Text: UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS on = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP12N50 FDPF12N50T FDPF12N50T

    FDP7N50

    Abstract: FDPF7N50
    Text: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDP7N50/FDPF7N50 FDP7N50/FDPF7N50 FDP7N50 FDPF7N50

    FDPF*10N60NZ

    Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power
    Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power

    FDP7N60

    Abstract: FDPF7N60NZ fdpf7n60 FDP7N60NZ FDPF 480v
    Text: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP7N60NZ FDPF7N60NZ FDP7N60 FDPF7N60NZ fdpf7n60 FDPF 480v

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50F FDPF12N50F

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS on = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP15N65 FDPF15N65 FDPF15N65

    Untitled

    Abstract: No abstract text available
    Text: FDP5N50NZ / FDPF5N50NZ N-Channel UniFETTM II MOSFET 500 V, 4.5 A, 1.5 Ω Features Description • R DS on = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP5N50NZ FDPF5N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF4N60NZ N-Channel UniFETTM II MOSFET 600 V, 3.8 A, 2.5 Ω Features Description • RDS on = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest


    Original     		PDF FDPF4N60NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Ω Features Description • RDS on = 1.15 Ω (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDPF5N50T

    Untitled

    Abstract: No abstract text available
    Text: FDPF3N50NZ N-Channel UniFETTM II MOSFET 500 V, 3 A, 2.5  Features Description • RDS on = 2.1  (Typ.) @ VGS = 10 V, ID = 1.5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDPF3N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDPF190N15A N-Channel PowerTrench MOSFET 150 V, 27.4 A, 19 mΩ Features Description • RDS on = 14.7 mΩ (Typ.) @ VGS = 10 V, ID = 27.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining


    Original     		PDF FDPF190N15A O-220F

    Untitled

    Abstract: No abstract text available
    Text: FDPF16N50UT N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 15 A, 480 mΩ Features Description • RDS on = 370 mΩ ( Typ.) @ VGS = 10 V, ID = 7.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This


    Original     		PDF FDPF16N50UT 50nsec 200nsec

    Untitled

    Abstract: No abstract text available
    Text: FDP20N50 / FDPF20N50 / FDPF20N50T N-Channel UniFETTM MOSFET 500 V, 20 A, 230 mΩ Features Description • RDS on = 200 mΩ (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDP20N50 FDPF20N50 FDPF20N50T

    Untitled

    Abstract: No abstract text available
    Text: FDPF33N25T N-Channel UniFETTM MOSFET 250 V, 33 A, 94 mΩ Features Description • RDS on = 94 mΩ (Max.) @ VGS = 10 V, ID = 16.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDPF33N25T

    Untitled

    Abstract: No abstract text available
    Text: FDPF3860T N-Channel PowerTrench MOSFET 100 V, 20 A, 38.2 mΩ Features Description • RDS on = 29.1 mΩ (Typ.) @ VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		PDF FDPF3860T O-220F

    Untitled

    Abstract: No abstract text available
    Text: FDPF085N10A N-Channel PowerTrench MOSFET 100V, 40A, 8.5mW Features General Description • RDS on = 6.5mW ( Typ.)@ VGS = 10V, ID = 40A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF FDPF085N10A FDPF085N10A

    FDP7N50U

    Abstract: FDPF7N50U
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDP7N50U FDPF7N50U

    Untitled

    Abstract: No abstract text available
    Text: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP6N60ZU FDPF6N60ZUT

    Untitled

    Abstract: No abstract text available
    Text: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60ZU FDPF10N60ZUT

    FDPF*12n50ut

    Abstract: FDPF12N50UT
    Text: TM Ultra FRFET FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50U FDPF12N50UT FDPF12N50UT FDPF*12n50ut

    FDPF12N35

    Abstract: No abstract text available
    Text: UniFET FDPF12N35 350V N-Channel MOSFET Features Description • 7.5A, 350V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		PDF FDPF12N35 O-220F FDPF12N35