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    Abstract: No abstract text available
    Text: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A • Low gate charge ( Typ. 14.5nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP6N60ZU FDPF6N60ZUT

    FDPF6N60ZUT

    Abstract: No abstract text available
    Text: UniFE TM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP6N60ZU FDPF6N60ZUT FDPF6N60ZUT

    FDPF6N60ZUT

    Abstract: No abstract text available
    Text: UniFETTM FDP6N60ZU / FDPF6N60ZUT N-Channel MOSFET, FRFET 600V, 4.5A, 2Ω Features Description • RDS on = 1.7Ω ( Typ.) @ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP6N60ZU FDPF6N60ZUT FDPF6N60ZUT