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    MOSFET N-CH 500V 8A TO220-3
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    FDP8N50NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP8N50NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V TO-220AB-3 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state


    Original     		PDF FDP8N50NZU FDPF8N50NZU 50nsec

    Untitled

    Abstract: No abstract text available
    Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF

    Untitled

    Abstract: No abstract text available
    Text: UniFET FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 4A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZT

    Untitled

    Abstract: No abstract text available
    Text: UniFET FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description • RDS on = 0.77 ( Typ.) @ VGS = 10V, ID = 4A • Low Gate Charge ( Typ. 14nC) This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    Untitled

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP8N50NZ FDPF8N50NZ

    FDPF8N50NZF

    Abstract: No abstract text available
    Text: UniFET-II FDP8N50NZF / FDPF8N50NZF tm N-Channel MOSFET 500V, 7A, 1 Features Description • RDS on = 0.85 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF FDPF8N50NZF

    Untitled

    Abstract: No abstract text available
    Text: UniFET-II FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description • RDS on = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS


    Original     		PDF FDP8N50NZU FDPF8N50NZU

    FDPF8N50NZ

    Abstract: FDP8N50NZ
    Text: UniFET FDP8N50NZ / FDPF8N50NZ tm N-Channel MOSFET 500V, 8A, 0.85 Features Description • RDS on = 0.77 ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZ FDPF8N50NZ

    FDP8N50NZ

    Abstract: No abstract text available
    Text: UniFET FDP8N50NZ / FDPF8N50NZT N-Channel MOSFET 500V, 8A, 0.85Ω Features Description • RDS on = 0.77Ω ( Typ.) @ VGS = 10V, ID = 4A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZ FDPF8N50NZT

    FDPF8N50NZU

    Abstract: BVDSS 65AVDD
    Text: UniFET-II FDP8N50NZU / FDPF8N50NZU tm N-Channel MOSFET 500V, 6.5A, 1.2 Features Description • RDS on = 1.0 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are prod uced using F airchild's pro prietary, planar str ipe, DMOS


    Original     		PDF FDP8N50NZU FDPF8N50NZU FDPF8N50NZU BVDSS 65AVDD

    FDPF8N50

    Abstract: FDPF8N50NZU FDP8N50NZU
    Text: FDP8N50NZU / FDPF8N50NZU N-Channel UniFETTM II Ultra FRFETTM MOSFET 500 V, 6.5 A, 1.2 Ω Features Description • R UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state


    Original     		PDF FDP8N50NZU FDPF8N50NZU FDPF8N50NZU FDPF8N50

    fdp8n50nz

    Abstract: No abstract text available
    Text: FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m Features Description • RDS on = 770 m (Typ.) @ VGS = 10 V, ID = 4 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP8N50NZ/ FDPF8N50NZ FDP8N50NZ FDPF8N50NZ

    FDPF8N50

    Abstract: No abstract text available
    Text: UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS on = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS


    Original     		PDF FDP8N50NZF FDPF8N50NZF FDPF8N50NZF FDPF8N50