Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    FDP12N50F Search Results

    FDP12N50F Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP12N50F Fairchild Semiconductor N-Channel MOSFET 500V, 11.5A, 0.7 Ohm Original PDF

    FDP12N50F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50F FDPF12N50F

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP12N50F / FDPF12N50F tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50F FDPF12N50F

    FDPF12N50FT

    Abstract: FDP12N50F FDP12N50
    Text: UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS on = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP12N50F FDPF12N50FT FDPF12N50FT FDP12N50

    Untitled

    Abstract: No abstract text available
    Text: FDPF12N50FT N-Channel UniFETTM FRFET MOSFET 500 V, 11.5 A, 700 m Features Description • RDS on = 650 m (Typ.) @ VGS = 10 V, ID = 6 A UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDPF12N50FT FDPF12N50FT 100nsec 200nsec