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    FDP7N50 Price and Stock

    onsemi FDP7N50

    MOSFET N-CH 500V 7A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP7N50 Tube 1,000
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    • 1000 $0.64209
    • 10000 $0.64209
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    Avnet Americas FDP7N50 Tube 1,163
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    • 10000 $0.48053
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    Newark FDP7N50 Bulk 1,000
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    • 1000 $0.791
    • 10000 $0.619
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    Flip Electronics FDP7N50 3,000
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    Flip Electronics FDP7N50

    N-CHANNEL UNIFET MOSFET 500V, 7A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP7N50 Tube 1,000
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    • 1000 $0.58
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    Fairchild Semiconductor Corporation FDP7N50

    Power Field-Effect Transistor, 7A, 500V, 0.9ohm, N-Channel, MOSFET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics FDP7N50 343 1
    • 1 $0.6943
    • 10 $0.6943
    • 100 $0.6526
    • 1000 $0.5902
    • 10000 $0.5902
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    FDP7N50 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP7N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FDP7N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FDP7N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FDP7N50U Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

    FDP7N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDP7N50

    Abstract: FDPF7N50
    Text: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDP7N50/FDPF7N50 FDP7N50/FDPF7N50 FDP7N50 FDPF7N50

    FDP7N50U

    Abstract: FDPF7N50U
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDP7N50U FDPF7N50U

    Untitled

    Abstract: No abstract text available
    Text: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP7N50

    FDPF7N50F

    Abstract: FDP7N50F
    Text: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP7N50F FDPF7N50F FDPF7N50F

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V •


    Original     		PDF FDP7N50/FDPF7N50

    FDPF7N50U

    Abstract: No abstract text available
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDP7N50U/FDPF7N50U FDPF7N50U

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V


    Original     		PDF FDP7N50U/FDPF7N50U

    FDPF7N50U

    Abstract: No abstract text available
    Text: UniFET TM FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDP7N50U/FDPF7N50U FDPF7N50U

    Untitled

    Abstract: No abstract text available
    Text: FDP7N50 N-Channel UniFETTM MOSFET 500 V, 7 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3.5 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDP7N50 FDP7N50

    500V 100A thyristors

    Abstract: 7A, 100v fast recovery diode fdpf7n50 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP7N50
    Text: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDP7N50/FDPF7N50 FDP7N50/FDPF7N50 500V 100A thyristors 7A, 100v fast recovery diode fdpf7n50 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 40v N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V p channel mosfet 100v FDP7N50

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 3A • Low gate charge ( Typ. 15nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP7N50F FDPF7N50F FDPF7N50F

    FDPF7N50U

    Abstract: FDP7N50U
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDPF7N50U FDP7N50U

    FDP7N50

    Abstract: FDPF7N50
    Text: UniFET FDP7N50/FDPF7N50 TM 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDP7N50/FDPF7N50 FDP7N50 FDPF7N50

    FDP7N50

    Abstract: FDPF7N50
    Text: UniFET TM FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description • 7A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDP7N50/FDPF7N50 FDP7N50 FDPF7N50

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


    Original     		PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    interleaved Boost PFC

    Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
    Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is


    Original     		PDF AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50