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onsemi FDP10N60NZ MOSFET N-CH 600V 10A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP10N60NZ	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FDP10N60NZ	Bulk			1,000	1 - 10 - 100 - 1000 $1.44 10000 $1.13	Buy Now
Rochester Electronics	FDP10N60NZ		10,506		1	1 $1.26 10 $1.26 100 $1.18 1000 $1.07 10000 $1.07	Buy Now
Rochester Electronics LLC FDP10N60NZ POWER FIELD-EFFECT TRANSISTOR, 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDP10N60NZ	Bulk			229	1 - 10 - 100 - 1000 $1.31 10000 $1.31	Buy Now
Fairchild Semiconductor Corporation FDP10N60NZ FDP10N60NZ - Power Field-Effect Transistor, 10A, 600V, 0.75ohm, N-Channel, MOSFET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FDP10N60NZ		21,723		1	1 $1.26 10 $1.26 100 $1.18 1000 $1.07 10000 $1.07	Buy Now

FDP10N60NZ Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDP10N60NZ		Fairchild Semiconductor	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO-220		Original	PDF

FDP10N60NZ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
FDPF*10N60NZ Abstract: FDPF10N60NZ FDP10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60NZ fdpf10n60 FDPF10N60N fdp10 FDPF fdpf10n6 220 to 110 power	PDF
Untitled Abstract: No abstract text available Text: UniFET-II TM FDP10N60NZ / FDPF10N60NZ N-Channel MOSFET 600V, 10A, 0.75 Features Description • RDS on = 0.64 ( Typ.)@ VGS = 10V, ID = 5A • Low Gate Charge ( Typ. 23nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP10N60NZ FDPF10N60NZ	PDF
FDPF10N60NZ Abstract: FDPF*10N60NZ FDP10N60NZ FDPF10N60 600v 10A ultra fast recovery diode Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 m Features Description • RDS on = 640 m (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and	Original	FDP10N60NZ FDPF10N60NZ FDPF10N60NZ FDPF*10N60NZ FDPF10N60 600v 10A ultra fast recovery diode	PDF
Untitled Abstract: No abstract text available Text: FDP10N60NZ / FDPF10N60NZ N-Channel UniFETTM II MOSFET 600 V, 10 A, 750 mΩ Features Description • RDS on = 640 mΩ (Typ.) @ VGS = 10 V, ID = 5 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS	Original	FDP10N60NZ FDPF10N60NZ	PDF
FDPF*10N60NZ Abstract: FDPF10n60 Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDPF10n60	PDF
FDPF*10N60NZ Abstract: FDP10N60NZ FDPF10N60NZ switched mode power Text: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	FDP5N60NZ FDPF5N60NZ FDPF*10N60NZ FDP10N60NZ FDPF10N60NZ switched mode power	PDF