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    Abstract: No abstract text available
    Text: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A • Low gate charge ( Typ. 31nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60ZU FDPF10N60ZUT

    FDPF10N60ZUT

    Abstract: mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET
    Text: TM UniFET FDP10N60ZU / FDPF10N60ZUT tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60ZU FDPF10N60ZUT FDPF10N60ZUT mosfet 10a 600v 3M-J20 N-Channel 600V MOSFET

    fdpf10n60

    Abstract: No abstract text available
    Text: UniFET FDP10N60ZU / FDPF10N60ZUT TM tm N-Channel MOSFET, FRFET 600V, 9A, 0.8Ω Features Description • RDS on = 0.65Ω ( Typ.)@ VGS = 10V, ID = 4.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP10N60ZU/FDPF10N60ZUT FDP10N60ZU FDPF10N60ZUT fdpf10n60