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    onsemi FDP7N60NZ

    MOSFET N-CH 600V 6.5A TO220-3
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    Quest Components FDP7N60NZ 592
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    Fairchild Semiconductor Corporation FDP7N60NZ

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    Bristol Electronics FDP7N60NZ 220
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    FDP7N60NZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDP7N60NZ Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 6.5A TO-220 Original PDF

    FDP7N60NZ Datasheets Context Search

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    FDP7N60

    Abstract: FDPF7N60NZ fdpf7n60 FDP7N60NZ FDPF 480v
    Text: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP7N60NZ FDPF7N60NZ FDP7N60 FDPF7N60NZ fdpf7n60 FDPF 480v

    Untitled

    Abstract: No abstract text available
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP7N60NZ FDPF7N60NZ

    FDP7N60

    Abstract: FDP7N60NZ
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25  Features Description • RDS on = 1.05  (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		PDF FDP7N60NZ FDPF7N60NZ FDPF7N60NZ FDP7N60

    Untitled

    Abstract: No abstract text available
    Text: FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25 Ω Features Description • RDS on = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		PDF FDP7N60NZ FDPF7N60NZ

    FDP7N60NZ

    Abstract: FDPF7N60NZ
    Text: UniFET-II TM FDP7N60NZ / FDPF7N60NZ N-Channel MOSFET 600V, 6.5A, 1.25 Features Description • RDS on = 1.05 ( Typ.)@ VGS = 10V, ID = 3.25A • Low gate charge ( Typ. 13nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDP7N60NZ FDPF7N60NZ FDPF7N60NZ