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    Banner Engineering Corp EA5R900PIXMODQ-91551

    Ez-Array Receiver:900Mm (35.4 Inch); Range 400Mm- 4M;input:12-30V Dc; Outputs:2 Solid Sate Pnp 2 Analog 4-20Ma Eia-4; 8-Pin Euro Style Quick Disconnect |Banner Engineering EA5R900PIXMODQ-91551
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    Newark EA5R900PIXMODQ-91551 Bulk 1
    • 1 $2481
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    DQ91 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View


    Original     		PDF MB82DPS02183B MB82D01160 MB82D01161, 16M-bit 128Mb

    ACT-D16M96S

    Abstract: BSA1 BS-B1
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


    Original     		PDF ACT-D16M96S 16MegaBit 50-MHz 192-cycle SCD3370 BSA1 BS-B1

    F0110

    Abstract: 004C2000
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •


    Original     		PDF MB82D01161-85/-85L/-90/90L 576-WORD MB82D01161 16-bit 16bit 90nany F0110 F0110 004C2000

    EDI4164MEV50SM

    Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
    Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns


    Original     		PDF EDI4164MEV-RP 4Mx16 EDI4164MEV50SM EDI4164MEV60SM EDI4164MEV70SM EDI4164MEV50SI EDI4164MEV60SI EDI4164MEV70SI EDI4164MEV50SM EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI

    71WS256NC0BAIAU

    Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
    Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics


    Original     		PDF S71WS512Nx0/S71WS256Nx0 32M/16M 128/64Megabit 16-Bit) 54MHz S71WS S71WS512/256Nx0 S71WS512Nx0/S71WS256Nx0 71WS256NC0BAIAU cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002

    256mb ddr333 200 pin

    Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
    Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 128Mb: DDR333 MT46V32M4 MT46V16M8 MT46V8M16 256Mb: 256mb ddr333 200 pin A11 MARKING CODE mark DM 8M16 DDR200 DDR266 MT46V16M8 MT46V32M4 MT46V8M16

    Untitled

    Abstract: No abstract text available
    Text: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.


    Original     		PDF UG34C322 72Pin 24-pin 72pin) 1000mil) Re-Tek-265

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX

    Untitled

    Abstract: No abstract text available
    Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION  Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with


    Original     		PDF WED9LC6816V 256Kx32 SSRAM/4Mx32 TMS320C6000 WED9LC6816V 4Mx32 4Mx16 TMS320C6201 TMS320C6201

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    Untitled

    Abstract: No abstract text available
    Text: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,


    Original     		PDF IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 Ind10TQI IS61NLF25618-10TQI 128Kx32 IS61NLF12832-9TQ

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability


    OCR Scan     		PDF STI368003 STI368003-60 STI368003-70 110ns 130ns 72-PIN STI368003 24pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit


    OCR Scan     		PDF STI721005D1 168-PIN -60VG -70VG 110ns 130ns STI721005D1-xxVG 44-pin 20-pin

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		PDF HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: IBM041841RLAA IBM043641RLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Outputs • CMOS Technolgy • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with


    OCR Scan     		PDF IBM041841RLAA IBM043641RLAA GA14-4667-01

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


    OCR Scan     		PDF 486/Pentium 7ns/12ns/17ns 67MHz 486/Pent 00DbSS3 1DH02-22-MAY95 HY67V18100/101 HY67V18100C

    Untitled

    Abstract: No abstract text available
    Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.


    OCR Scan     		PDF MB98B7514 MB814400AL MB81C1000AL 88-pin 18-bit 36-bit MB98B7514-80 CRD-88P-M01)

    Untitled

    Abstract: No abstract text available
    Text: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A


    OCR Scan     		PDF MB85346A-60/-70/-80 MB85346A MB814400A MB81C1000A 72-pad MSS-72P-P11

    MB85323A-70

    Abstract: No abstract text available
    Text: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A


    OCR Scan     		PDF MB85323A-60/-70/-80 MB85323A MB814400A MB81C1000A a72-pad MSS-72P-P37 MB85323A-70

    GS840NBT36PT

    Abstract: R33V TI r33v
    Text: Preliminary - April 1998 ¡tl TUUNOIOCV 2.5V or 3.3V I/O 143/133/117/100 GS840NBT36PT F eatures 3.3V +\Q%/-5% Core power supply, 2.5V or 3.3V I/O supply Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either


    OCR Scan     		PDF GS840NBT36PT 10S3D4S GS840NBT36PT R33V TI r33v

    ite 8892

    Abstract: MB8532 MB85323A-70
    Text: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four


    OCR Scan     		PDF 5323A MB85323-A MB814400A MB81C1000A MB85323A 72-pad MSS-72P-P37 ite 8892 MB8532 MB85323A-70

    junction temperature v850

    Abstract: No abstract text available
    Text: Preliminary - April 1998 ¡il T t d l N O L O C V 2.5V or 3.3V I/O 117/100/90/50 GS840NBT18FT F eatures Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either pipeline mode for very high frequency operation (117MHz or


    OCR Scan     		PDF 100-lead junction temperature v850

    Untitled

    Abstract: No abstract text available
    Text: ¡il TU4IHDLDCV GS82032Q/T 138/133/117/100/66,3.3V gs82032Q r C A li V U H H \ À 0 0 O fc P U l O l Features • • • • • • • • • • Single 3.3V +10%/-5% power supply High frequency operation: 138MHz Fast access time: 4ns Clock to Q FT mode pin for either flow-thru or pipeline operation


    OCR Scan     		PDF gs82032Q 80-138MHz 66MHzfFH GS82032Q/T 138MHz GS82032 64Kx32