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    256MB Search Results

    256MB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    256MBDDRSDRAM Samsung Electronics DDR SDRAM Specification Version 0.3 Original PDF
    SF Impression Pixel

    256MB Price and Stock

    Abracon Corporation ADCR-S02R7SA256MB

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    Abracon Corporation ADCR-T02R7SA256MB

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    Abracon Corporation ADCR-S03R0SA256MB

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    Prolabs Ltd MEM-CF-256MB-C

    Cisco MEM-CF-256MB Compatible Fa
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    iWave Systems Technologies Pvt Ltd IW-G18M-SM1S-3D256M-N256M-BI

    I.MX 6ULL SODIMM SOM
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    256MB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 200PIN DDR2 400 SO-DIMM 256MB With 32Mx16 CL3 TS32MSQ64V4M Description Placement The TS32MSQ64V4M is a 32M x 64bits DDR2-400 SO-DIMM. The TS32MSQ64V4M consists of 4pcs 32Mx16its DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed


    Original     		PDF 200PIN 256MB 32Mx16 TS32MSQ64V4M TS32MSQ64V4M 64bits DDR2-400 32Mx16its 200-pin

    Untitled

    Abstract: No abstract text available
    Text: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board


    Original     		PDF 214PIN 256MB 32Mx16 TS32MMQ64V5M TS32MMQ64V5M 64bits DDR2-533 32Mx16bits

    Untitled

    Abstract: No abstract text available
    Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs


    Original     		PDF 144PIN PC133 256MB 16MX16 TS32MSS64V6G 32Mx64 TS32MSS64V6G JEP-108E

    s3c2440 pin

    Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
    Text: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)


    Original     		PDF Mini2440-I S3C2440A ARM920T 64Mbyte 32MB/128MB 128Mbyte 256Mbyte 12MHz 200MHz 32768Hz s3c2440 pin s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP EINT20

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A

    M366S0924ETS-C7A

    Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
    Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002


    Original     		PDF 128MB, 256MB 168pin 128Mb 62/72-bit M366S0924ETS-C7A M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A

    K4S560832E

    Abstract: K4S561632E
    Text: 128MB, 256MB, 512MB Unbuffered SODIMM SDRAM SDRAM Unbuffered SODIMM 144pin Unbuffered SODIMM based on 256Mb E-die 64-bit Non ECC Revision 1.2 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 February 2004


    Original     		PDF 128MB, 256MB, 512MB 144pin 256Mb 64-bit K4S560832E K4S561632E

    DDR2-667

    Abstract: PC2-5300 SSTL-18
    Text: NT256T64UH4A1FY 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM • Performance:


    Original     		PDF NT256T64UH4A1FY 256MB: 240pin 32Mx16 240-pin 32Mx64 84-ball DDR2-667 PC2-5300 SSTL-18

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


    Original     		PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    GDDR

    Abstract: K4D553238E-JC33 k4d553238e-jc40
    Text: 256M GDDR SDRAM K4D553238E-JC 256Mbit GDDR SDRAM 2M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL 144-Ball FBGA Revision 1.3 August 2003 Samsung Electronics reserves the right to change products or specification without notice.


    Original     		PDF K4D553238E-JC 256Mbit 32Bit 144-Ball K4D553238E-JC33/36 15tCK 14tCK 10tCK GDDR K4D553238E-JC33 k4d553238e-jc40

    DDR2-400

    Abstract: DDR2-533 K4T56043QF K4T56083QF
    Text: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information


    Original     		PDF 256MB, 512MB, 240pin 256Mb 72-bit M393T3253FG0-CD5/CC 256MB 32Mx72 DDR2-400 DDR2-533 K4T56043QF K4T56083QF

    M378T2953CZ3

    Abstract: 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108
    Text: 256MB, 512MB, 1GB Unbuffered DIMMs DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 512Mb C-die 64/72-bit Non-ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 256MB, 512MB, 240pin 512Mb 64/72-bit 32Mx64 M378T3354CZ3 M378T3354CZ0 K4T51163QC M378T2953CZ3 1GB DDR2 4 banks DDR2 SDRAM ECC dm 533 M378T6553CZ0 K4T5108

    DDR400

    Abstract: K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC
    Text: 256MB, 512MB, 1GB Registered DIMM DDR SDRAM DDR SDRAM Registered Module DDR400 Module 60FBGA 184pin Registered Module based on 256Mb E-die (x4, x8) with 1,200mil Height Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB, 1GB Registered DIMM DDR SDRAM


    Original     		PDF 256MB, 512MB, DDR400 60FBGA) 184pin 256Mb 200mil K4H560838E M312L3223EG0-CCC M312L6420EG0-CCC

    K4H560838E

    Abstract: DDR333
    Text: 256MB, 512MB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 Rev. 1.1 August. 2003 256MB, 512MB Unbuffered DIMM DDR SDRAM Revision History Revision 1.0 April, 2003


    Original     		PDF 256MB, 512MB 184pin 256Mb 64/72-bit K4H560838E DDR333

    AY-133

    Abstract: BA1U15 mt18lsdt3272ag10 168-PIN MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B
    Text: 128MB x72, ECC, SR , 256MB (x72, ECC, DR) 168-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT9LSDT1672A(I) – 128MB MT18LSDT3272A(I) – 256MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules Features • •


    Original     		PDF 128MB 256MB 168-PIN MT9LSDT1672A MT18LSDT3272A PC100- PC133-compliant AY-133 BA1U15 mt18lsdt3272ag10 MT9LSDT1672AG-13E MT48LC16M8A2TG 168-pin sdram mt9lsdt1672g-133b1 MT9LSDT1672G-133B

    M368L6523DUS

    Abstract: L2923D
    Text: 256MB, 512MB, 1GB Unbuffered DIMM DDR SDRAM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 256MB, 512MB, 184pin 512Mb 64/72-bit 64Mx8 K4H510838D-U* M368L6523DUS L2923D

    k4h561638f

    Abstract: DDR266 DDR333 ECC SODIMM
    Text: DDR SDRAM 128MB, 256MB SODIMM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit Non ECC / ECC Revision 1.1 August, 2003 Rev. 1.1 August 2003 128MB, 256MB SODIMM DDR SDRAM Revision History Revision 1.0 (June 2003) - First release


    Original     		PDF 128MB, 256MB 200pin 72-bit k4h561638f DDR266 DDR333 ECC SODIMM

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    MT48LC8M32LFB5

    Abstract: D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48H8M32LF MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g
    Text: 256Mb: x32 Mobile SDRAM Features Mobile SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 Meg x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/mobile Features • • • • • • • • • • • •


    Original     		PDF 256Mb: MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF 90-ball 09005aef80d460f2/Source: 09005aef80cd8d41 256Mb MT48LC8M32LFB5 D9CDF MT48H8M32LFB5-75 IT mt48h8m32lff5-8 MT48H8M32LFB5-75 MT48V8M32LFB5-10 MT48LC8M32LFB5-8 stop mt48h8m32lfb5 rev g

    256mb ddr333 200 pin

    Abstract: DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D
    Text: 256Mb DDR SDRAM Key Features • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe DQS • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition


    Original     		PDF 256Mb 8K/64ms 256mb ddr333 200 pin DDR266 DDR266A DDR266B DDR333 K4H560438D-GC K4H561638D

    DDR200

    Abstract: DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B
    Text: IBMN625404GT3B IBMN625804GT3B 256Mb Double Data Rate Synchronous DRAM Preliminary Features CAS Latency and Frequency CAS Latency Maximum Operating Frequency MHz * DDR266A (7N) DDR266B (75N) DDR200 (8N) 133 143 100 133 100 125 2 2.5 * Values are nominal (exact tCK should be used).


    Original     		PDF IBMN625404GT3B IBMN625804GT3B 256Mb DDR266A DDR266B DDR200 29L0011 E36997B DDR200 DDR266A DDR266B IBMN62540 IBMN625404GT3B IBMN62580 IBMN625804GT3B

    MVME2434

    Abstract: MVME2434-1 MVME2400 MVME2400 SERIES MVME2434-3 MK48T59 SCANBE connector 32KB VME PMC VME COnnector
    Text: KEY FEATURES MPC750 32-bit microprocessor 32KB/32KB L1 cache 1MB backside L2 cache 256MB or 512MB of on-board ECC SDRAM Up to 1MB capacity for on-board firmware or user-specified requirements The MVME2400 processor modules pack optimum levels of flexibility and performance


    Original     		PDF MPC750 32-bit 32KB/32KB 256MB 512MB MVME2400 MPC750 MVME2400-D7 MVME2434 MVME2434-1 MVME2400 SERIES MVME2434-3 MK48T59 SCANBE connector 32KB VME PMC VME COnnector

    Flash MCp nand DRAM 107-ball

    Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
    Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00H008M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Flash MCp nand DRAM 107-ball SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density

    7F7F7F0B00000000

    Abstract: PC2-5300 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16
    Text: NT256T64UH4B0FN / NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 32M x 64 / 512MB: 64M x 64 / 1GB: 128M x 64 PC2-4200 / PC2-5300 / PC-6400 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 32Mx16/64Mx8 SDRAM B-Die Features • Performance:


    Original     		PDF NT256T64UH4B0FN NT512T64UH8B0FN NT1GT64U8HB0BN 256MB: 512MB: PC2-4200 PC2-5300 PC-6400 DDR2-533/667/800 32Mx16/64Mx8 7F7F7F0B00000000 PC2-6400 NT512T64UH8B0FN NT1GT64U8HB0BN-3C 32MX16