8M16 Search Results

8M16 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJMG3018M162AER		Amphenol Communications Solutions	RJMG, Input output Connectors, 10G 1x1 with leds
RJMG2018M16A1EH		Amphenol Communications Solutions	RJMG, Input output Connectors, 1x1,1G,with LEDs

8M16 Price and Stock

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Micron Technology Inc MT41K128M16JT-125-AUT:K-TR IC DRAM 2GBIT PARALLEL 96FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT41K128M16JT-125-AUT:K-TR	Digi-Reel	3,779		1	1 $7.17 10 $6.365 100 $5.6497 1000 $5.0123 10000 $5.0123	Buy Now
	MT41K128M16JT-125-AUT:K-TR	Cut Tape	3,779		1	1 $7.17 10 $6.365 100 $5.6497 1000 $5.0123 10000 $5.0123	Buy Now
	MT41K128M16JT-125-AUT:K-TR	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $5.07992	Buy Now
Micron Technology Inc MT46H128M16LFDD-48-IT:C IC DRAM 2GBIT PAR 208MHZ 60VFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT46H128M16LFDD-48-IT:C	Bulk	2,981		1	1 $12.13 10 $11.262 100 $10.3872 1000 $9.79218 10000 $9.79218	Buy Now
Alliance Memory Inc AS4C8M16D1A-5TCN IC DRAM 128MBIT PAR 66TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS4C8M16D1A-5TCN	Tray	2,914		1	1 $2.23 10 $2.082 100 $1.9748 1000 $1.81687 10000 $1.8125	Buy Now
Karl Kruse GmbH & Co KG	AS4C8M16D1A-5TCN		8,455			1 - 10 - 100 - 1000 - 10000 -	Get Quote
IBS Electronics	AS4C8M16D1A-5TCN				1,080	1 - 10 - 100 - 1000 - 10000 $2.2211	Buy Now
Micron Technology Inc MT48LC8M16A2P-6A:L-TR IC DRAM 128MBIT PAR 54TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT48LC8M16A2P-6A:L-TR	Digi-Reel	2,292		1	1 $5.03 10 $4.681 100 $4.3289 1000 $3.98282 10000 $3.98282	Buy Now
	MT48LC8M16A2P-6A:L-TR	Cut Tape	2,292		1	1 $5.03 10 $4.681 100 $4.3289 1000 $3.98282 10000 $3.98282	Buy Now
Alliance Memory Inc AS4C8M16SA-7TCN IC DRAM 128MBIT PAR 54TSOP II
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AS4C8M16SA-7TCN	Tray	2,244		1	1 $3.06 10 $2.855 100 $2.72825 1000 $2.43792 10000 $2.43792	Buy Now
Newark	AS4C8M16SA-7TCN	Bulk	108		1	1 $1.83 10 $1.83 100 $1.83 1000 $1.83 10000 $1.83	Buy Now
TME	AS4C8M16SA-7TCN		230		1	1 $3 10 $2.75 100 $2.6 1000 $2.45 10000 $2.45	Buy Now
Karl Kruse GmbH & Co KG	AS4C8M16SA-7TCN		114,063			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	AS4C8M16SA-7TCN		108	10 Weeks	108	1 - 10 - 100 - 1000 $1.51231 10000 $1.40555	Buy Now

New Advantage Corporation	AS4C8M16SA-7TCN		2,376		1	1 - 10 - 100 - 1000 $2.74 10000 $2.56	Buy Now

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8M16 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
8M16 Abstract: HSP061-8M16 18055 QFN-16L DSASW003741 Text: HSP061-8M16 8-line ESD protection for high speed lines Features • ultralarge bandwidth: 6.3 GHz ■ ultralow capacitance: 0.6 pF ■ low time domain reflection ■ low leakage current: 100 nA at 25 °C ■ extended operating junction temperature range: -40 °C to 150 °C	Original	HSP061-8M16 QFN-16L 8M16 HSP061-8M16 18055 QFN-16L DSASW003741	PDF
Untitled Abstract: No abstract text available Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C	Original	HSP061-8M16 QFN-16L	PDF
Untitled Abstract: No abstract text available Text: HSP061-8M16 8-line ESD protection for high speed lines Datasheet - production data Applications The HSP061-8M16 is designed to protect against electrostatic discharge on sub micron technology circuits driving: • HDMI 1.3 and 1.4 • Digital Video Interface	Original	HSP061-8M16 HSP061-8M16 QFN-16L DocID18055	PDF
MB81416-12 Abstract: MB81416 mb81416-10 MB81416-15 Text: FUJITSU „ lit, M B 81416-10 M ICROELECTRONICS. INC. M B 8M16-12 " HityQLCc. MB81416-15 16,384 WORD BY 4-BIT NMOS DYNAMIC RANDOM ACCESS MEMORY PRELIMINARY DESCRIPTION The Fujitsu MB81416 is a fu lly decoded, dynam ic NMOS random access memory organized as 16384 w ords by 4-bits. The de	OCR Scan	MB81416-15 MB81416 18-pin MB81416-12 mb81416-10	PDF
Untitled Abstract: No abstract text available Text: HSP061-8M16 8-line ESD protection for high speed lines Features • Ultralarge bandwidth: 6.3 GHz ■ Ultralow capacitance: 0.6 pF ■ Low time domain reflection ■ Low leakage current: 100 nA at 25 °C ■ Extended operating junction temperature range: -40 °C to 150 °C	Original	HSP061-8M16 QFN-16L HSP061-8M16	PDF
"flow meter" Abstract: No abstract text available Text: LL Roots Flow Meter Model LL Roots flow meter is a kind of volumetric instrument used to measure the volume flow of the fluid in enclosed pipes. It can provide on-site display of accumulated flow; when being coupled with photoelectron pulse converter and flow totalizer through transmission output	Original	LPJ-12D LPJ-12D/FI "flow meter"	PDF
micron lpddr Abstract: 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged Text: 128Mb: x16, x32 Mobile LPDDR SDRAM AT Addendum Features Mobile LPDDR SDRAM AT Addendum 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options Marking • Vdd/Vddq = 1.70–1.95V • Bidirectional data strobe per byte of data DQS	Original	128Mb: MT46H8M16LF MT46H4M32LF 09005aef835b8f7c 09005aef835b8e70 micron lpddr 46h8m16 8M16 MT46H8M16LF MT46H4M32LF fbgapackaged	PDF
256mb ddr333 200 pin Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16 Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds	Original	128Mb: DDR333 MT46V32M4 MT46V16M8 MT46V8M16 256Mb: 256mb ddr333 200 pin A11 MARKING CODE mark DM 8M16 DDR200 DDR266 MT46V16M8 MT46V32M4 MT46V8M16	PDF
A11 MARKING CODE Abstract: MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design Text: 128Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC32M4A2 – 8 Meg x 4 x 4 banks MT48LC16M8A2 – 4 Meg x 8 x 4 banks 8M16A2 – 2 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC100-, and PC133-compliant	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100-, PC133-compliant 096-cycle 60-ball, 11x13 A11 MARKING CODE MARK 8E diode MT48LC16M8A2FB-75 sdram 4 bank 4096 16 8M16 MT48LC16M8A2 MT48LC32M4A2 MT48LC8M16A2 micron x8 pc100 sdram PC133 registered reference design	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY 128Mb: x4, x8, x16 SDRAM MT48LC32M4A2 - 8 Meg x 4 x 4 banks MT48LC16M8A2 - 4 Meg x 8 x 4 banks 8M16A2 - 2 Meg x 16 x 4 banks SYNCHRONOUS DRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html	Original	128Mb: PC100- PC133-compliant 096-cycle MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 128MSDRAM	PDF
s11 stopping compound Abstract: DEF01 Text: 128Mb: x16, x32 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 banks MT46H4M32LF – 1 Meg x 32 x 4 banks Features Options • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data DQS • Internal, pipelined double data rate (DDR)	Original	128Mb: MT46H8M16LF MT46H4M32LF 138ns. 09005aef8331b3e9/Source: 09005aef8331b3ce s11 stopping compound DEF01	PDF
Untitled Abstract: No abstract text available Text: 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 MEG X 4 X 4 BANKS MT46V16M8 – 4 MEG X 8 X 4 BANKS 8M16 – 2 MEG X 16 X 4 BANKS For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets	Original	128Mb: 09005aef8074a655 128MBDDRx4x8x16	PDF
MT48V Abstract: No abstract text available Text: ADVANCE‡ 128Mb: x16, x32 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LFFF, 8M16LFFF – 2 Meg x 16 x 4 banks MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds	Original	128Mb: 096-cycle -40oC MT48LC8M16LFFF, MT48V8M16LFFF 90-pin, 54-ball, MT48V	PDF
Untitled Abstract: No abstract text available Text: ADVANCE‡ 128Mb: x16 MOBILE SDRAM SYNCHRONOUS DRAM 8M16LF - 2 MEG x 16 x 4 BANKS Features Figure 1: 54-Ball FBGA Pin Assignment Top View • Temperature compensated self refresh (TCSR) • Fully synchronous; all signals registered on positive edge of system clock	Original	128Mb: 096-cycle 09005aef80c97015	PDF

Untitled Abstract: No abstract text available Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com/mobile Features Figure 1: • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS	Original	128Mb: MT46H8M16LF 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF	PDF
SpecTek Abstract: S80016LK7TW-8A 8M16 54-PIN PC-100 54pin TSOP SDRAM PC133 registered reference design Text: 128Mb: x4, x8, x16 SDRAM 3.3V SYNCHRONOUS DRAM Features: • • • • • • • • • • • Intel PC-100 3-3-3 or PC133 (3-3-3) compatible Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be	Original	128Mb: PC-100 PC133 096-cycle rankS80016LK7 S16008LK9 54-pin 60-ball PC100 SpecTek S80016LK7TW-8A 8M16 PC-100 54pin TSOP SDRAM PC133 registered reference design	PDF
TOP SIDE MARKING OF MICRON Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512 Text: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM 8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz	Original	128Mb/144Mb: MT6V8M16 MT6V8M18 18-bit) MT6V8M18F-3B MT6V8M18F-3C MT6V8M18F-4C 144MRDRAM TOP SIDE MARKING OF MICRON MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512	PDF
Untitled Abstract: No abstract text available Text: ADVANCE‡ 128Mb: x16, x32 BAT-RAM LOW POWER SDRAM SYNCHRONOUS DRAM 8M16LFFC, 8M16LFFC – 2 Meg x 16 x 4 banks 8M16LFFF, 8M16LFFF, MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks For the latest data sheet revisions, please refer to the Micron Web	Original	128Mb: 096-cycle -40oC MT48LC8M16LFFC, MT48V8M16LFFC MT48V8M16LFFC-8 MT48LC4M32LFFC-10 54-pin, 90-pin,	PDF
09005aef8091e66d Abstract: MT48LC16M8A2BB Text: 128Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC32M4A2 – 8 Meg x 4 x 4 Banks MT48LC16M8A2 – 4 Meg x 8 x 4 Banks 8M16A2 – 2 Meg x 16 x 4 Banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive	Original	128Mb: MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC100- PC133-compliant 4096-cycle 4096-cycle 09005aef8091e66d MT48LC16M8A2BB	PDF
75Z MARKING Abstract: No abstract text available Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds	Original	128Mb: DDR333 256Mb: 128Mx4x8x16DDR333 75Z MARKING	PDF
BA 5053 circuit diagram Abstract: BA 5053 Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks 8M16 – 2 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets	Original	128Mb: 128Mx4x8x16DDR BA 5053 circuit diagram BA 5053	PDF
MT46H8M16 Abstract: 8M16 MT46H8M16LF Text: 128Mb: 8 Meg x 16 Mobile DDR SDRAM Features Mobile DDR SDRAM 8M16LF – 2 Meg x 16 x 4 Banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Figure 1: • VDD/VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data DQS	Original	128Mb: MT46H8M16LF refresh08-368-3900 09005aef8199c1ec/Source: 09005aef81a19319 MT46H8M16LF MT46H8M16 8M16	PDF
EE-19 Abstract: 8M16 MT48LC16M8A2 MT48LC16M8A2TG-8E MT48LC32M4A2 MT48LC8M16A2 ck cl v2a Text: SYNCHRONOUS DRAM M T48LC 32M 4A 2- 8 Meg x 4 x 4 banks M T48LC 16M 8A 2- 4 Meg x 8 x 4 banks 8M16A2 -2 Meg x 16 x 4 banks For the latest data sheet, please re fe r to the M icron Web site: w w w ,m icron .com lm ti/m sp lhim lfd a tsshe ei.h im i FEATURES	OCR Scan	MT48LC32M4A2 MT48LC16M8A2 MT48LC8M16A2 PC66-, PC100- PC133-compliant 096-cycle 128Mb: 128MSDRAM EE-19 8M16 MT48LC16M8A2TG-8E ck cl v2a	PDF
DSA0046601.txt Abstract: AS4C8M16 Text: 8M16S FEBRUARY 2011 128Mb/ 8M x 16 bit Synchronous DRAM SDRAM Alliance Memory Confidential Features Table1. Key Specifications • • • • • • 8M16S tCK3 Clock Cycle time(min.) tAC3 Access time from CLK(max.) • • • • • • Fast access time from clock: 5/5.4 ns	Original	AS4C8M16S 128Mb/ 16-bit cycles/64ms 54-pin AS4C8M16S AS4C8M16S-6TCN AS4C8M16S-6TIN AS4C8M16S-7TCN DSA0046601.txt AS4C8M16	PDF

8M16 Search Results

8M16 Result Highlights (2)

8M16 Price and Stock

Micron Technology Inc MT41K128M16JT-125-AUT:K-TR

Micron Technology Inc MT46H128M16LFDD-48-IT:C

Alliance Memory Inc AS4C8M16D1A-5TCN

Micron Technology Inc MT48LC8M16A2P-6A:L-TR

Alliance Memory Inc AS4C8M16SA-7TCN

8M16 Datasheets Context Search

8M16

Untitled

Untitled

MB81416-12

Untitled

"flow meter"

micron lpddr

256mb ddr333 200 pin

A11 MARKING CODE

Untitled

s11 stopping compound

Untitled

MT48V

Untitled

Untitled

SpecTek

TOP SIDE MARKING OF MICRON

Untitled

09005aef8091e66d

75Z MARKING

BA 5053 circuit diagram

MT46H8M16

EE-19

DSA0046601.txt