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    16BIT Search Results

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    AD9172BBPZRL Analog Devices Dual,16bit,12GSPS RFDAC1500MSP Visit Analog Devices Buy
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    LTC2672HUH-16#TRPBF Analog Devices 5ch 300mA 16Bit CurrentSourceO Visit Analog Devices Buy
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    16BIT Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    16-bit FCT Cypress Semiconductor Cypress 16-bit FCT Logic Products Feature Balanced Drive Original PDF
    16-bit FCT Ground Bounce Cypress Semiconductor 16-bit FCT Logic Has Low Ground and VCC Bounce Original PDF
    16-bit FCT with Bus Hold Cypress Semiconductor 16-bit FCT Logic Feature Bus Hold Original PDF
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    16BIT Price and Stock

    B&K Precision Corporation RM16BIT

    ADAPTER/16 BIT EPROM
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    TE Connectivity TR16BI-TINEL-LOCK-RING

    TR16BI-TINEL-LOCK-RING
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    DigiKey TR16BI-TINEL-LOCK-RING Bulk 60
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    Mouser Electronics TR16BI-TINEL-LOCK-RING
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    PEI Genesis TR16BI-TINEL-LOCK-RING 6
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    Master Electronics TR16BI-TINEL-LOCK-RING 18
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    Sager TR16BI-TINEL-LOCK-RING 1
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    TE Connectivity SETR16BI-TINEL-LOCK-RING

    SETR16BI-SIDE-ENTRY-TINEL-LOCK-R
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    Master Electronics SETR16BI-TINEL-LOCK-RING
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    OMRON Corporation CINCINNATI UMAC SYSTEM, 16 BIT

    - Bulk (Alt: 904000000000)
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    Murata Manufacturing Co Ltd SCC2130-D08-05

    IMUs - Inertial Measurement Units GYROSCOPE X-AXIS +/-6G
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    TTI SCC2130-D08-05 Reel 50 50
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    16BIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM series Standard EEPROM MicroWire BUS EEPROM 3-Wire BR93G66-3A General Description BR93G66-3A is serial EEPROM of Serial 3-Line Interface Method. They are 16bit organization and CS PIN is the first PIN in their PIN configuration. Packages W(Typ) x D(Typ)x H(Max)


    Original     		PDF BR93G66-3A BR93G66-3A 16bit 16Kbit

    K4S641633F

    Abstract: No abstract text available
    Text: K4S641633F-R B L/N/P CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S641633F-R(B)L/N/P CMOS SDRAM 1M x 16Bit x 4 Banks SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S641633F-R 4Mx16 54CSP 16Bit K4S641633F

    K4S511632D

    Abstract: No abstract text available
    Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S511632D 512Mbit 16bit K4S511632D

    K4S56163LC

    Abstract: No abstract text available
    Text: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC

    K4S64163LF

    Abstract: No abstract text available
    Text: K4S64163LF-R B G/S CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)G/S CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF

    K4S641633H-R

    Abstract: No abstract text available
    Text: K4S641633H - R B E/N/G/C/L/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S641633H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4S641633H 16Bit 54FBGA K4S641633H-R

    BFR15

    Abstract: No abstract text available
    Text: K4S64163LF-R B F/R CMOS SDRAM 4Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S64163LF-R(B)F/R CMOS SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S64163LF-R 4Mx16 54CSP 16Bit K4S64163LF BFR15

    K4S561633C

    Abstract: No abstract text available
    Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C

    K4S561633F

    Abstract: K4S561633F-X
    Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		PDF K4S561633F 16Bit 54BOC K4S561633F-X

    HY57V641620B

    Abstract: HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75
    Text: HY57V651620B 4 Banks x 1M x 16Bit Synchronous DRAM DESCRIPTION The Hynix HY57V641620B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V641620B is organized as 4banks of 1,048,576x16.


    Original     		PDF HY57V651620B 16Bit HY57V641620B 864-bit 576x16. 400mil 54pin HY57V651620B HY57V651620BLTC-55 HY57V651620BTC-10 HY57V651620BTC-10P HY57V651620BTC-10S HY57V651620BTC-55 HY57V651620BTC-6 HY57V651620BTC-7 HY57V651620BTC-75

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    Untitled

    Abstract: No abstract text available
    Text: K4M28163PF - R B G/F Mobile-SDRAM 2M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28163PF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the


    Original     		PDF K4M28163PF 16Bit 54CSP

    Untitled

    Abstract: No abstract text available
    Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF 512Mb 512Mbit 16bit 31/VREF-0

    Untitled

    Abstract: No abstract text available
    Text: K4M64163PH - R B G/F Mobile-SDRAM 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M64163PH is 67,108,864 bits synchronous high data • LVCMOS compatible with multiplexed address. rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits,


    Original     		PDF K4M64163PH 16Bit 54CSP

    Untitled

    Abstract: No abstract text available
    Text: PcRam Description TS32MLE72V6K Dimensions The TS32MLE72V6K is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6K A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit


    Original     		PDF TS32MLE72V6K TS32MLE72V6K 36pcs 16Mx4 16bits 168-pin 432-word 72-bit

    Untitled

    Abstract: No abstract text available
    Text: PcRam Description TS32MLE72V6Y Dimensions The TS32MLE72V6Y is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit


    Original     		PDF TS32MLE72V6Y TS32MLE72V6Y 36pcs 16Mx4 16bits 168-pin 432-word 72-bit

    Untitled

    Abstract: No abstract text available
    Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory


    Original     		PDF TS16MLE72V6W TS16MLE72V6W 18pcs 16bits 168-pin 216-word 72-bit

    IS42RM16160E

    Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
    Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E IS42VM16160E-75BLI IS42VM16160E is42vm16160

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    Untitled

    Abstract: No abstract text available
    Text: TC74LCX16373AFT LOW-VOLTAGE 16-BIT D-TYPE LATCH WITH 5V TOLERANT INPUTS A N D OUTPUTS T h e TC74LCX16373AFT is a high p erform an ce C M O S 16bit D-TVPE LATCH. Designed fo r use in 3.3 V o lt systems, it achieves high speed o p e ra tio n w h ile m ain tain in g the


    OCR Scan     		PDF TC74LCX16373AFT 16-BIT TC74LCX16373AFT 16bit 10MHz CC116-(

    2A334

    Abstract: 1A739
    Text: IN T EG RA T ED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74LCX16646FT DATA SILICON MONOLITHIC TENTATIVE DATA LOW VOLTAGE 16-BIT BUS TRANSCEIVER I REGISTER WITH 5V TOLERANT INPUTS AND OUTPUTS The TC74LCX16646FT is a high performance CMOS 16bit


    OCR Scan     		PDF TC74LCX16646FT 16-BIT TC74LCX16646FT 16bit 1D1724Ö TSSOP56-P-61 002bfl31 2A334 1A739

    DIP42-P-600-2

    Abstract: MSM27C1602CZ
    Text: O K I Semiconductor MSM27C1602CZ 1,048,576-W ord x 16-Bit or 2,097,152-W ord x 8-Bit One Time PROM D ES C R IP TIO N T h e M S M 2 7 C 1 6 0 2 C Z is a 1 6 M b it e le c tric a lly P ro g ra m m a b le R e a d -O n ly M e m o ry w h o s e c o n fig u ra tio n can be e le c tric a lly sw itch e d be tw ee n 1,0 48,57 6 w o rd x 16bit and 2 ,0 9 7 ,1 5 2 w o rd x 8


    OCR Scan     		PDF MSM27C1602CZ 576-Word 16-Bit 152-Word MSM27C1602CZ 16Mbit 16bit DIP42-P-600-2

    panasonic ag

    Abstract: panasonic ASR panasonic fj PANASONIC Vu SERIES MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 3CDT
    Text: Panasonic 4M 262,144-word x 16bit Dynamic RAM 3.3V ± 0.3V 2CAS, 1WE 512Refresh Fast Page Mode P/N: MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 The technical information described herein provides the typical characteristics and the application circuit of a respective product, not intended to guarantee or permit a


    OCR Scan     		PDF 144-word 16bit) 512Refresh MN41V4260DSJ-06 MN41V4260DSJ-07 MN41V4260DTT-06 MN41V4260DTT-07 DQ8-DQ15 DQ8-DQ15 panasonic ag panasonic ASR panasonic fj PANASONIC Vu SERIES MN41V4260DTT-07 3CDT

    SOP40 prom

    Abstract: 4mbit prom MSM27C402CZ
    Text: O K I Semiconductor MSM27C402CZ 262,144-W ord x 16-Bit or 524,288-W ord x 8-Bit One Time PROM DES C R IP TIO N T he M S M 2 7 C 4 0 2 C Z is a 4 M b it e le c tric a lly P ro g ra m m a b le R e ad -O n ly M em o ry w h o se con figu ration can be e le ctrica lly sw itch ed betw een 26 2 ,1 4 4 w o rd x 16bit and 52 4 ,2 8 8 w o rd x 8bit. T he M S M 27C 40


    OCR Scan     		PDF MSM27C402CZ 144-Word 16-Bit 288-Word MSM27C402CZ 16bit MSM27C40 MSM27C402 40-pin SOP40 prom 4mbit prom