Contextual Info: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs

256Kx72

Abstract: EP-3 ae2a
Contextual Info: Preliminary 256Kx72 Double Late Write SigmaRAMTM K7N167285A 256Kx72-Bit Pipelined SigmaRAMTM FEATURES GENERAL DESCRIPTION • Double Late Write mode , Pipelined Read mode. • 1.8V+150/-100 mV Power Supply. • 1.8V I/O supply. • Byte Writable Function.

Contextual Info: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate

tc-l 11w

Abstract: K7N167245A K7N167249A
Contextual Info: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.

CQ226

Abstract: tk 69 K7Z167285A
Contextual Info: K7Z167285A Preliminary 256Kx72 Double Late Write SigmaRAMTM Document Title 256Kx72 Double Late Write SigmaRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 1. November 2, 2000 March 30, 2001 May 16, 2001 July 18, 2001 Preliminary

MCM72F8

Abstract: MCM72F9 bQ54 111al2 Nippon capacitors
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MCM72F8/D DATA Advance information 2MB and 4MB Synchronous Static RAM Module Fast The MCM72F8 2 MB is configured as 256Kx72 bits and the MCM72F9 (4MB) is configured as 512K x 72 bits, Both are packaged in a 168 pin dual–in–line

Contextual Info: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs

7410

Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

256K DPRAM

Abstract: AN4028 CY2CC810 CYD18S72V CYD18S72V-133BBC SIGNAL PATH DESIGNER A18L
Contextual Info: Creating a 512K x 36 Dual-Port RAM from the 256Kx72 FLEx72 18-Mb Dual-Port RAM AN4028 Introduction The Cypress FLEx72™ 18-Mb Dual-Port RAM CYD18S72V is the industry’s first DP RAM with support for a 72-bit wide data bus and is organized in a 256K x 72 configuration. By

CI 7410

Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
Contextual Info: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

Contextual Info: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the

dq35j

Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
Contextual Info: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single

K7N167245A

Abstract: K7N167249A 326J
Contextual Info: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.

Contextual Info: White Electronic Designs 256Kx72 Synchronous Pipeline SRAM WEDPY256K72V-XBX Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS

PLL VCO MIL-PRF-38535

Contextual Info: PC7410M16 RISC Microprocessor Multichip Package Datasheet - Preliminary Specification Features • • • • • • PC7410 RISC Microprocessor Dedicated 2 MB SSRAM L2 Cache, Configured as 256Kx72 21 mm x 25 mm, 255 Ceramic Ball Grid Array Maximum Core Frequency = 400 MHz

Contextual Info: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the

Contextual Info: White Electronic Designs 256Kx72 Synchronous Pipeline SRAM WEDPY256K72V-XBX Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced

K7Z163688B

Abstract: K7Z167288B WG A8 6D 03 Z WG A8 6D 05 Z
Contextual Info: K7Z167288B K7Z163688B Preliminary 512Kx36 & 256Kx72 DLW Double Late Write RAM Document Title 512Kx36 & 256Kx72 DLW(Double Late Write) RAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Feb. 10, 2003 Preliminary 0.1 1. Correct the ZQ to programmable.

Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured • as 256Kx72 L2 Cache

K7N167249A

Contextual Info: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb April. 21. 2001 May. 10. 2001

dpi 602

Abstract: AO16 GW 94 H
Contextual Info: WP Y256K72V-XM DC M/HITE /MICROELECTRONICS 2MByte 256Kx72 Flow Through Synchronous SRAM Module AD VAN CED * FEATURES • F a s t A c c e s s T i m e s : 8, 1 0 n s ■ B y t e W r i t e and G lo b a l W r i t e C a p a b i l i t i e s ■ F a s t O E A c c e s s T i m e of 4 n s

cga motorola

Abstract: WED3C750A8M-200BX 7410 7410E WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola
Contextual Info: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-400BX* Features • • • • • A 400 MHz 7410 AltiVec™ µProcessor 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache

CS22

Abstract: dq35j fast sram 100mhz CS11 CS21 WEDPY256K72V-XBX DQ9-17
Contextual Info: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K