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    256KX72 Search Results

    256KX72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7MBV4158S128 Renesas Electronics Corporation 256KX72 SYNC FLOW THRU MO Visit Renesas Electronics Corporation
    7MBV4158S10 Renesas Electronics Corporation 256KX72 SYNC FLOW THRU MO Visit Renesas Electronics Corporation
    7MBV4158S108 Renesas Electronics Corporation 256KX72 SYNC FLOW THRU MO Visit Renesas Electronics Corporation
    7MBV4158S8 Renesas Electronics Corporation 256KX72 SYNC FLOW THRU MO Visit Renesas Electronics Corporation
    7MBV4158S12 Renesas Electronics Corporation 256KX72 SYNC FLOW THRU MO Visit Renesas Electronics Corporation

    256KX72 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX

    256Kx72

    Abstract: EP-3 ae2a
    Text: Preliminary 256Kx72 Double Late Write SigmaRAMTM K7N167285A 256Kx72-Bit Pipelined SigmaRAMTM FEATURES GENERAL DESCRIPTION • Double Late Write mode , Pipelined Read mode. • 1.8V+150/-100 mV Power Supply. • 1.8V I/O supply. • Byte Writable Function.


    Original     		PDF 256Kx72 K7N167285A 256Kx72-Bit 209BGA 11x19 K7N167285A 368-bits EP-3 ae2a

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION n Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX 256K72 100MHz 133MHz 150MHz 166MHz 200MHZ

    tc-l 11w

    Abstract: K7N167245A K7N167249A
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.


    Original     		PDF 256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 tc-l 11w K7N167245A

    CQ226

    Abstract: tk 69 K7Z167285A
    Text: K7Z167285A Preliminary 256Kx72 Double Late Write SigmaRAMTM Document Title 256Kx72 Double Late Write SigmaRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. 1. 1. 1. November 2, 2000 March 30, 2001 May 16, 2001 July 18, 2001 Preliminary


    Original     		PDF K7Z167285A 256Kx72 K7N167285A 11x19 CQ226 tk 69 K7Z167285A

    MCM72F8

    Abstract: MCM72F9 bQ54 111al2 Nippon capacitors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MCM72F8/D DATA Advance information 2MB and 4MB Synchronous Static RAM Module Fast The MCM72F8 2 MB is configured as 256Kx72 bits and the MCM72F9 (4MB) is configured as 512K x 72 bits, Both are packaged in a 168 pin dual–in–line


    Original     		PDF MCM72F8/D MCM72F8 256Kx72 MCM72F9 MCM72F8 MCM72F9 bQ54 111al2 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION  Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX

    7410

    Abstract: 7410E WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBHX* 256Kx72 25x21mm, 625mm2 352mm2 1329mm2 525mm2 x64/x72 7410 WED3C7410E16M-XBHX WED3C750A8M-200BX WED3C7558M-XBX 90Sn10Pb 63SN 37PB CBGA 255 motorola

    256K DPRAM

    Abstract: AN4028 CY2CC810 CYD18S72V CYD18S72V-133BBC SIGNAL PATH DESIGNER A18L
    Text: Creating a 512K x 36 Dual-Port RAM from the 256Kx72 FLEx72 18-Mb Dual-Port RAM AN4028 Introduction The Cypress FLEx72™ 18-Mb Dual-Port RAM CYD18S72V is the industry’s first DP RAM with support for a 72-bit wide data bus and is organized in a 256K x 72 configuration. By


    Original     		PDF 256Kx72 FLEx72TM 18-Mb AN4028 CYD18S72V) 72-bit 36-bit 256K DPRAM AN4028 CY2CC810 CYD18S72V CYD18S72V-133BBC SIGNAL PATH DESIGNER A18L

    CI 7410

    Abstract: 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 PC7410 Multi-Chip Modules motorola
    Text: PC7410 Microprocessor + 2MByte L2-Cache Multi-Chip Module Fact Sheet Main Features • • • • • • PC7410 RISC microprocessor 16 Mbit of Synchronous Pipelined Burst SRAM configured as 256Kx72 L2-Cache Extended temperature modules 1.8V (Core)/2.5V (I/0) for industrial and military applications


    Original     		PDF PC7410 256Kx72 16Mbit BP123 CI 7410 7410 frequency divider PIN CONFIGURATION 7410 cga motorola 7410 transistor 7410 Multi-Chip Modules motorola

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM HiTCE™ Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBHX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBHX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 WED3C7410HITCE

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the


    Original     		PDF K7N167245A 256Kx72-Bit 256Kx72 11x19 00x10

    dq35j

    Abstract: CS11 CS21 CS22 WEDPY256K72V-XBX
    Text: White Electronic Designs WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM DESCRIPTION FEATURES The WEDPY256K72V-XBX employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs into a single


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX dq35j CS11 CS21 CS22

    K7N167245A

    Abstract: K7N167249A 326J
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167245A Document Title 256Kx72-Bit Pipelined NtRAM TM Revision History Rev. No. 0.0 0.1 0.2 0.3 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb 1. Speed bin merge.


    Original     		PDF 256Kx72 K7N167245A 256Kx72-Bit K7N167249A K7N167245A. 11x19 K7N167245A 326J

    PLL VCO MIL-PRF-38535

    Abstract: No abstract text available
    Text: PC7410M16 RISC Microprocessor Multichip Package Datasheet - Preliminary Specification Features • • • • • • PC7410 RISC Microprocessor Dedicated 2 MB SSRAM L2 Cache, Configured as 256Kx72 21 mm x 25 mm, 255 Ceramic Ball Grid Array Maximum Core Frequency = 400 MHz


    Original     		PDF PC7410M16 PC7410 256Kx72 PC7410M16 0879C PLL VCO MIL-PRF-38535

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History History Draft Date Remark 0.0 1. Initial document. April. 21. 2001 Preliminary 0.1 1. Add JTAG Scan Order May. 10. 2001 Preliminary Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to c hange the


    Original     		PDF K7N167249A 256Kx72-Bit 256Kx72 11x19 00x10

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs 256Kx72 Synchronous Pipeline SRAM WEDPY256K72V-XBX Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced


    Original     		PDF 256Kx72 WEDPY256K72V-XBX WEDPY256K72V-XBX 256K72 100MHz 133MHz 150MHz 166MHz 200MHZ

    K7Z163688B

    Abstract: K7Z167288B WG A8 6D 03 Z WG A8 6D 05 Z
    Text: K7Z167288B K7Z163688B Preliminary 512Kx36 & 256Kx72 DLW Double Late Write RAM Document Title 512Kx36 & 256Kx72 DLW(Double Late Write) RAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Feb. 10, 2003 Preliminary 0.1 1. Correct the ZQ to programmable.


    Original     		PDF K7Z167288B K7Z163688B 512Kx36 256Kx72 K7Z163688B K7Z167288B WG A8 6D 03 Z WG A8 6D 05 Z

    Untitled

    Abstract: No abstract text available
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-XBX* Features Product Features • 7410 AltiVec™ µProcessor • 16 Mbit of Synchronous pipeline burst SRAM configured • as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-XBX* 256Kx72 625mm2 352mm2 1329mm2 525mm2 x64/x72 W72M64V-XBX

    K7N167249A

    Abstract: No abstract text available
    Text: Preliminary 256Kx72 Pipelined NtRAMTM K7N167249A Document Title 256Kx72-Bit Pipelined NtRAMTM Revision History Rev. No. 0.0 0.1 0.2 History Draft Date Remark 1. Initial document. 1. Add JTAG Scan Order 1. Upate DC characteristics icc,isb April. 21. 2001 May. 10. 2001


    Original     		PDF 256Kx72 K7N167249A 256Kx72-Bit 11x19 00x10 00x18 K7N167249A

    cga motorola

    Abstract: WED3C750A8M-200BX 7410 7410E WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola
    Text: PowerPC 7410E AltiVec™/2M Byte SSRAM Multi-Chip Package Optimum Density and Performance in One Package WED3C7410E16M-400BX* Features • • • • • A 400 MHz 7410 AltiVec™ µProcessor 16 Mbit of Synchronous pipeline burst SRAM configured as 256Kx72 L2 Cache


    Original     		PDF 7410E WED3C7410E16M-400BX* 256Kx72 WED3C7410 MIF2009 cga motorola WED3C750A8M-200BX 7410 WED3C7410E16M-400BX TQFP 100 PACKAGE footprint we*400 Motorola PowerPC 7410 WED3C7410E16M-400 Multi-Chip Modules motorola

    CS22

    Abstract: dq35j fast sram 100mhz CS11 CS21 WEDPY256K72V-XBX DQ9-17
    Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM Preliminary* FEATURES DESCRIPTION ! Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K


    Original     		PDF WEDPY256K72V-XBX 256Kx72 WEDPY256K72V-XBX CS22 dq35j fast sram 100mhz CS11 CS21 DQ9-17

    Untitled

    Abstract: No abstract text available
    Text: W PY256K72V-XMDC M/HITE /M ICROELECTRONICS 2MByte 256Kx72 Flow Through Synchronous SRAM Module ADVANCED* FEATURES • Fast A c c e s s T im e s : 8 , 1 0ns ■ B yte W r i t e a n d G lo b a l W r i t e C a p a b il it i e s ■ Fast OE A c c e s s T im e o f 4 ns


    OCR Scan     		PDF PY256K72V-XMDC 256Kx72) 256KX72 128Kx36

    dpi 602

    Abstract: AO16 GW 94 H
    Text: WP Y256K72V-XM DC M/HITE /MICROELECTRONICS 2MByte 256Kx72 Flow Through Synchronous SRAM Module AD VAN CED * FEATURES • F a s t A c c e s s T i m e s : 8, 1 0 n s ■ B y t e W r i t e and G lo b a l W r i t e C a p a b i l i t i e s ■ F a s t O E A c c e s s T i m e of 4 n s


    OCR Scan     		PDF Y256K72V-XM 256Kx72) 128Kx18 168-pin 256Kx72; 128Kx72 128Kx36. 256KX72 128Kx36 dpi 602 AO16 GW 94 H