256mb ddr333 200 pin
Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
|
Original
|
128Mb:
DDR333
MT46V32M4
MT46V16M8
MT46V8M16
256Mb:
256mb ddr333 200 pin
A11 MARKING CODE
mark DM
8M16
DDR200
DDR266
MT46V16M8
MT46V32M4
MT46V8M16
|
PDF
|
DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
|
Original
|
UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
|
PDF
|
VDDSPD
Abstract: IC PIN CONFIGURATION OF 74 47
Text: SL72E5M256M8M-B75EW 256M X 72 Bits 2GB DDR SDRAM 184-Pin 1U Registered DIMM ECC (PC2100) FEATURES • • • • • • • • • • • • GENERAL DESCRIPTION PC2100 Compliant (DDR266B 133MHz—7.5ns@CL=2.5) 184-Pin DIMM form factor Auto and self refresh capability
|
Original
|
SL72E5M256M8M-B75EW
184-Pin
PC2100)
PC2100
DDR266B
133MHz--7
cycles/64ms
JEP-106E
VDDSPD
IC PIN CONFIGURATION OF 74 47
|
PDF
|
W3DG6430V-D2
Abstract: No abstract text available
Text: White Electronic Designs W3DG6430V-D2 PRELIMINARY* 256MB - 32M x 64 BUFFERED SDRAM MODULE FEATURES DESCRIPTION Burst Mode Operation The W3DG6430V is a 32M x 64 synchronous DRAM module which consists of sixteen 32Mx4 SDRAM components in TSOP II package, three very high speed
|
Original
|
W3DG6430V-D2
256MB
W3DG6430V
32Mx4
W3DG6430V10D2
100MHz
W3DG6430V-D2
|
PDF
|
transistor marking A19
Abstract: HANBit 72-pin SIMM simm 72pin HMS2M32M16V HMS2M32Z16V 2m x 32 SRAM SIMM
Text: HANBit HMS2M32M16V/Z16V SRAM MODULE 8Mbyte 2M x 32-Bit , 3.3V 72-Pin SIMM Design Part No. HMS2M32M16V, HMS2M32Z16V GENERAL DESCRIPTION The HMS2M32M16V/Z16V is a high-speed static random access memory (SRAM) module containing 2,097,152 words organized in a x32-bit configuration. The module consists of sixteen 1M x 4 SRAMs mounted on a 72-pin, double-sided, FR4printed circuit board.
|
Original
|
HMS2M32M16V/Z16V
32-Bit)
72-Pin
HMS2M32M16V,
HMS2M32Z16V
HMS2M32M16V/Z16V
x32-bit
72-pin,
72Pin-SIMM
32bit
transistor marking A19
HANBit 72-pin SIMM
simm 72pin
HMS2M32M16V
HMS2M32Z16V
2m x 32 SRAM SIMM
|
PDF
|
DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
|
Original
|
SM544083U74S6UU
128MByte
4Mx16
DQ111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
|
Original
|
SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
|
PDF
|
BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
|
Original
|
HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
|
PDF
|
SL32
Abstract: No abstract text available
Text: SL32 S/T 4B8M2A-Axx 8M X 32 DRAM FPM SIMM Memory Module FEATURES • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC SL32(S/T)4B8M2A-A60 60ns 15ns 110ns SL32(S/T)4B8M2A-A70 70ns 20ns 130ns SL32(S/T)4B8M2A-A80 80ns 20ns
|
Original
|
4B8M2A-A60
110ns
4B8M2A-A70
130ns
4B8M2A-A80
150ns
cycles/32ms
24-pin
A0-A10
SL32
|
PDF
|
SL72B4C16M4F-A60V
Abstract: Dram 168 pin EDO buffered 0212M
Text: SL72B4C16M4F-A60V 16M X 72 Bits DRAM 168-Pin DIMM with EDO, ECC , and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns The SiliconTech SL72B4C16M4F-A60V is an 16M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM).
|
Original
|
SL72B4C16M4F-A60V
168-Pin
SL72B4C16M4F-A60V
400-mil
34-pin
168pin
110ns
A1-A11
DQ12-15
Dram 168 pin EDO buffered
0212M
|
PDF
|
SL64G4B4M2E-A60
Abstract: No abstract text available
Text: 144-PIN SO-DIMMS SL64G4B4M2E-A60 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: tCAC tRC tRAC 60ns • • • • • • • • 15ns 104ns The SiliconTech SL64G4B4M2E-A60 is a 4M x 64 bits Dynamic RAM high density memory module. The SiliconTech
|
Original
|
144-PIN
SL64G4B4M2E-A60
104ns
SL64G4B4M2E-A60
24-pin
300-mil
DQ20-23
A0-A10
|
PDF
|
A0-A12
Abstract: No abstract text available
Text: SL72U4C16M8F-AxxV 16M X 72 Bit 128MB DRAM 168-Pin Unbuffered DIMM with EDO and ECC FEATURES • • • • • • • • • • • GENERAL DESCRIPTION Performance range: tRAC tCAC tRC tHPC SL…-A50V 50ns 13ns 84ns 20ns SL…-A60V 60ns 15ns 104ns 25ns
|
Original
|
SL72U4C16M8F-AxxV
128MB)
168-Pin
-A50V
-A60V
104ns
cycles/64ms
SL72U4C16M8F-AxxV
A0-A12
DQ16-19
A0-A12
|
PDF
|
SL32T4C32M4E-A60
Abstract: edo dram 72-pin simms 32Mx32 edo dram 60ns 72-pin simm
Text: SL32T4C32M4E-A60 32M X 32 Bits DRAM SIMM with EDO FEATURES • Performance range: tRC tRAC tCAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60 is a 32M x 32 bits Dynamic RAM DRAM Single In-line Memory Module (SIMM).
|
Original
|
SL32T4C32M4E-A60
104ns
SL32T4C32M4E-A60
32-pin
400-mil
cycles/64ms
72-pin
moun0-23
A0-A11
A0-A11
edo dram 72-pin simms
32Mx32
edo dram 60ns 72-pin simm
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SL72B4B4M4F-A60V 4M X 72 Bit DRAM 168-Pin DIMM with EDO, ECC, and Buffers FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • • GENERAL DESCRIPTION 20ns 110ns The SiliconTech SL72B4B4M4F-A60V is a 4M x 72 bits Dynamic RAM DRAM Dual In-line Memory Module (DIMM). The module
|
Original
|
SL72B4B4M4F-A60V
168-Pin
110ns
SL72B4B4M4F-A60V
24-pin
300-mil
168-pin
A1-A11
DQ40-43
DQ8-11
|
PDF
|
|
|
A0-A17
Abstract: edge connector 64 pin a1657 30 pin simm memory transistor CS4 SL832256K1F-12AG 28-pin SOJ SRAM
Text: SL832256K1F-xxAG 256K X 32 Bits SRAM Memory Module 64-Pin SIMM FEATURES GENERAL DESCRIPTION • This product is a 256K x 32 bits Static RAM (SRAM) memory module. The module consists of eight 256K x 4 bits SRAM memory components in 28-pin SOJ packages mounted on a
|
Original
|
SL832256K1F-xxAG
64-Pin
28-pin
64-pin
SL832256K1F-12AG
A0-A17
DQ8-11
WEA0-A17
edge connector 64 pin
a1657
30 pin simm memory
transistor CS4
28-pin SOJ SRAM
|
PDF
|
719a
Abstract: SL32T4C32M4E-A60V
Text: SL32T4C32M4E-A60V 32M X 32 Bits DRAM SIMM with EDO 3.3V Power Supply FEATURES • Performance range: tCAC tRC tRAC 60ns • • • • • • • • GENERAL DESCRIPTION 15ns 104ns The SiliconTech SL32T4C32M4E-A60V is a 32M x 32 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).
|
Original
|
SL32T4C32M4E-A60V
104ns
SL32T4C32M4E-A60V
32-pin
400-mil
cycles/64ms
72-pin
DQ20-23
A0-A11
A0-A11
719a
|
PDF
|
75Z MARKING
Abstract: No abstract text available
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
|
Original
|
128Mb:
DDR333
256Mb:
128Mx4x8x16DDR333
75Z MARKING
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STI338000 72-PIN SIMMS 8M X 33 Bits DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC I rc STI338000-60 60ns 15ns 110ns STI338000-70 70ns 20ns 130ns STI338000-80 80ns 20ns 150ns The Simple Technology STI338000 is a 8M x 33 bits Dynamic
|
OCR Scan
|
STI338000
STI338000-60
STI338000-70
STI338000-80
110ns
130ns
150ns
72-PIN
STI338000
|
PDF
|
DC244
Abstract: No abstract text available
Text: STI644004G1-70SVGS pcbhw^ - j 144-PIN SO-DIMMS 4M X 64 Bits DRAM SO-DIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI644004G1-70SVGS is a 4M x 64 bits Dynamic RAM high density memory module;. The Simple Technology STI644004G1-70SVGS consist of s ixteen CMOS
|
OCR Scan
|
STI644004G1-70SVGS
144-PIN
124ns
STI644004G1-70SVGS
24-pin
300-mil
DC244
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC
|
OCR Scan
|
IBM11N16735B
IBM11N16645B
IBM11N16735C
IBM11N16645C
16Mx64
16Mx72
104ns
75H1640
SA14-4626-02
DD05225
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA- H ^7240 DGíñSbl SEL • THM72V4030BTG-60/70 PRELIMINARY 4,194,304 WORDS X 72 BIT DYNAMIC RAM MODULE Description TheTH M 72V4030BTG is a 4,194,304 words by 72 bits dynamic RAM m odule which assembled 18 pcs ofTC51V16400BST on the printed circuit board. This m odule is optimized for application to the systems which are required high density and large
|
OCR Scan
|
THM72V4030BTG-60/70
72V4030BTG
ofTC51V16400BST
THMxxxxxx-60)
THMxxxxxx-70)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is
|
OCR Scan
|
W29L102
W29L102
12-volt
77nCSf;
8fjg-8-i57S5fjft8
SS2-275131QS
|
PDF
|
TME 57
Abstract: DQ131 45VCci a81s DQ111 A5173
Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ
|
OCR Scan
|
EDI9F232256BC
2x256Kx32
EDI9F232256B
2x256K
256Kx4
2322568RW
TME 57
DQ131
45VCci
a81s
DQ111
A5173
|
PDF
|
M53241
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The
|
OCR Scan
|
KMM53241OOAK/AKG
4Mx32
KMM5324100AK
24-pin
72-pin
5324100AK
M5324100AK
KM44C4100AK
M53241
|
PDF
|
