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    HY531000 Price and Stock

    SK Hynix Inc HY531000S-70

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HY531000S-70 18
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    Quest Components HY531000S-70 8
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    SK Hynix Inc HY531000AJ-70

    Dynamic RAM, Fast Page, 1M x 1, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY531000AJ-70 10
    • 1 $2.5
    • 10 $2.3
    • 100 $2.3
    • 1000 $2.3
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    SK Hynix Inc HY531000ALJ-60

    Dynamic RAM, Fast Page, 1M x 1, 26 Pin, Plastic, SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HY531000ALJ-60 1,532
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.7875
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    HY531000ALJ-60 239
    • 1 $3.45
    • 10 $3.45
    • 100 $1.725
    • 1000 $1.5956
    • 10000 $1.5956
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    hyn HY531000ALJ60

    1M X 1, FAST PAGE MODE Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HY531000ALJ60 75
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    HY531000 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HY531000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    HY531000-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY531000-60 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY531000-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY531000-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    HY531000AJ Hynix Semiconductor 1Mx1, Fast Page mode Original PDF

    HY531000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY531000 Series 1Mx 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000 300mil 1AB04-30-APR93 HY531000S HY531000J

    HYM536100M

    Abstract: No abstract text available
    Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted


    OCR Scan     		PDF HYM536100 36-bit HY514400 HY531000 22fiF HYM536100M HYM536100MG 1CC02-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160 in 42/42 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536220 36-bit HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG DQ0-DQ35) 4b750flfl

    Untitled

    Abstract: No abstract text available
    Text: ♦HYUNDAI SEMICONDUCTOR HYM591000C Series 1M x 9-bit CMOS ORAM MODULE DESCRIPTION The HYM591000C is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^ mF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000C HY531000A HYM591000CM/CLM 1BB08-10-MAY93 1BB08-10-MAYM 1BB08-10-MAVM

    HYM5361

    Abstract: HYM536100AMG hym536100
    Text: " H Y U N D A I SEMICONDUCTOR H Y M 5 3 6 1 0 0 A S e r ie s 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100Ais a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board, 0.22 iFdecoupling


    OCR Scan     		PDF 36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100

    Untitled

    Abstract: No abstract text available
    Text: “H YU N D A I HYM536120A W-Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536120A is a 1M x 36-bit Fast page m ode CMOS DRAM m odule consisting of two HY5118160B in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536120A 36-bit HY5118160B HY531000A 22nFdecoupling HYM536120AW/ALW HYM536120AWG/ALWG DQ0-DQ35)

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A 300mil 1AB05-10-APR93 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: ,Aj Hyundai ' f i HY531000 S E M IC O N D U C T O R 1 1 S ™ , M171202A-APR91 DESCRIPTION The HY531000 is a high speed, low power 1,048,576X1 bit CM OS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY531000 offers a fast


    OCR Scan     		PDF HY531000 M171202A-APR91 HY531000 576X1

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I H Y 5 3 1 A S e r i e s 1M X 1-bit CMOS DRAM DESCRIPTION The HY531000A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000A HY531000Ato 300mil 1AB05-10-APR94 HY531000AS HY531000ALS HY531000AJ HY531000AU

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8 -b it CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22/iF HYM581000CM/CLM 1BB07-10-M G0Q174S DDQ17M3

    HYM536100A

    Abstract: No abstract text available
    Text: H Y U ND A I HYM536100A Series SEMICONDUCTOR 1M x 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22p.F decoupling


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 132-OmW DGG20b4

    Untitled

    Abstract: No abstract text available
    Text: HYM536100A M-Series •HYUNDAI 1M X 36-bH CMOS DRAM MODULE DESCRIPTION The HYM536100A is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536100A 36-bH 36-bit HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG DQ0-DQ35)

    hy5118160b

    Abstract: No abstract text available
    Text: «HYUNDAI HYM536220A W-Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536220A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of four HY5118160B in 42/42 pin SOJ and eight HY531000Ain 20/26pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536220A 36-bit HY5118160B HY531000Ain 20/26pin 22nFdecoupling HYM536220AW/LW HYM536220AWG/LWG

    HYM591000AM

    Abstract: bb04 HY531000
    Text: •HYUNDAI SEMICONDUCTOR HYM591000A Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted


    OCR Scan     		PDF HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04

    HYM591000

    Abstract: HY531000 HYM591000M AV93
    Text: HYUNDAI SEMICONDUCTOR HYM591000 Series 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000 is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM591000 HY531000 HYM591000M 1BB02-12-MAYM 1BB02-12-MAY93 AV93

    Yundai

    Abstract: No abstract text available
    Text: • HY531000A 1Mx1, Fast Page mode DESCRIPTION T h is fa m ily is a 1M b it d y n a m ic RAM o rg a n iz e d 1 ,0 4 8 ,5 7 6 x 1-bit c o n fig u ra tio n w ith F a st P age m ode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design


    OCR Scan     		PDF HY531000A HY531000ALS HY531000ALJ) Yundai

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM581000C Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000C is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor Is mounted for each DRAM.


    OCR Scan     		PDF HYM581000C HY531000A 22fiF HYM581000CM/CLM 1BB07-10-M 1BB07-10-MAY93 1BB07-1

    HY5116400BT

    Abstract: HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ HY531000AJ hy51v65804 HY5117400BJ
    Text: • « Y U MD Al DRAM ORDERING INFORMATION 1M bit 1Mx1 HY531000AJ HY531000ALJ 60/70/80 1M bit (256KX4) HY534256AJ HY534256ALJ 45/50/60 2M bit (128KX16) HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY512264SLJC HY512264TC HY512264LTC HY512264SLTC


    OCR Scan     		PDF 256KX4) HY531000AJ HY531000ALJ HY534256AJ HY534256ALJ HY512260JC HY512260LJC HY512260SLJC HY512264JC HY512264LJC HY5116400BT HY5117400CJ 50-PIN HY5117804BT TSOP-II 44 26-PIN HY5118160BJ hy51v65804 HY5117400BJ

    HY531000

    Abstract: HY531000S HY531000J60 HY531000J
    Text: •HYUNDAI H Y 5 3 1 S e r i e s 1 M x 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY531000 300mil 1AB04-30-MAY94 4b750flfl HY531000S HY531000J60 HY531000J

    HYM536200AM60

    Abstract: 00S11
    Text: • H Y U N D A I H Y M 5 3 6 2 A M - S e r î e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling


    OCR Scan     		PDF HYM536200A 36-bit HY514400A HY531000A 22nFdecoupling HYM536200AM/ALM HYM536200AMG/ALMG 06QI127 HYM536200AM60 00S11

    HYM536100AM

    Abstract: HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai
    Text: » H Y U N D A I H Y M 5 3 6 1 0 0 A 1M _ X M - S e r ie s 36-bit CMOS DRAM MODULE DESCRIPTION HyM5361 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY514400A in 20/26 pin SOJ and four HY531000A in 20/26 pin SOJ on a72 pin glass-epoxy printed circuit board. 0.22uFdecouDlina


    OCR Scan     		PDF HYM536100A 36-bit HY514400A HY531000A 22uFdecouDlina HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-01-FEB94 HYM536100AM HYM536100AMG C 55GB HYM536100AM60 8ca3 hym536100am hyundai

    Untitled

    Abstract: No abstract text available
    Text: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling


    OCR Scan     		PDF 36-bit HYM536200 HY514400 HY531000 HYM536200M HYM536200MG 1CD02-20-MAY93 4b750Ã