DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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DQ124
Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016E14488HSG
200-Pin
256MB
2560mil)
DQ124
DQ77
DQ100
DQ99
DQ87
DQ88
DQ111
DQ106
DQ72
DQ79
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DQ112
Abstract: UG016C14488HSG-6 DQ100 DQ88
Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)
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UG016C14488HSG
200-Pin
256MB
2560mil)
DQ112
UG016C14488HSG-6
DQ100
DQ88
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
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UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
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MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
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200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
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smart modular
Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000
16MByte
SM51441000
16-megabyte
100-pin,
72-bit
70/80ns
20/18W
smart modular
SMART Modular Technologies
SM51441000-7
SM51441000-8
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SiS301
Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.
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SiS300
128-bit
SiS301
bt815
SILICON INTEGRATED SYSTEMS
1Mx16x4
LCD 320X200
CR10
CR14
CR16
CR18
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Untitled
Abstract: No abstract text available
Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation
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UG08C14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
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tsop 138
Abstract: DQ114
Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation
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UG08E14488HSG
2000mil)
128MB
200-Pin
DQ120
DQ121
DQ122
DQ123
DQ124
DQ125
tsop 138
DQ114
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DQ77
Abstract: SMART Modular Technologies SM51441000LP-07 SM51441000LP-08 dram memory module 1993 DQ114
Text: SM51441000LP January 1993 Rev 0 SMART Modular Technologies SM51441000LP 16MByte 1M x 144 CMOS Low Profile DRAM Module General Description Features The SM51441000LP is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000LP
16MByte
SM51441000LP
16-megabyte
100-pin,
72-bit
70/80ns
DQ77
SMART Modular Technologies
SM51441000LP-07
SM51441000LP-08
dram memory module 1993
DQ114
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in 4742A
Abstract: 4742A S253c capacitor 9013 npn 32P4742A PDCR 143
Text: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo Sam M bns A TDK G roup/C om pany Advance Information January 1995 D E S C R IP T IO N FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel
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P4742/4742A/4746/4746A
32P4742/4742A/4746/4746A
0195-rev
001127b
in 4742A
4742A
S253c
capacitor 9013 npn
32P4742A
PDCR 143
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STR WG 253
Abstract: PDCR 143
Text: SSI 32P4742/4742A/4746/4746A Read Channel with 1,7 ENDEC, 4-burst Servo ¿ ik m s y s h t is A TDK Group/Company Advance Information January 1995 DESCRIPTION FEATURES The SSI 32P4742/4742A/4746/4746A devices are high performance BiCMOS single chip read channel
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32P4742/4742A/4746/4746A
32P4742/4742A/4746/4746A
32P4742/4742A/4
001127b
STR WG 253
PDCR 143
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Untitled
Abstract: No abstract text available
Text: CXA1122AM SONY. VTR RF M odulator Description The CXA1122AM is a VTR RF modulator fo r the VHF band, and is used to convert frequencies of audio signals and video signals. This modulator consists of circuits such as video clamp, white clipping, a carrier oscillator, video
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CXA1122AM
CXA1122AM
16pin
CXA1122P.
QQ112fl4
CAX1122AM
300mil
USOP016-P-0300-A
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Untitled
Abstract: No abstract text available
Text: HITACHI/ LINEAR DEVICES 2bE D 0011558 HA13116- T-'K-OS'-Ol 20 W BTL Audio Power Amplifier The HA13116 is a high output and low distortion power IC designed for component car stereo amplifiers. At 13.2 V to 4 £2 load, this power IC provides an output power of 16 W with 1 %
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HA13116---------------------
HA13116
HA13116
44Tb202
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Untitled
Abstract: No abstract text available
Text: 42E » JH SAMSUNG ELECTRONICS INC KM75C103A 7U_4'1.M2 _00].Ji5bS 3 M S M G K CMOS PROGRAMMABLE FLAG FIFO :%-zs P r o g r a m m a b le - F la g s , 2 K X 9 F IF O FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory —2 K x 9 Organization • Very High Speed independent of depth/width
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KM75C103A
--30ns
120mA
32-Pin
T-46-35
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Untitled
Abstract: No abstract text available
Text: ELECTRONIC DESIGNS INC fiS D e | 353011M 00D0141 7 I 1 -4 6 * 3 -1 2 EDH 8808ACL 15/20 Monolithic The future. . . today. 8Kx8 Static RAM CMOS, Monolithic Features The EDH 8808ACL is a high performance, low power, CMOS Static RAM utilizing 6 transistor cell
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353011M
00D0141
8808ACL
8808ACL
8808ACL-10
8808ACL-85
8808ACL-CMHR
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vl82c10
Abstract: No abstract text available
Text: VLSI T e c h n o lo g y inc. ADVANCE INFORMATION VL82C316 SCAMP II SYSTEM CONTROLLER FEATURES • Compatible with 386SX-based PC/AT compatible systems * Up to 33 MHz system clock • Replaces 11 peripheral devices on the motherboard: - Two 82C37A DMA controllers
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VL82C316
386SX-based
82C37A
74LS612
82C59A
82C54
208-LEAD
vl82c10
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Untitled
Abstract: No abstract text available
Text: uim D 1H 1M L O & i^ S I Final Electrical Specifications LTC1325 TECHNOLOGY M icroprocessor-Controlled Battery M a na g e m ent System J u n e 1994 F€ATUR€S DCSCftlCTIOn • Fast Charge Nickel Cadmium, Nickel Hydride or Lead Acid Batteries under joP Control
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LTC1325
111kHz
10-Bit
5VT016V
IRF9Z30
1NS818
62fxH
1N5818
IRFZ34
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARYMarch 1995 Edition 3.0 PRO DUCT PROFILE SHEET — FUJITSU M B 8 1 1 7 4 0 0 A -50/-60/-70 CMOS 4M x 4 BIT FAST PAGE MODE DYNAMIC RAM CMOS 4,194,304 x 4 BIT Fast Page Mode Dynamic RAM The Fujitsu MB8117400A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB8117400A
024-bits
374175b
Q011217
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Untitled
Abstract: No abstract text available
Text: Whol HEW LETT mLUM PACKARD Avantek Products Double Balanced Mixer 1.0 to 500 MHz Technical Data UMX-570 Features Description Pin Configuration • 40 dB LO to RF Isolation • 5.5 dB Conversion Loss/ Noise Figure • +34 dBm Input Intercept Point The UMX Series double-balanced
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UMX-570
UMX-570
D01123D
50-ohm
DQ11231
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