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    s3c2440 pin

    Abstract: S3C2440A s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP ARM920T EINT20 128MBYTE
    Text: Embest Mini2440-I Processor Card Features z z z z z z z z z Dimensions: 65mm x 45mm Temperature: 0~+70℃ Samsung's S3C2440A microcontroller based on a 1.33V Static ARM920T CPU core with MMU 64Mbyte SDRAM 32MB/128MB compatible 128Mbyte Nand flash (support 256Mbyte for option)


    Original     		PDF Mini2440-I S3C2440A ARM920T 64Mbyte 32MB/128MB 128Mbyte 256Mbyte 12MHz 200MHz 32768Hz s3c2440 pin s3c2440A ARM920T S3C2440 Samsung S3C2440 samsung s3c2440 arm920t core TSXP EINT20

    DELL inspiron power supply diagram

    Abstract: Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8
    Text: CompactFlash Card W7B6-S Series Version:1.02 June, 2001 Description CompactFlash™ Card W7B6-S series were made by Wintec Industries in Fremont, CA USA. It complies with CompactFlash™ specification, and is suitable for the usage of data storage memory medium for


    Original     		PDF 4MByte/96MByte/128MByte/160MByte/224MByte W7B6016M1XG-S128 W7B6016M1XG-S7 W7B6032M1XG-S128 W7B6032M1XG-S7 W7B6048M1XG-S128 W7B6048M1XG-S7 W7B6064M1XG-S128 W7B6064M1XG-S7 W7B6032M1XG-S256 DELL inspiron power supply diagram Thinkpad 535X philips pcd500 dell inspiron ARMADA 300 ECC COMPAQ Toshiba Satelite C APPLE dock prius cf 44 pin to ide 1.8

    Untitled

    Abstract: No abstract text available
    Text: Graphic Display Controller D 0:31 HOST BUS INTERFACE PCI/Host Interface A(0:23) Pixel Bus MB86276 Video Input and Scaler Display Controller MD(0:31) 64MByte SDRAM or FCRAM External Memory Controller YUV/RGB Digital RGB 2D Rendering Engine MA(0:14) Description


    Original     		PDF MB86276 64MByte MB86276 MB86296 32-bit 16-bit GDC-FS-21148-2/2006

    HSD8M64B8A

    Abstract: No abstract text available
    Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B8A 64Mbyte 8Mx64-Bit) 144pin HSD8M64B8A 400mil 144-pin HSD8M64B8

    kr 720

    Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
    Text: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B4W 64Mbyte 8Mx64-Bit) 144pin HSD8M64B4W 400mil 144-pin kr 720 HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12

    Untitled

    Abstract: No abstract text available
    Text: SM53616100UP3UU October 1996 Rev 2A SMART Modular Technologies SM53616100UP3UU 64MByte 16M x 36 CMOS DRAM Module General Description Features The SM53616100UP3UU is a high performance, 64-megabyte dynamic RAM module organized as 16M words by 36 bits, in a 72-pin, leadless, single-in-line


    Original     		PDF SM53616100UP3UU SM53616100UP3UU 64MByte 64-megabyte 72-pin, SM536161002P3UU SM536161004P3UU 16Mx1 64MByte

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5720840UUEUGU Modular Technologies September 23, 1997 64MByte 8M x 72 DRAM Module - 4Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM57208400UEUGU SM57208401UEUGU SM57208408UEUGU SM57208409UEUGU


    Original     		PDF SM5720840UUEUGU 64MByte 168-pin SM57208400UEUGU SM57208401UEUGU SM57208408UEUGU SM57208409UEUGU 60/70/80ns 300mil AMP-390052-1

    Untitled

    Abstract: No abstract text available
    Text: SMART SM5720830U4Y6GU Modular Technologies Preliminary 64MByte 8M x 72 DRAM Module - 4Mx16, 4Mx4 based 168-pin DIMM, Non-buffered, Parity Features Part Numbers • • • • • • • • • • • SM572083014Y6GU SM572083194Y6GU Standard : JEDEC


    Original     		PDF SM5720830U4Y6GU 64MByte 4Mx16, 168-pin SM572083014Y6GU SM572083194Y6GU 50/60/70ns 400mil AMP-390052-6 4Mx18

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    chip amp ta 8268

    Abstract: HSD16M32F4V 16MX32
    Text: HANBit HSD16M32F4V/VA Synchronous DRAM Module 64Mbyte 16M x 32-Bit SMM based on 16Mx8, 4Banks, 4K Ref., 3.3V Part No. HSD16M32F4V/VA GENERAL DESCRIPTION The HSD16M32F4V/VA is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module


    Original     		PDF HSD16M32F4V/VA 64Mbyte 32-Bit 16Mx8, HSD16M32F4V/VA 120-pin, 60-pin HSD16M32F4V-10 chip amp ta 8268 HSD16M32F4V 16MX32

    HSD16M32D4

    Abstract: HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12
    Text: HANBit HSD16M32D4 Synchronous DRAM Module 64Mbyte 16Mx32-Bit , 100pin DIMM, 4Banks, 8K Ref., 3.3V Part No. HSD16M32D4 GENERAL DESCRIPTION The HSD16M32D4 is a 16M x 32 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 100-pin glass-epoxy substrate.


    Original     		PDF HSD16M32D4 64Mbyte 16Mx32-Bit) 100pin HSD16M32D4 400mil 100-pin HSD16M32D4-10 HSD16M32D4-10L HSD16M32D4-12

    Untitled

    Abstract: No abstract text available
    Text: December 1997 Revision 2.0 data sheet SOB8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.


    Original     		PDF SOB8UL6484- 64MByte 64-megabyte 144-pin, MB81164842A- MP-DRAMM-DS-20559-11/97

    Untitled

    Abstract: No abstract text available
    Text: May 1998 Revision 3.0 data sheet PDC8RV7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M words


    Original     		PDF PDC8RV7284- 64MByte PC/100 64-megabyte 168-pin, MB81F64842B-

    WEDPN8M64VR-XBX

    Abstract: No abstract text available
    Text: WEDPN8M64VR-XBX 8Mx64 Registered Synchronous DRAM FEATURES GENERAL DESCRIPTION ! Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access memory using 4 chips containing 134,217,728 bits. Each chip is internally configured as a


    Original     		PDF WEDPN8M64VR-XBX 8Mx64 64MByte 512Mb) 432-bit 16-bit WEDPN8M64VR-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with


    Original     		PDF WEDPN8M72V-XBX 8Mx72 125MHz WEDPN8M72V-XBX 64MByte 512Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728


    Original     		PDF WEDPN8M72VR-XBX 8Mx72 WEDPN8M72VR-XBX 64MByte 512Mb) 100MHz 66MHz

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC8UV7284- 64MByte 64-megabtye 168-pin, MB81164842A- 67Mhz 84Mhz 100Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU November 1997 Revision 1.1 data sheet S0B8UL6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SOB8UL6484-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as


    OCR Scan     		PDF S0B8UL6484- 64MByte SOB8UL6484- 64-megabyte 144-pin, B81164842A- 84Mhz 100Mhz 125Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC8UV6484- 64MByte 64-megabtye 168-pin, MB81164842A- 67Mhz 84Mhz 100Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UL7284-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as


    OCR Scan     		PDF SDC8UL7284- 64MByte 64-megabyte 168-pin, MB81164842A- 64MByte 67Mhz 84Mhz 100Mhz

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU January 1998 Revision 1.0 data sheet PDC8UV6484A- 103/10 T-S 64MByte (8Mx 64) CMOS, PC/100 Synchronous DRAM Module General Description The PDC8UV6484A-(103/10)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    OCR Scan     		PDF PDC8UV6484A-( 64MByte PC/100 PDC8UV6484A- 64-megabyte 168-pin, F64842B- 64MByte 168-pin 200-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU July 1998 Revision 1.0 data sheet PDC8R V7284J- 102/103 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC8RV7284J-(102/103)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as 8M


    OCR Scan     		PDF V7284J- 64MByte PC/100 PDC8RV7284J- 64-megabyte 168-pin, F64842C- 64MByte 10168-pin 200-pin

    Untitled

    Abstract: No abstract text available
    Text: cP IITSU May 1998 Revision 3.0 data sheet PDC8R V7284- 103/10 T-S 64MByte (8M x 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC 8RV7284-(103/10)T-Sis a high performance, 64-megabyte synchronous, dynamic RAM module organized as8M words


    OCR Scan     		PDF V7284- 64MByte PC/100 8RV7284- 64-megabyte 168-pin, F64842B- 64MByte 72-pin 144-pin

    Untitled

    Abstract: No abstract text available
    Text: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC8U V724 2/4 -(60/70)(J/T)G-S 64MByte (8M x 72) CMOS EDO DRAM Module -3.3V (ECC) General Description The EDC8UV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 64-megabyte dynamic RAM module


    OCR Scan     		PDF 64MByte EDC8UV724 64-megabyte 168-pins,