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    Festo DYSD-Q11-32-25-Y1F-S-Y9 (ALTERNATE: 8161535)

    Shock Absorber, for actuator | Festo DYSD-Q11-32-25-Y1F-S-Y9
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    RS DYSD-Q11-32-25-Y1F-S-Y9 (ALTERNATE: 8161535) Bulk 5 Weeks 1
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    Festo DYSD-Q11-32-25-Y1F-L-Y10 (ALTERNATE: 8161536)

    Shock Absorber, for actuator | Festo DYSD-Q11-32-25-Y1F-L-Y10
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS DYSD-Q11-32-25-Y1F-L-Y10 (ALTERNATE: 8161536) Bulk 5 Weeks 1
    • 1 $866.19
    • 10 $866.19
    • 100 $866.19
    • 1000 $866.19
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    DQ113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		PDF UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


    Original     		PDF SM544083U74S6UU 128MByte 4Mx16 DQ111

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		PDF SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		PDF HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


    Original     		PDF UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


    Original     		PDF 750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original     		PDF UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil)

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


    Original     		PDF UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil)

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


    Original     		PDF 200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


    Original     		PDF SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8

    SiS301

    Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
    Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.


    Original     		PDF SiS300 128-bit SiS301 bt815 SILICON INTEGRATED SYSTEMS 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18

    Untitled

    Abstract: No abstract text available
    Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation


    Original     		PDF UG08C14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125

    tsop 138

    Abstract: DQ114
    Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation


    Original     		PDF UG08E14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 tsop 138 DQ114

    dq96

    Abstract: No abstract text available
    Text: SM544044004X5GU June 1997 Rev 1 SMART Modular Technologies SM544044004X5GU 64MByte 4M x 144 CMOS DRAM Module General Description Features The SM544044004X5GU is a high performance, 64-megabyte dynamic RAM module organized as 4M words by 144 bits, in a 100-pin, dual readout, leadless,


    Original     		PDF SM544044004X5GU 64MByte 64-megabyte 100-pin, 72-bit 70/80ns 14/12W 396mW dq96

    Untitled

    Abstract: No abstract text available
    Text: b3E D 7 tn ? D ? b LC83010N, 83010NE DQ11337 bfiO « T S A J SANYO 3071 3174 S EMI CONDUCTOR C0RP C M O S LSI Audio Digital Signal Processor 3945A O ve rvie w The LC83010N, 83010NE is a sin g le -ch ip d ig ita l signal processor DSP . It is designed fo r use in the


    OCR Scan     		PDF LC83010N, 83010NE DQ11337 83010NE LC83010N LC83010NE

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D bbS3T31^ DQ113T1 E • | BYV43_SERIES T-03-19 ' SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and zero


    OCR Scan     		PDF bbS3T31^ DQ113T1 BYV43_ T-03-19 BYV43-40A, DD114D5 BYV43SERIES M1246 BYV43

    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ LINEAR DEVICES 2bE J> OOliaST 4 HA21001 M S- - T -T7 -O S -O S - VHF/UHF Tuner Use G aAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion


    OCR Scan     		PDF HA21001 MSP-18 -30dBm -40dBm 75MHz 60MHz 589-830Q

    Untitled

    Abstract: No abstract text available
    Text: SONY CXP875P40 CMOS 8-bit Single Chip Microcomputer Description The CXP875P40 is a CMOS 8-bit micro-computer which consists of arithmetic coprocessor, A/D converter, serial interface, timer/counter, time base timer, vector interruption, high precision timing


    OCR Scan     		PDF CXP875P40 CXP875P40 CXP8753 D01R330 100PIN QFP-100P-L01 QFP100-P-1420-A

    Untitled

    Abstract: No abstract text available
    Text: M IC S Q N I IIW - 1 W IH • t s em c o n o u c to r MT2D88C25632, MT4D88C5123Z 1MBr 2MB DRAM CARDS n c DRAM CARD 1, 2 MEGABYTES 256K, 512K x 32; 5.0V FAST PAGE MODE FEATURES • Low power • JEDEC-standard 88-pin DRAM card pinout • Polarized receptacle connector


    OCR Scan     		PDF MT2D88C25632, MT4D88C5123Z 88-pin MT2DMC25C32. C51232 GD11374 MT4D88C51232 MT20MC2S632.

    RC SERVO CIRCUIT

    Abstract: 32P4752 em 231 rtd rc servo RC SERVO digital CIRCUIT pdcr 900 real time application and product for fir
    Text: SSI 32P4752/4756 ¿ iíkm ó yskm s Read Channel with 1,7 ENDEC, 4-burst Servo A TDK Group/Company January 1995 DESCRIPTION FEATURES The SSI 32P4752/4756 devices are high performance BiCMOS single chip read channel ICs that contain all the functions needed to implement a complete zoned


    OCR Scan     		PDF 32P4752/32P4756 32P4752/32P4756 32P4752/4756 RC SERVO CIRCUIT 32P4752 em 231 rtd rc servo RC SERVO digital CIRCUIT pdcr 900 real time application and product for fir

    d472 TRANSISTOR

    Abstract: transistor d472 74X374 intel 80386dx WD90C30 E472H stp 1016 a872 TRANSISTOR equivalent d472 OC72
    Text: W D8110Æ V INTRODUCTION 1.0 INTRODUCTION The WD811Q/LV System Controllers are designed to provide a high performance, single chip. sys­ tem controller supporting all 80486SX, 80486DX, 80386SX and 80386DX CPUs In AT bus based Desktop/Lapkjpi'Notetoook/Pen-based systems.


    OCR Scan     		PDF WD8110/LV WD8110/LV 80466SX, 80466DX, 80386SX 80386DX WD81KVLV WD811CVLV 80486SX. 80486SXLP. d472 TRANSISTOR transistor d472 74X374 intel 80386dx WD90C30 E472H stp 1016 a872 TRANSISTOR equivalent d472 OC72

    PCF84C00

    Abstract: MAB8048 PCF84C21 PCF84C41 PCF84C81 COC11
    Text: T T 3ME D • PCF84C00 PCF84C21/C PCF84C41/C PCF84C81/C 711002b QG11373 3 I PHILIPS INTERNATIONAL 1 BUS " ~ P H P M ct - o a SINGLE-CHIP 8-BIT MICROCONTROLLERS WITH l2C-BUS INTERFACE DESCRIPTION An advanced CMOS process is used to manufacture the PCF84C00, PCF84C21/C, PCF84C41/C and


    OCR Scan     		PDF 711002b 0Q11373 pcf84c00 pcf84c21/c pcf84c41/c pcf84c81/c PCF84C00, PCF84C21/C, PCF84C81/C MAB8048 PCF84C21 PCF84C41 PCF84C81 COC11

    1041LV

    Abstract: 1041LW 1141LV 1141LW 41LK 41LL 41LM 41LV 41LW 41LX
    Text: AT&T Interface Products 41LK, 41LL, and 41LM Electrical Characteristics continued Table 5-2. 41 LK, 41 LL, and 41 LM Voltage and C urrent Characteristics (Driver) T a = 0 °C to 85 °C. Sym bol Min Typ Max Unit VOL VOH — 3.0 — 3.0 4.0 2.0 V o h - 0.8+


    OCR Scan     		PDF 005002b 1041LV 1041LW 1141LV 1141LW 41LK 41LL 41LM 41LV 41LW 41LX