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    Eaton Bussmann MDQ-1-1-4

    FUSE GLASS 1.25A 250VAC 3AB 3AG
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    TME MDQ-1-1-4 5
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    Eaton Bussmann BK-MDQ-1-1-4

    FUSE GLASS 1.25A 250VAC 3AB 3AG
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    TME BK-MDQ-1-1-4 100
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    Eaton Corporation MDQ-1-1/4

    Fuse Miniature 1.25A 250V Slow Blow 2-Pin Cartridge Holder - Bulk (Alt: MDQ-1-1-4)
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    Avnet Americas MDQ-1-1/4 Bulk 14 Weeks 10
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    Mouser Electronics MDQ-1-1/4
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    Eaton Corporation BK/MDQ-1-1/4

    Fuse Miniature 1.25A 250V Slow Blow 2-Pin Cartridge Holder Cardboard Carton - Bulk (Alt: BK-MDQ-1-1-4)
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    Avnet Americas BK/MDQ-1-1/4 Bulk 11 Weeks 100
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    Eaton Bussmann MDQ-1-1/4

    Buss Small Dimension Fuse/ Bulk Rohs Compliant: No |Eaton Bussmann MDQ-1-1/4
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    Newark MDQ-1-1/4 Bulk 5
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    Sager MDQ-1-1/4 5
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    DQ114 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


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    UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131 PDF

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com


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    SM544083U74S6UU 128MByte 4Mx16 DQ111 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


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    SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns PDF

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


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    HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 PDF

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79 PDF

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


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    UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


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    UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil) PDF

    EDI8F8259C20M6C

    Abstract: EDI8F8259C25M6C EDI8F8259C35M6C 256KX8 SRAM 25nS 256kx8 sram 61 sram 256kx8
    Text: EDI8F8259C 256Kx8 SRAM Module 256Kx8 Static RAM CMOS, Module Features 256Kx8 bit CMOS Static The EDI8F8259C is a 2 megabit CMOS Static RAM based on two high speed 256Kx4 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. The 32 pin DIP pinout adheres to the JEDEC standard for


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    EDI8F8259C 256Kx8 EDI8F8259C 256Kx4 01581USA EDI8F8259C20M6C EDI8F8259C25M6C EDI8F8259C35M6C 256KX8 SRAM 25nS 256kx8 sram 61 sram 256kx8 PDF

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


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    200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G PDF

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


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    SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8 PDF

    SiS301

    Abstract: bt815 SILICON INTEGRATED SYSTEMS SiS300 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18
    Text: SiS300 2D/3D/Video/DVD Accelerator SiS300 2D/3D/Video/DVD Accelerator Preliminary Rev. 0.3 March 23, 1999 This specification is subject to change without notice. Silicon Integrated Systems Corporation assumes no responsibility for any errors contained herein.


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    SiS300 128-bit SiS301 bt815 SILICON INTEGRATED SYSTEMS 1Mx16x4 LCD 320X200 CR10 CR14 CR16 CR18 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08C14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Fast Page Mode (FPM) operation


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    UG08C14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 PDF

    tsop 138

    Abstract: DQ114
    Text: UG08E14488HSG Data sheets can be downloaded at www.unigen.com 128MB 8M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh FEATURES Single 5.0V ± 10% power supply Hyper Page Mode (EDO) operation


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    UG08E14488HSG 2000mil) 128MB 200-Pin DQ120 DQ121 DQ122 DQ123 DQ124 DQ125 tsop 138 DQ114 PDF

    HDR20X2

    Abstract: 5R14 43A16 CTL036 CONN10X2 4a20 27A14 MEMDATA23 PD153 20A7
    Text: 8 7 6 5 4 3 2 1 VUSB VUSB_FP3 VIN V4P6 2 J3 VIN 1 U22 TPS79601 JUMPER5STAR D 2 3 2VIN VIN 1 JP9 JP10 1 3 +5.0V DC IN 4 5 4.66V VIN_CONN VOUT4 1EN FB2 D FB5 GND 3 TABGND 6 2 FERRITE_BEAD C16 15 PF R22 84.5K 1% PJ-102A 1 2 3 4 5 6 7 8 9 10 FROM MOTHER BOARD


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    TPS79601 PJ-102A HDR10 51GND51 67GND67 75GND75 86GND86 88GND88 27IO27 HDR20X2 5R14 43A16 CTL036 CONN10X2 4a20 27A14 MEMDATA23 PD153 20A7 PDF

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    DQ114TM PDF

    A111

    Abstract: A210 DQ01-3
    Text: m D EDI8M8130C/P90/100/120/150 \ _ High Performance Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C/P is a 1024K bit CMOS Static RAM Module based on tour 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub­


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    ED18M8130C/P90/100/120/150 128Kx8 EDI8M8130C/P 1024K 32Kx8 EDI8MB130C/P90/100/120/150 A111 A210 DQ01-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MDÌ EDI8M8130C50/60/70/80 High Speed Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub­ strate.


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    EDI8M8130C50/60/70/80 128Kx8 EDI8M8130C 1024K 32Kx8 EDI8M8130C EDI8M8130CS0/60/70/80 PDF

    diode LT 42 PR 3002

    Abstract: A54 ZENER t60403-l4097 data sheet IC 7400 ECR3 qsc 1110 diode LT 47 PR 3002 PTC800 sft 43 A52 Optocoupler
    Text: Data Sheet January 1995 ; m A T& T Microelectronics T7256 Single-Chip NT1 SCNT1 Transceiver Features • U- to S/T-interface conversion for ISDN basic rate (2B+D) systems — Integrated U- and S/T-interfaces — Operates in stand-alone mode to provide Uand S/T-interface activation, control, and


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    T7256 and0-566-9568 800-521-CORE F-06561 005002b diode LT 42 PR 3002 A54 ZENER t60403-l4097 data sheet IC 7400 ECR3 qsc 1110 diode LT 47 PR 3002 PTC800 sft 43 A52 Optocoupler PDF

    A111C

    Abstract: A210E a124 es A210 E3030
    Text: EDI8M8130C/P90/100/120/150 m o i High Performance Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C/P is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub­


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    EDI8M8130C/P90/100/120/150 128Kx8 EDI8M8130C/P 1024K 32Kx8 EDI8M81300P90/100/120/150 EDI8M8130C/P90/100/120/150 A111C A210E a124 es A210 E3030 PDF

    i354

    Abstract: 2N7222 IRFM440 IRFM440D i-354
    Text: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International


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    IRFM440 MIL-S-1S500/596] IRFM440D IRFM440U O-254 MIL-S-19B00 14A551455 i354 2N7222 IRFM440 i-354 PDF

    26LS32

    Abstract: 26LS32 pin diagram ci 26ls32 1241MF 41mr 41MF ci 1041 1041 1041MF 1041MT
    Text: AT&T Data Sheet June 1994 *- # IIW Microelectronics 41 MF, 41 MR, and 41MT Quad Differential Line Receivers Features Description • Pin equivalent to the general-trade 26LS32 device, with improved speed and reduced power con­ sumption The 41 MF, 41 MR, and 41 MT Quad Differential Line


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    26LS32 1041MT-TR 1141MT 1141MT-TR 1241MT-TR 26LS32 pin diagram ci 26ls32 1241MF 41mr 41MF ci 1041 1041 1041MF 1041MT PDF

    A210C

    Abstract: A111 EDI8M8130C OQ215
    Text: ^EDI EDI8M8130C50/60/70/80 High Speed Megabit SRAM Module 128Kx8 Static RAM CMOS, Module Features The EDI8M8130C is a 1024K bit CMOS Static RAM Module based on four 32Kx8 Static RAMs in leadless chip carriers mounted on a multi-layered ceramic sub­ strate.


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    EDI8M8130C50/60/70/80 128Kx8 EDI8M8130C 1024K 32Kx8 b0/60/70/80 EDI8M8130C50/60/70/80 A210C A111 OQ215 PDF

    hcpl7800

    Abstract: No abstract text available
    Text: ¥ h n \ HEWLETT WLEM PACKARD H igh CMR Iso la tio n A m p lifier Technical Data HCPL-7800 HCPL-7800A HCPL-7800B F ea tu re s • 15 k V /us C om m on-M ode R ejectio n a t VCM = 1000 V* • C om pact, A u to-In sertab le S ta n d a rd 8-pin D IP P a ck a g e


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    HCPL-7800 HCPL-7800A HCPL-7800B DD114b5 4447SA4 5091-5714E 5962-9979E hcpl7800 PDF