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    BUT13 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUT13 Motorola European Master Selection Guide 1986 Scan PDF
    BUT13 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BUT13 Motorola Switchmode Datasheet Scan PDF
    BUT13 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUT13 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT13 STMicroelectronics High Voltage Power Switch - Pol=NPN / Pkg=TO3 / Vceo=600 / Ic=28 / Hfe=30min / fT(Hz)=- / Pwr(W)=175 Scan PDF
    BUT131 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131 Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    BUT131 Philips Semiconductors V(cesm): 850V, 80W, silicon diffused power transistor Scan PDF
    BUT131A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131A Philips Semiconductors V(cesm): 1000V, 80W, silicon diffused power transistor Scan PDF
    BUT131H Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUT131H Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUT131H Philips Semiconductors High Speed High Voltage Darlingtons / Transistors Scan PDF
    BUT131H Philips Semiconductors V(cesm): 850V, 80W, silicon diffused power transistor Scan PDF
    BUT134 AnalogicTech POWER TRANSISTORS Scan PDF
    BUT134 USHA (BUTxxx) Power Transistors Scan PDF
    BUT135 AnalogicTech POWER TRANSISTORS Scan PDF

    BUT13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUT131H

    Abstract: BUT13
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.


    Original     		PDF BUT131H BUT131H BUT13

    vbe 10v, vce 500v NPN Transistor

    Abstract: npn high voltage transistor 500v 8a vce 500v NPN Transistor BUT131 BUT131A BUT13
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUT131/A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min)- BUT131 500V(Min)- BUT131A ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching


    Original     		PDF BUT131/A BUT131 BUT131A vbe 10v, vce 500v NPN Transistor npn high voltage transistor 500v 8a vce 500v NPN Transistor BUT131 BUT131A BUT13

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    BUT13

    Abstract: BUT13P I3315 5607 transistor BUT13PFI BUT13P equivalent lb 385 IC circuit diagram
    Text: / = T ^ 7# S G S -T H O M S O N M ^ gm [EC T[H «n(gS S G B U T 1 3 / 1 3 P /1 3 P F I S - T HO MS ON 3QE D HIGH VOLTAGE POWER SWITCH • HIGH POWER ■ INTEGRATED SPEED-UP DIODE IN TER N A L S C H EM A TIC DIAG RAM DESC RIPTIO N The BUT13 , BUT13P and BUT13PFI are silicon


    OCR Scan     		PDF BUT13/13P/13PFI BUT13 BUT13P BUT13PFI O-218 ISO-WATT218 ISOWATT218 500ms BUT13 I3315 5607 transistor BUT13P equivalent lb 385 IC circuit diagram

    NFE 02 352

    Abstract: 131H BUT131 BUT131A BUT131H L100 82S2 BUT13 BUT31
    Text: [ [ bbS3T31 DEVELOPMENT DATA O G lflflb ? X T h is data sheet contains advance Inform ation and specifications ara subject to change w ith o u t notice. □ • BUT131 SERIES T - 3 3 - / â N AMER PHILIPS/DISCRETE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use


    OCR Scan     		PDF BUT131 O-220 BUT131 NFE 02 352 131H BUT131A BUT131H L100 82S2 BUT13 BUT31

    BUS11A

    Abstract: BUV11 BUT91
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS


    OCR Scan     		PDF BUR51 BUR51S BUR52 BUR52S BUS11 BUS11A BUS12A BUS13A BUV11 BUT91

    Untitled

    Abstract: No abstract text available
    Text: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS


    OCR Scan     		PDF BUT131 aTO-220 BUT131 T-33-13

    BUT13P

    Abstract: BLN20 BUT14 SOT93 BUV62 BUS50 BUS13A BUV24 BUV41 but72
    Text: *4ö E ì> Ö1331Ö7 GG004S4 044 •SML B SEMELABE REL & HIGH ENERGY BI-POLAR TRANSISTORS Type Number BUS13 BUS13A BIJS14 BUSINA BUS50 BUS51 BUS52 BUT11 ia BUT13 BUT13P BUT14 BUT34 BIJT35 BUT70 IMJT72 BUT90 BOT91 BUT92 BUT92A KIVION BiJVll BUV18 BUV19 BIJV20


    OCR Scan     		PDF GG004S4 BUS13 15min BUS13A BUS14A BUS50 20min BUS51 BUT13P BLN20 BUT14 SOT93 BUV62 BUV24 BUV41 but72

    BUT13P

    Abstract: BUT13 BUT 13P BUT13P equivalent
    Text: SGS-THOMSON B U T 1 3 / 1 3 P /1 3 P FI MËE*L BBra MO(SS HIGH VOLTAGE POWER SWITCH HIGH POWER INTEGRATED SPEED-UP DIODE .J, TO-218 TO-3 ISOWATT218 IN T E R N A L SCH EM ATIC DIAG RAM DESCRIPTION The BUT13 , BUT13P and BUT13PFI are silicon multiepitaxial planar NPN transistors in monolithic


    OCR Scan     		PDF O-218 ISOWATT218 BUT13 BUT13P BUT13PFI ISOWATT218 500ms BUT13 BUT 13P BUT13P equivalent

    NFE 02 352

    Abstract: UT131 131H BUT131 BUT131A BUT131H BUT13
    Text: [ bbS3T31 DEVELOPMENT DATA Jl OGlBflb? □ • BUT131 SERIES This data sheet contains advance Information and specifications are subject to change without notice. T - 3 S - / â N AUER PHILIP S /D IS C R E TE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-spaed, glass-passivated npn power transistors in aT O -220 envelope intended for use


    OCR Scan     		PDF BUT131 O-22C) bb53131 T-33-13 NFE 02 352 UT131 131H BUT131A BUT131H BUT13

    Untitled

    Abstract: No abstract text available
    Text: _ • r r 7 S ^ 7# T G q S g q - T a a ? H a O p g M a S b O B i b ■ _ N B U T 1 3 / 1 3 P /1 3 P F I [« ^ o m tE C T lH M n o S S G S-THOMSON 3QE D HIGH VOLTAGE POWER SWITCH ■ HIGH POWER ■ INTEGRATED SPEED-UP DIODE


    OCR Scan     		PDF BUT13 BUT13P BUT13PFI O-218 ISOWATT218 500ms

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan     		PDF MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    BUT18AF

    Abstract: but18a MBB077 BUT13 BUT18
    Text: Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUT18F; BUT18AF PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. PIN base 2 collector


    OCR Scan     		PDF OT186 BUT18F; BUT18AF MBB077 BUT18AF. OT186) BUT13F BUT18AF BUT18F but18a MBB077 BUT13 BUT18

    CCC-13

    Abstract: BUT13
    Text: 6115950 M IC ROSEMI 02E C OR P/ PO WER 05 00510 ]>e | bllS^SO 0DD0S10 5 CCC13 P ÏC T TECHNOLOGY 28 A, 600 V, NPN Darlington Power Transistor Chip • Triple Diffused, Glass Passivated ■ Contact Metallization: Base and emitter-aluminum Collector Al-Ti-Ni-Au


    OCR Scan     		PDF 0DD0S10 CCC13 emitter-15-mil thickness-12 BUT13 CCC-13 BUT13

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan     		PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    mpsu57 cross

    Abstract: No abstract text available
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s tf ps ps Max Max MHz Min Pd (Case) Watts @ 25°C h ^FE Min/Max @ lc Amp MPSU60


    OCR Scan     		PDF MPSU10 MPSU02 MPSU60 MPSU52 MPSU03 MPSU04 MPSU01 MPSU51 MPSU01A MPSU51A mpsu57 cross

    mje520

    Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
    Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen­ hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50


    OCR Scan     		PDF BD433 MJE200 MJE520 BD435 2N4921 2IM5190 2IM6037 MJE521 MJE180 BD135 SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    20N15

    Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
    Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.


    OCR Scan     		PDF

    diode 400V 4A

    Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV
    Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE *C(DC)(tJ SOT-93 V CE(*at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A


    OCR Scan     		PDF BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55