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    2N5883 Price and Stock

    Rochester Electronics LLC 2N5883G

    TRANS PNP 60V 25A TO204
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    DigiKey 2N5883G Bulk 1,031 65
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    Microchip Technology Inc 2N5883

    PNP POWER TRANSISTOR SILICON AMP
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    DigiKey 2N5883 Bulk 100
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    Avnet Americas 2N5883 Bulk 36 Weeks 100
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    Mouser Electronics 2N5883
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    Microchip Technology Inc 2N5883 1
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    Onlinecomponents.com 2N5883
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    NAC 2N5883 Tray 7
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    Master Electronics 2N5883
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    onsemi 2N5883G

    TRANS PNP 60V 25A TO204
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    DigiKey 2N5883G Tray
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    Rochester Electronics 2N5883G 1,031 1
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    Central Semiconductor Corp 2N5883 PBFREE

    Transistor GP BJT PNP 60V 25A 2-Pin TO-3 Sleeve (Alt: 2N5883 PBFREE)
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    Avnet Americas 2N5883 PBFREE 180
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    Motorola Semiconductor Products 2N5883

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    Bristol Electronics 2N5883 4
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    Quest Components 2N5883 3
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    2N5883 3
    • 1 $5.082
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    2N5883 1
    • 1 $5.4
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    2N5883 4
    • 1 $5.88
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    2N5883 68
    • 1 $6
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    2N5883 113
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    Find more 2N5883 price and stock on Findchips.com

    2N5883 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5883 Motorola 25A PNP SILICON POWER TRANSISTOR Original PDF
    2N5883 On Semiconductor Complementary Silicon High-Power Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5883 On Semiconductor Bipolar Power TO3 PNP 25A 60V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 Original PDF
    2N5883 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5883 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5883 API Electronics 25 Amp Transistors Scan PDF
    2N5883 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5883 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    2N5883 Diode Transistor Transistor Short Form Data Scan PDF
    2N5883 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5883 General Transistor Power Transistor Selection Guide Scan PDF
    2N5883 Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5883 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5883 Motorola The European Selection Data Book 1976 Scan PDF
    2N5883 Motorola European Master Selection Guide 1986 Scan PDF
    2N5883 Motorola 25A Si Power Transistor Scan PDF
    2N5883 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5883 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan PDF
    2N5883 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5883 Unknown Shortform Transistor Datasheet Guide Scan PDF

    2N5883 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6058

    Abstract: 2N6059
    Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


    Original     		PDF 2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059

    2N5884

    Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA 2N5883/D 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885

    TIP360

    Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436


    Original     		PDF 2N5683 2N5684 2N6377 2N6380 2N6061 2N6063 2N6378 2N6381 2N6379 2N6382 TIP360 b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904

    Untitled

    Abstract: No abstract text available
    Text: 2N5883 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)25


    Original     		PDF 2N5883 time700n

    2n5885

    Abstract: 2N5886 Vce (sat)40V
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION •DC Current Gain: hFE= 20 Min @IC= 10A ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 15A ·Complement to Type 2N5883/5884 APPLICATIONS ·Designed for general purpose power amplifier and switching


    Original     		PDF 2N5885/5886 2N5883/5884 2N5885 2N5886 2n5885 2N5886 Vce (sat)40V

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    2N6058

    Abstract: 2N6059 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear


    Original     		PDF 2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884

    2N5886G

    Abstract: 2N5886 2N5885G IB 115 2N5883 2N5884 2N5883G 2N5884G 2N5885 2N5984
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA O-204AA 2N5886G 2N5885G IB 115 2N5883 2N5883G 2N5884G 2N5885 2N5984

    Untitled

    Abstract: No abstract text available
    Text: 2N5883 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5883 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N5883 MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . PNP SILICON TRANSISTOR 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . FEATURES 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )


    Original     		PDF 2N5883

    2SA1046

    Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5984

    Abstract: 2N5886 2N5883 2N5884 2N5885
    Text: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. http://onsemi.com • Low Collector–Emitter Saturation Voltage – 25 AMPERE COMPLEMENTARY


    Original     		PDF 2N5883, 2N5884* 2N5885, 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: Product Specification www.jmnic.com 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5883 2N5884 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247


    OCR Scan     		PDF 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A

    2N5883

    Abstract: 2N5884 LE20A 501C Solidev Semiconductors Solidev LC10A
    Text: So lid e v Sem iconductors Silicon Power Transistors P H Y S IC A L D IM E N S IO N S Silicon PNP Power Transistors—20 Amp REFERENCE T A B L E C ode Stock No. 2N5883 2N5884 35071C 35072A A B S O L U T E M A X IM U M R A T IN G S 2N5883 2N5884 B V cBo V


    OCR Scan     		PDF 2N5883 2N5884 35071C 5072A 2N5884 Vce-80V Vce-40V LE20A 501C Solidev Semiconductors Solidev LC10A

    2N5886

    Abstract: 2N5883 2N5884 2N5885 S200 40 amp collector current CWB-10
    Text: 2N5883, 2N5884 PNP I 2N5885, 2N5886 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5883, 2N5885 2N5884, 2N5886


    OCR Scan     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5885 2N5884, 2N5886 2N5885 2N5883 S200 40 amp collector current CWB-10

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan     		PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    2N5886 MOTOROLA

    Abstract: 2N5885 MOTOROLA 2N5984 2N5883 2N5883 MOTOROLA 2N5884 2N5885 2N5886 transistor 2N5884
    Text: MOTOROLA Order this document by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N 5883 C om plem entary Silicon H igh-P ow er Transistors 2N 5884* NPN . . . designed for general-purpose power amplifier and switching applications. • • • • 2N 5885 Low Collector-Emitter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5885 2N5884 2N5886 2N5883/D 2N5886 MOTOROLA 2N5885 MOTOROLA 2N5984 2N5883 MOTOROLA transistor 2N5884

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N5886

    Abstract: 2n5884 2N5883
    Text: MOTOROLA O rder this docum ent by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low C ollector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* O-204AA 2N5886 2n5884

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan     		PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    2N5883

    Abstract: 2N 5883 2N588
    Text: T Y P E S 2N5883. 2N588 4 P- N - P S I N G L E - D I F F U S E D S I L I C O N P O W E R T R A N S I S T O R S c < FOR PO W ER -A M PLIFIER A N D HIG H-SPEED-SW ITCHING APPLICATIO N S D ESIG N ED FOR C O M P L E M E N T A R Y USE W ITH 2N 5885, 2N 5886 •


    OCR Scan     		PDF 2N5883. 2N588 90-mJ 2N5883 2N 5883