BUT131H Search Results

BUT131H Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUT131H		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
BUT131H		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF
BUT131H		Philips Semiconductors	High Speed High Voltage Darlingtons / Transistors		Scan	PDF
BUT131H		Philips Semiconductors	V(cesm): 850V, 80W, silicon diffused power transistor		Scan	PDF

BUT131H Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BUT131H Abstract: BUT13 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT131H DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc.	Original	BUT131H BUT131H BUT13	PDF
NFE 02 352 Abstract: 131H BUT131 BUT131A BUT131H L100 82S2 BUT13 BUT31 Text: [ [ bbS3T31 DEVELOPMENT DATA O G lflflb ? X T h is data sheet contains advance Inform ation and specifications ara subject to change w ith o u t notice. □ • BUT131 SERIES T - 3 3 - / â N AMER PHILIPS/DISCRETE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended for use	OCR Scan	BUT131 O-220 BUT131 NFE 02 352 131H BUT131A BUT131H L100 82S2 BUT13 BUT31	PDF
diode 400V 4A Abstract: DIODE 3A 1000V BUT21A 1000v 3a diode ESM3045AV BUX86 Diode 400V 5A ESM5045DV diode 400V 6A ESM3045DV Text: N AMER PH ILIPS/ DIS CRETE 42 SSE D • ^53131 001^220 b ■ T~32-0l Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating TYPE NO. BU826 BU826A PACKAGE OUTLINE C(DC)(tJ SOT-93 V CE(at) MAX. a t lc tf MAX a t lc 375V 400V 2V at 2.5A	OCR Scan	BU826 BU826A OT-93 BUV90 BUV90F OT-199 ESM3045AV ESM3045DV OT-227B2 diode 400V 4A DIODE 3A 1000V BUT21A 1000v 3a diode BUX86 Diode 400V 5A ESM5045DV diode 400V 6A	PDF
Untitled Abstract: No abstract text available Text: [ t ^^53= 131 DEVELOPMENT DATA Q D lflflh ? This data sheat contains advance Information and specifications are subject to change w ithout notice. _ Q A BUT131 SERIES T - 33-/3 N AUER PHILIPS/DISCRETE 5SE I> SILICON DIFFUSED POWER TRANSISTORS	OCR Scan	BUT131 aTO-220 BUT131 T-33-13	PDF
ESM40 Abstract: BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v Text: N AMER PHILIPS/DISCRETE 55E D • bt353tm Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE OUTLINE C(DC)W SOT-93 BUV90 SOT-93 BUV90F SOT-199 ESM3045AV ËSM3045DV VCE(at) MAX. a t lc ff MAX a t lc	OCR Scan	bk53i31 QCUb220 T-32-OI BU826 OT-93 BU826A BUV90 BUV90F OT-199 ESM40 BUT21A bux86 philips semiconductor ESM6045DV 10a 1000v to220a DIODE 3A 1000V ESM4045DV 1000v 3a diode SOT93 diode 6A 1000v	PDF
BUS11A PHILIPS SEMICONDUCTOR Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV	OCR Scan	Q01b22Q 32-0t OT-93 BUV90 BUV90F OT-199 ESM3045AV 3045DV ESM4045AV BUS11A PHILIPS SEMICONDUCTOR	PDF
TXD10K40 Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40	OCR Scan	bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G	PDF
NFE 02 352 Abstract: UT131 131H BUT131 BUT131A BUT131H BUT13 Text: [ bbS3T31 DEVELOPMENT DATA Jl OGlBflb? □ • BUT131 SERIES This data sheet contains advance Information and specifications are subject to change without notice. T - 3 S - / â N AUER PHILIP S /D IS C R E TE 5SE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-spaed, glass-passivated npn power transistors in aT O -220 envelope intended for use	OCR Scan	BUT131 O-22C) bb53131 T-33-13 NFE 02 352 UT131 131H BUT131A BUT131H BUT13	PDF